JP4995565B2 - 複合材料の製造方法 - Google Patents
複合材料の製造方法 Download PDFInfo
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- JP4995565B2 JP4995565B2 JP2006503937A JP2006503937A JP4995565B2 JP 4995565 B2 JP4995565 B2 JP 4995565B2 JP 2006503937 A JP2006503937 A JP 2006503937A JP 2006503937 A JP2006503937 A JP 2006503937A JP 4995565 B2 JP4995565 B2 JP 4995565B2
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- Prior art keywords
- eutectic
- alloy
- penetration
- diamond
- temperature
- Prior art date
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- 239000002131 composite material Substances 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000010432 diamond Substances 0.000 claims description 65
- 229910003460 diamond Inorganic materials 0.000 claims description 63
- 229910045601 alloy Inorganic materials 0.000 claims description 36
- 239000000956 alloy Substances 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 230000005496 eutectics Effects 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 230000035515 penetration Effects 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 12
- 239000011230 binding agent Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 8
- 150000002910 rare earth metals Chemical class 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052706 scandium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 2
- 239000013067 intermediate product Substances 0.000 claims 3
- 238000007731 hot pressing Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 22
- 239000012071 phase Substances 0.000 description 14
- 238000001764 infiltration Methods 0.000 description 12
- 230000008595 infiltration Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 239000011651 chromium Substances 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000006023 eutectic alloy Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001325 element alloy Inorganic materials 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- -1 silver Chemical class 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005088 metallography Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000009715 pressure infiltration Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000009716 squeeze casting Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
平均粒径80〜150μmの等級IIA(エレメントSiX GmbH社のMicron+SND)の天然ダイヤモンド粉末を、寸法35×35×5mm3の黒鉛製金型にプレート状に充填した。そのかさ密度を機械振動で60体積%にした。次の工程で、ダイヤモンド粉末をAg・Si共晶合金から成る箔で覆った。Si含有量は11原子%であり、浸透のために炉内の真空中で860℃の温度に加熱し、その保持時間を15分とした。続くヘリウムを利用したガス圧力浸透を、105Paの圧力で15分間にわたって行った。400℃で約10分にわたり保持した後で室温に冷却した時点で、存在する相の体積含有量を、定量金属組織学的に検出した。その際、炭化珪素の値は約1体積%であり、その炭化珪素はダイヤモンド粒子を大部分にわたり一様に取り囲んでいた。この炭化珪素被覆の小さな層厚のため、炭化珪素相の変態は検出されなかった。その組織は、ダイヤモンドおよび炭化珪素の他に、共晶組成で生成したSi析出物が埋設されたAg豊富相から成る。Ag豊富相の体積比は約12%、Siの含有量は約1体積%であった。EDXによりAg豊富相にAg以外の成分は検出されず、従って、所定の検出限界に基づき、Ag含有量は99原子%であると推定した。熱伝導率と熱膨張率を検出すべく、プレートをレーザおよびエロージョンで加工した。室温における熱伝導率に関し、500W/mKの平均値が測定された。熱膨張率は、8.5×10-6K-1の平均値を得た。
