JP4961617B2 - 配線基板とその製造方法及び半導体装置 - Google Patents

配線基板とその製造方法及び半導体装置 Download PDF

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Publication number
JP4961617B2
JP4961617B2 JP2007257504A JP2007257504A JP4961617B2 JP 4961617 B2 JP4961617 B2 JP 4961617B2 JP 2007257504 A JP2007257504 A JP 2007257504A JP 2007257504 A JP2007257504 A JP 2007257504A JP 4961617 B2 JP4961617 B2 JP 4961617B2
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Prior art keywords
semiconductor substrate
diffusion layer
impurity diffusion
conductivity type
wiring
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JP2007257504A
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English (en)
Japanese (ja)
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JP2009088336A (ja
JP2009088336A5 (https=
Inventor
啓 村山
伸二 中島
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2007257504A priority Critical patent/JP4961617B2/ja
Priority to US12/241,238 priority patent/US8026576B2/en
Priority to TW97137687A priority patent/TWI470755B/zh
Priority to EP08165654.8A priority patent/EP2045840B1/en
Publication of JP2009088336A publication Critical patent/JP2009088336A/ja
Publication of JP2009088336A5 publication Critical patent/JP2009088336A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/60—Arrangements for protection of devices protecting against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007257504A 2007-10-01 2007-10-01 配線基板とその製造方法及び半導体装置 Active JP4961617B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007257504A JP4961617B2 (ja) 2007-10-01 2007-10-01 配線基板とその製造方法及び半導体装置
US12/241,238 US8026576B2 (en) 2007-10-01 2008-09-30 Wiring board
TW97137687A TWI470755B (zh) 2007-10-01 2008-10-01 佈線板及其製造方法，及具有佈線板之半導體裝置
EP08165654.8A EP2045840B1 (en) 2007-10-01 2008-10-01 Wiring board with guard ring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007257504A JP4961617B2 (ja) 2007-10-01 2007-10-01 配線基板とその製造方法及び半導体装置

Publications (3)

Publication Number Publication Date
JP2009088336A JP2009088336A (ja) 2009-04-23
JP2009088336A5 JP2009088336A5 (https=) 2010-09-24
JP4961617B2 true JP4961617B2 (ja) 2012-06-27

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JP2007257504A Active JP4961617B2 (ja) 2007-10-01 2007-10-01 配線基板とその製造方法及び半導体装置

Country Status (4)

Country Link
US (1) US8026576B2 (https=)
EP (1) EP2045840B1 (https=)
JP (1) JP4961617B2 (https=)
TW (1) TWI470755B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343245B2 (ja) * 2008-05-15 2013-11-13 新光電気工業株式会社 シリコンインターポーザの製造方法
US7910473B2 (en) * 2008-12-31 2011-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with air gap
US8399354B2 (en) 2009-01-13 2013-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Through-silicon via with low-K dielectric liner
KR101127237B1 (ko) 2010-04-27 2012-03-29 주식회사 하이닉스반도체 반도체 집적회로
EP2602818A1 (en) * 2011-12-09 2013-06-12 Ipdia An interposer device
US20130154109A1 (en) * 2011-12-16 2013-06-20 Lsi Corporation Method of lowering capacitances of conductive apertures and an interposer capable of being reverse biased to achieve reduced capacitance
JP5684157B2 (ja) * 2012-01-04 2015-03-11 株式会社東芝 半導体装置
US9576881B2 (en) 2013-02-18 2017-02-21 Kabushiki Kaisha Toshiba Semiconductor device
JP5834030B2 (ja) 2013-02-18 2015-12-16 株式会社東芝 半導体装置
JP5982312B2 (ja) 2013-03-22 2016-08-31 株式会社東芝 半導体装置
US9613886B2 (en) * 2013-08-29 2017-04-04 Industrial Technology Research Institute Optical coupling module
JP2015072996A (ja) * 2013-10-02 2015-04-16 新光電気工業株式会社 半導体装置
JP2018044811A (ja) * 2016-09-13 2018-03-22 株式会社村田製作所 ピエゾ抵抗型センサ
WO2018182597A1 (en) 2017-03-29 2018-10-04 Intel Corporation Microelectronic device with embedded die substrate on interposer

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DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
JP2858383B2 (ja) 1991-10-14 1999-02-17 株式会社デンソー 半導体装置の製造方法
JPH07263452A (ja) 1994-03-25 1995-10-13 Sony Corp 半導体装置の製造方法
JPH08139302A (ja) * 1994-11-14 1996-05-31 Sharp Corp 光半導体ウェハおよび光半導体受光素子の製造方法
CN1097849C (zh) * 1996-06-07 2003-01-01 罗姆股份有限公司 半导体芯片及半导体芯片的制造方法
JPH11162990A (ja) 1997-11-26 1999-06-18 Nec Corp 半導体装置およびその製造方法
WO2001035465A1 (en) * 1999-11-11 2001-05-17 Koninklijke Philips Electronics N.V. Semiconductor device having a field effect transistor and a method of manufacturing such a device
JP2002134506A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same
JP3704072B2 (ja) * 2001-09-05 2005-10-05 株式会社東芝 半導体装置及びその製造方法
JP4247017B2 (ja) 2003-03-10 2009-04-02 浜松ホトニクス株式会社 放射線検出器の製造方法
JP4222092B2 (ja) * 2003-05-07 2009-02-12 富士電機デバイステクノロジー株式会社 半導体ウェハ、半導体装置および半導体装置の製造方法
JP2005038888A (ja) * 2003-07-15 2005-02-10 Renesas Technology Corp 半導体記憶装置およびその製造方法
US7518158B2 (en) * 2003-12-09 2009-04-14 Cree, Inc. Semiconductor light emitting devices and submounts
TW200637033A (en) * 2004-11-22 2006-10-16 Matsushita Electric Industrial Co Ltd Light-emitting device, light-emitting module, display unit, lighting unit and method for manufacturing light-emitting device
JP4889974B2 (ja) * 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
KR101314713B1 (ko) * 2006-06-16 2013-10-07 신꼬오덴기 고교 가부시키가이샤 반도체 장치, 그 제조 방법, 및 기판

Also Published As

Publication number Publication date
TW200917444A (en) 2009-04-16
US20090085164A1 (en) 2009-04-02
JP2009088336A (ja) 2009-04-23
TWI470755B (zh) 2015-01-21
EP2045840B1 (en) 2017-06-28
EP2045840A2 (en) 2009-04-08
US8026576B2 (en) 2011-09-27
EP2045840A3 (en) 2012-01-11

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