JP4969625B2 - 光情報記録媒体 - Google Patents
光情報記録媒体 Download PDFInfo
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- JP4969625B2 JP4969625B2 JP2009217292A JP2009217292A JP4969625B2 JP 4969625 B2 JP4969625 B2 JP 4969625B2 JP 2009217292 A JP2009217292 A JP 2009217292A JP 2009217292 A JP2009217292 A JP 2009217292A JP 4969625 B2 JP4969625 B2 JP 4969625B2
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- 230000003287 optical effect Effects 0.000 title claims description 71
- 239000010410 layer Substances 0.000 claims description 169
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 4
- 229910021078 Pd—O Inorganic materials 0.000 claims 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims 4
- 230000001681 protective effect Effects 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 238000000034 method Methods 0.000 description 19
- 238000005477 sputtering target Methods 0.000 description 17
- 230000035945 sensitivity Effects 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002186 photoelectron spectrum Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004713 Cyclic olefin copolymer Substances 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by features of form at particular places, e.g. in edge regions
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B2007/24302—Metals or metalloids
- G11B2007/24304—Metals or metalloids group 2 or 12 elements (e.g. Be, Ca, Mg, Zn, Cd)
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- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Description
(A)酸化In(具体的には、例えば酸化Inを50mol%以上含む)とPd(例えば酸化Pdおよび/または金属Pd)を含み、かつ、スパッタリングターゲットに含まれるIn原子とPd原子の合計に対するPd原子の比率が6〜60原子%である点に特徴を有するスパッタリングターゲットや、
(B)In原子とPd原子の合計に対するPd原子の比率で6〜60原子%のPd(例えば金属Pd)を含むIn基合金からなる点に特徴を有するスパッタリングターゲットを用いることが挙げられる。また、
(C)金属Inターゲット(純In金属ターゲット)と金属Pdターゲット(純Pd金属ターゲット)を用い、これらを同時放電させて多元スパッタリングを行うことが挙げられる。
(1)光ディスクの作製
ディスク基板として、ポリカーボネート基板(厚さ:1.1mm、直径:120mm、トラックピッチ:0.32μm、溝深さ:25nm)を用い、該基板上に、DCマグネトロンスパッタリング法により、表1に示す通り種々のPd量の記録層を形成した。記録層の膜厚は40nmとした。スパッタリングは、純In金属ターゲットと純Pd金属ターゲットを同時に放電して行った。
作製した光ディスクの(初期)反射率および記録特性について下記の通り評価した。
変調度(反射率の変化率)=(未記録部分の反射率−記録部分の反射率)/(未記録部分の反射率) …(1)
スパッタリングターゲットとして、純Pdにかえて純Cu、または純Agを用いて下記表2に示す成分組成の記録層を成膜した以外は、実験例1と同様にして、光ディスクを作製し評価した。その結果を表2に示す。
成膜時の成膜ガス流量を下記表3に示す通り変えた以外は、実験例1と同様にして、表3のNo.2の光ディスクを作製し評価した。その結果を表3に示す。尚、表3のNo.1は、表1のNo.5と同じである。
(1)光ディスクの作製