別の実験で、平均粒径40〜80μmのエレメントSiX GmbH社の等級Micron+MDAの人工ダイヤモンド粉末を加工した。加工は、実施例1に記載と同様に行った。製造した複合材料の室温での平均熱伝導率は410W/mK、平均熱膨張率は9.0×10-6K-1であった。
更に別の実験で、平均粒径40〜80μmのエレメントSiX GmbH社の等級Micron+MDAの人工ダイヤモンドを加工した。加工は実施例1と同様に行った。Ag・Si共晶溶融物によるダイヤモンドばら積み材の浸透は、熱間加工鋼から成る鋳型を150℃に加熱する通常の圧搾鋳造装置で、約40MPaのガス圧力下で実施した。Ag・Si溶融物の温度は約880℃であった。続く室温迄のゆっくりした冷却は、400℃で約15分間にわたり保持した後で実施した。そのように製造した複合材料の室温における平均熱伝導率は480W/mKであった。
平均粒径40〜80μmのエレメントSiX GmbH社の等級Micron+MDAの人工ダイヤモンドを実施例3に基づいて加工したが、浸透温度からの冷却時に約400℃での15分間にわたる保持過程は実施しなかった。そのように製造した複合材料の室温での平均熱伝導率は440W/mK、平均熱膨張率は8.5×10-6K-1であった。
平均粒径40〜80μmの等級IIA(エレメントSiX GmbH社のMicron+SND)の天然ダイヤモンドを、7体積%のエポキシ樹脂基結合剤と混合した。かく製造した前駆物質又は中間物を、金型プレスで200MPaの圧力で寸法35×35×5mm3のプレート状に圧縮した。プレートの有孔率は約15体積%であった。次の工程で、プレートをCu・Y共晶合金から成る箔で覆った。Y含有量は9.3原子%であり、浸透のために炉内の真空中で900℃の温度に加熱し、その保持時間は15分であった。熱伝導率と熱膨張率を検出すべく、プレートをレーザおよびエロージョンで加工した。室温における熱伝導率として、410W/mKの平均値を得た。熱膨張率の検出では7.7×10-6K-1の平均値を得た。
Claims (2)
- ヒートシンク用のダイヤモンド含有複合材料の製造方法において、
平均粒径5〜300μmのダイヤモンド粒子を含む中間物又は前記ダイヤモンド粒子と結合剤とを含む中間物を、加圧せずに又は加圧下に成形し、その際、成形工程後における前記中間物の総体積に対する前記ダイヤモンド粒子含有量を40〜90%とし(ここで、残部は、気孔又は気孔と結合剤とからなる。)、
(1)前記中間物と、(2)Cu、Ag、Auの群からの元素又はこれらの合金から成る高熱伝導率の金属成分と、Si、Y、Sc、希土類金属の群からの少なくとも1つの元素と、Ni、Cr、Ti、V、Mo、W、Nb、Ta、Co、Feの群からの1つ又は複数の付随的な元素の3原子%未満と、から成り、900℃より低い共晶温度を有する共晶組成の共晶浸透合金又は共晶組成の近傍の組成を有する近共晶浸透合金(この近共晶浸透合金が液相線温度950℃未満の組成を有する。)とを、加圧せずに又は加圧下に、前記共晶浸透合金又は近共晶浸透合金の液相線温度より高いが1000℃より低い温度に加熱し、前記中間物を前記共晶浸透合金又は近共晶浸透合金で浸透して前記中間物の気孔を少なくとも97%充填する
工程を含むことを特徴とする方法。 - ヒートシンク用のダイヤモンド含有複合材料の製造方法において、
(1)平均粒径5〜300μmのダイヤモンド粒子40〜90体積%と、(2)Cu、Ag、Auの群からの元素又はこれらの合金から成る高熱伝導率の金属成分、Si、Y、Sc、希土類金属の群からの少なくとも1つの元素及びNi、Cr、Ti、V、Mo、W、Nb、Ta、Co、Feの群からの1つ又は複数の付随的な濡れ促進元素の3原子%未満とから成り、900℃より低い共晶温度を有する共晶組成の共晶浸透合金又は共晶組成の近傍の組成を有する近共晶浸透合金(この近共晶浸透合金は、液相線温度が950℃より低い組成を有する。)10〜60体積%と、から成る中間物を、混合又は粉砕し、
高温プレスの金型に前記中間物を充填し、500℃<T<1000℃であって、前記共晶浸透合金又は近共晶浸透合金の共晶温度より高い温度Tに加熱し、前記中間物を高温プレスする
工程を含むことを特徴とする方法。
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AT0016403U AT7382U1 (de) | 2003-03-11 | 2003-03-11 | Wärmesenke mit hoher wärmeleitfähigkeit |
PCT/AT2004/000017 WO2004080913A1 (de) | 2003-03-11 | 2004-01-20 | Verfahren zur herstellung eines verbundwerkstoffes |
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US8575051B2 (en) | 2013-11-05 |
EP1601631A1 (de) | 2005-12-07 |
AT7382U1 (de) | 2005-02-25 |
CN100400467C (zh) | 2008-07-09 |
JP4880447B2 (ja) | 2012-02-22 |
JP2006519928A (ja) | 2006-08-31 |
WO2004080914A1 (de) | 2004-09-23 |
US20060157884A1 (en) | 2006-07-20 |
EP1601630B1 (de) | 2017-12-27 |
US20060130998A1 (en) | 2006-06-22 |
CN1759078A (zh) | 2006-04-12 |
WO2004080913A1 (de) | 2004-09-23 |
JP2006524173A (ja) | 2006-10-26 |
EP1601630A1 (de) | 2005-12-07 |
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