JP4963871B2 - 気液分離装置 - Google Patents
気液分離装置 Download PDFInfo
- Publication number
- JP4963871B2 JP4963871B2 JP2006139367A JP2006139367A JP4963871B2 JP 4963871 B2 JP4963871 B2 JP 4963871B2 JP 2006139367 A JP2006139367 A JP 2006139367A JP 2006139367 A JP2006139367 A JP 2006139367A JP 4963871 B2 JP4963871 B2 JP 4963871B2
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- JP
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- Prior art keywords
- gas
- liquid
- main body
- liquid separator
- fuel cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000007788 liquid Substances 0.000 title claims description 82
- 239000000446 fuel Substances 0.000 claims description 56
- 238000000605 extraction Methods 0.000 claims description 18
- 239000012528 membrane Substances 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 16
- -1 polytetrafluoroethylene Polymers 0.000 claims description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 8
- 230000005484 gravity Effects 0.000 claims description 5
- 230000003014 reinforcing effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 42
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 24
- 239000007789 gas Substances 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 239000001569 carbon dioxide Substances 0.000 description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 description 12
- 239000003054 catalyst Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000006722 reduction reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000002828 fuel tank Substances 0.000 description 3
- 239000003014 ion exchange membrane Substances 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000003411 electrode reaction Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical group [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28238—Making the insulator with sacrificial oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Fuel Cell (AREA)
- Degasification And Air Bubble Elimination (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Weting (AREA)
Description
CH3OH+H2O→CO2+6H++6e−(アノード反応)
(反応式2)
3/2O2+6H++6e−→3H2O(カソード反応)
(反応式3)
CH3OH+3/2O2→2H2O+CO2(総括反応)
まず、本発明の第1の実施形態にかかる気液分離装置について説明する。図3は、本実施形態に係る気液分離装置が適用される直接液体燃料電池システムの概略的な構成を示す説明図である。
2 アノード電極
3 カソード電極
10、100 気液分離装置
11 引き込み口
12 ホール
13 排出口
21、31 触媒層
22、32 燃料拡散層
23、33 電極支持体
110 本体
112、212 開孔部
120、220 気体抽出膜
130 引き込み口
140 排出口
150 フレキシブルチューブ
160 ウェート
170 サポータ
190 燃料電池スタック
191、192 ウォータポンプ
193 ブロー
195 燃料タンク
210 容器
Claims (5)
- 直接液体燃料電池からの液体と気体とを受け入れ、前記液体と気体とを分離して排出する気液分離装置において:
中空の球形の本体と;
前記本体に形成された複数の開孔部に設置され、前記本体内の前記気体を選択的に透過させる気体抽出膜と;
前記本体に連結され、前記液体と気体とを前記本体の内部に導入する引き込み口と;
前記本体に連結され、内部の液体を外部に排出する排出口と;
前記排出口に一端が連結され、他端が比重1以上のウェートを備えて前記液体に接触され、中空構造であるフレキシブルチューブと;
を備え、
前記複数の開孔部は、前記本体の設置方向に関係なく前記複数の開孔部のうちの少なくとも1つが前記本体内の前記液体から離隔して前記本体内の前記気体に接触するように、前記本体の外周の球面と内接する仮想正多面体の頂点に対応する位置に形成されることを特徴とする、気液分離装置。 - 前記仮想正多面体は、正四面体であることを特徴とする、請求項1に記載の気液分離装置。
- 前記気体抽出膜は、ポリテトラフルオロエチレンから製造されたことを特徴とする、請求項1又は2に記載の気液分離装置。
- 前記気体抽出膜は、前記ポリテトラフルオロエチレンと多孔性強化部材とが圧着されたことを特徴とする、請求項3に記載の気液分離装置。
- 前記フレキシブルチューブの長さは、前記本体の直径と同じ長さであることを特徴とする、請求項1〜4のいずれか1項に記載の気液分離装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0058880 | 2005-06-30 | ||
KR1020050058880A KR100724627B1 (ko) | 2005-06-30 | 2005-06-30 | 스텝게이트비대칭리세스 구조를 갖는 반도체소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007012597A JP2007012597A (ja) | 2007-01-18 |
JP4963871B2 true JP4963871B2 (ja) | 2012-06-27 |
Family
ID=37750777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006139367A Expired - Fee Related JP4963871B2 (ja) | 2005-06-30 | 2006-05-18 | 気液分離装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4963871B2 (ja) |
KR (1) | KR100724627B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109913880A (zh) * | 2017-12-13 | 2019-06-21 | 南京机器人研究院有限公司 | 一种焊接件表面保护方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009117132A (ja) * | 2007-11-05 | 2009-05-28 | Toyota Motor Corp | 気液分離装置、および、燃料電池システム |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06163523A (ja) * | 1992-11-20 | 1994-06-10 | Fujitsu Ltd | 半導体装置の製造方法 |
KR19980015597A (ko) * | 1996-08-23 | 1998-05-25 | 김주용 | 반도체 소자의 소자 분리막 형성방법 |
KR20000056248A (ko) * | 1999-02-18 | 2000-09-15 | 윤종용 | 소오스/드레인 영역의 수평방향 확산을 방지하는 전계효과 트랜지스터 및 그 제조방법 |
JP4250509B2 (ja) * | 2002-11-22 | 2009-04-08 | 株式会社東芝 | 燃料電池用混合タンク及び燃料電池システム |
JP2004206917A (ja) * | 2002-12-24 | 2004-07-22 | Kyoshin Kk | 燃料電池用気液分離タンク |
KR100568854B1 (ko) * | 2003-06-17 | 2006-04-10 | 삼성전자주식회사 | 반도체 메모리에서의 리세스 채널을 갖는 트랜지스터 형성방법 |
-
2005
- 2005-06-30 KR KR1020050058880A patent/KR100724627B1/ko not_active IP Right Cessation
-
2006
- 2006-05-18 JP JP2006139367A patent/JP4963871B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109913880A (zh) * | 2017-12-13 | 2019-06-21 | 南京机器人研究院有限公司 | 一种焊接件表面保护方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2007012597A (ja) | 2007-01-18 |
KR20070003134A (ko) | 2007-01-05 |
KR100724627B1 (ko) | 2007-06-04 |
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