ディスク基板として、ポリカーボネート基板(厚さ:1.1mm、直径:120mm、トラックピッチ:0.32μm、溝深さ:25nm)を用い、該基板上に、DCマグネトロンスパッタリング法により、酸化Inと金属Pd、酸化Pd(一酸化Pdおよび二酸化Pdの合計に占める、一酸化Pd、二酸化Pdの各モル比は表4に示す通りである)の含有量が種々の記録層を形成した。記録層の膜厚は40nmとした。スパッタリングは、純In金属ターゲット、純Pd金属ターゲットの2つのターゲットの同時放電による多元スパッタリングを行った。上記記録層形成のためのスパッタリング条件は、Ar流量:10sccmで一定とし、このArと同時に導入する酸素流量を、表4に示す通り5〜50sccmの範囲内で変化させた。また、ガス圧:0.4Pa、DCスパッタリングパワー:100〜200W、基板温度:室温とした。
作製した光ディスクについて下記の通り評価した。即ち、光ディスク評価装置(パルステック工業社製「ODU−1000」)を用い、記録レーザー中心波長は405nmとし、NA(開口数):0.85のレンズを用いた。下記に示す反射率は、上記装置を用い、レーザーをトラック上に照射し、光ディスクにおける未記録部分のレーザー光の戻り光強度から求めた。
変調度(反射率の変化率)=(未記録部分の反射率−記録部分の反射率)/(未記録部分の反射率) …(1)
Claims (7)
- レーザー光の照射により記録が行われる記録層を備えた光情報記録媒体であって、前記記録層は、酸化Inと酸化Pdとを含み、該酸化Pdが一酸化Pdと二酸化Pdを含むものであり、かつ、記録層に含まれるIn原子とPd原子の合計に対するPd原子の比率が6〜60原子%であることを特徴とする光情報記録媒体。
[但し、記録層が下記組成1(モル比)のIn−Sn−Pd−O膜の単層である光情報記録媒体、および記録層が下記組成2(原子比)のZn−In−Sn−Pd−O記録膜であり、該記録膜の上下にIn2O3からなる保護膜が形成され、前記Zn−In−Sn−Pd−O記録膜の厚みは60nm、前記保護膜の厚みはそれぞれ5nmである情報記録層(70nm厚)を有する光情報記録媒体を除く。
(組成1)
In2O3:SnO2=9:1、
(In2O3+SnO2):Pd=8:2
(組成2)
Zn:In+Sn=5:5
In:Sn=9:1
Zn+In+Sn:Pd=8:2] - レーザー光の照射により記録が行われる記録層を備えた光情報記録媒体であって、前記記録層は、酸化Inと酸化Pdとを含み、該酸化Pdが一酸化Pdと二酸化Pdを含むものであり、かつ、記録層に含まれるIn原子とPd原子の合計に対するPd原子の比率が16.1〜60原子%であることを特徴とする光情報記録媒体。
[但し、記録層が下記組成2(原子比)のZn−In−Sn−Pd−O記録膜であり、該記録膜の上下にIn2O3からなる保護膜が形成され、前記Zn−In−Sn−Pd−O記録膜の厚みは60nm、前記保護膜の厚みはそれぞれ5nmである情報記録層(70nm厚)を有する光情報記録媒体を除く。
(組成2)
Zn:In+Sn=5:5
In:Sn=9:1
Zn+In+Sn:Pd=8:2] - レーザー光の照射により記録が行われる記録層を備えた光情報記録媒体であって、前記記録層は、酸化Inと酸化Pdとを含み、該酸化Pdが一酸化Pdと二酸化Pdを含むものであり、かつ、記録層に含まれるIn原子とPd原子の合計に対するPd原子の比率が6〜60原子%であり、かつ酸化Inは50mol%以上であることを特徴とする光情報記録媒体。
[但し、記録層が下記組成1(モル比)のIn−Sn−Pd−O膜の単層である光情報記録媒体を除く。
(組成1)
In2O3:SnO2=9:1、
(In2O3+SnO2):Pd=8:2] - レーザー光の照射により記録が行われる記録層を備えた光情報記録媒体であって、前記記録層は、酸化Inと酸化Pdとを含み、該酸化Pdが一酸化Pdと二酸化Pdを含むものであり、かつ、記録層に含まれるIn原子とPd原子の合計に対するPd原子の比率が16.1〜60原子%であり、かつ酸化Inは50mol%以上であることを特徴とする光情報記録媒体。
- 前記記録層に含まれる一酸化Pdと二酸化Pdの合計に対する二酸化Pdの比率が、5〜70モル%である請求項1〜4のいずれかに記載の光情報記録媒体。
- 前記記録層の膜厚が5〜100nmである請求項1〜5のいずれかに記載の光情報記録媒体。
- 前記記録層におけるレーザー光の照射された部分に気泡が生成し、体積変化することにより記録が行われる請求項1〜6のいずれかに記載の光情報記録媒体。
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JP5346915B2 (ja) * | 2010-12-28 | 2013-11-20 | 株式会社神戸製鋼所 | 光情報記録媒体用記録層、及び光情報記録媒体 |
JP5760464B2 (ja) | 2011-02-03 | 2015-08-12 | ソニー株式会社 | 光情報記録媒体 |
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JP6431940B2 (ja) | 2017-02-22 | 2018-11-28 | 株式会社神戸製鋼所 | 誘電体層、光記録媒体、スパッタリングターゲット及び酸化物 |
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