JP4959046B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4959046B2
JP4959046B2 JP2000239598A JP2000239598A JP4959046B2 JP 4959046 B2 JP4959046 B2 JP 4959046B2 JP 2000239598 A JP2000239598 A JP 2000239598A JP 2000239598 A JP2000239598 A JP 2000239598A JP 4959046 B2 JP4959046 B2 JP 4959046B2
Authority
JP
Japan
Prior art keywords
power supply
internal power
potential
circuit
current supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000239598A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002056673A (ja
JP2002056673A5 (enExample
Inventor
宏 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2000239598A priority Critical patent/JP4959046B2/ja
Priority to US09/784,136 priority patent/US6404178B2/en
Publication of JP2002056673A publication Critical patent/JP2002056673A/ja
Priority to US10/157,184 priority patent/US6614707B2/en
Publication of JP2002056673A5 publication Critical patent/JP2002056673A5/ja
Application granted granted Critical
Publication of JP4959046B2 publication Critical patent/JP4959046B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/462—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
JP2000239598A 2000-08-08 2000-08-08 半導体記憶装置 Expired - Fee Related JP4959046B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000239598A JP4959046B2 (ja) 2000-08-08 2000-08-08 半導体記憶装置
US09/784,136 US6404178B2 (en) 2000-08-08 2001-02-16 Power supply circuit capable of supplying a stable power supply potential even to a load consuming rapidly changing current
US10/157,184 US6614707B2 (en) 2000-08-08 2002-05-30 Power supply circuit stably supplying power supply potential even to load consuming rapidly changing current and semiconductor memory device with same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000239598A JP4959046B2 (ja) 2000-08-08 2000-08-08 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2002056673A JP2002056673A (ja) 2002-02-22
JP2002056673A5 JP2002056673A5 (enExample) 2007-08-16
JP4959046B2 true JP4959046B2 (ja) 2012-06-20

Family

ID=18731109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000239598A Expired - Fee Related JP4959046B2 (ja) 2000-08-08 2000-08-08 半導体記憶装置

Country Status (2)

Country Link
US (2) US6404178B2 (enExample)
JP (1) JP4959046B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6401167B1 (en) * 1997-10-10 2002-06-04 Rambus Incorporated High performance cost optimized memory
WO1999019805A1 (en) 1997-10-10 1999-04-22 Rambus Incorporated Method and apparatus for two step memory write operations
US6879534B2 (en) * 2002-11-01 2005-04-12 Hewlett-Packard Development Company, L.P. Method and system for minimizing differential amplifier power supply sensitivity
DE10324611A1 (de) * 2003-05-30 2004-12-30 Infineon Technologies Ag Integrierter Halbleiterspeicher und Verfahren zur Reduzierung von Leckströmen in einem Halbleiterspeicher
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
WO2005120025A1 (en) * 2004-06-04 2005-12-15 Hanwool Information Tech. Co., Ltd. El sheet and dome keypad using the same
JP4354360B2 (ja) * 2004-07-26 2009-10-28 Ｏｋｉセミコンダクタ株式会社 降圧電源装置
JP4572779B2 (ja) * 2005-09-07 2010-11-04 株式会社デンソー 電源回路
JP4556812B2 (ja) * 2005-09-07 2010-10-06 株式会社デンソー 電源回路
JP4937078B2 (ja) * 2007-10-22 2012-05-23 株式会社東芝 定電圧電源回路
JP5128400B2 (ja) * 2008-07-18 2013-01-23 ルネサスエレクトロニクス株式会社 電流駆動回路
JP4912431B2 (ja) * 2009-06-17 2012-04-11 ラピスセミコンダクタ株式会社 降圧電源装置
JP5566252B2 (ja) * 2010-10-13 2014-08-06 ラピスセミコンダクタ株式会社 半導体メモリ
CN102411393B (zh) * 2011-11-02 2013-10-02 四川和芯微电子股份有限公司 基准电流源电路及系统
JP5733771B2 (ja) * 2014-06-17 2015-06-10 ラピスセミコンダクタ株式会社 半導体メモリ
KR20190130869A (ko) * 2018-05-15 2019-11-25 에스케이하이닉스 주식회사 메모리 장치 및 이를 포함하는 메모리 시스템

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2883625B2 (ja) * 1989-03-30 1999-04-19 株式会社東芝 Ｍｏｓ型充電回路
KR930006228B1 (ko) * 1990-07-20 1993-07-09 삼성전자 주식회사 신호지연회로
JP2851767B2 (ja) * 1992-10-15 1999-01-27 三菱電機株式会社 電圧供給回路および内部降圧回路
JP2925422B2 (ja) 1993-03-12 1999-07-28 株式会社東芝 半導体集積回路
JP3569310B2 (ja) * 1993-10-14 2004-09-22 株式会社ルネサステクノロジ 半導体記憶装置
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
JPH08153388A (ja) * 1994-11-28 1996-06-11 Mitsubishi Electric Corp 半導体記憶装置
JPH09147557A (ja) * 1995-11-17 1997-06-06 Mitsubishi Electric Corp 半導体記憶装置および半導体装置
JPH11144465A (ja) * 1997-11-10 1999-05-28 Texas Instr Japan Ltd 半導体記憶装置
JP2000011649A (ja) * 1998-06-26 2000-01-14 Mitsubishi Electric Corp 半導体装置
JP2000228084A (ja) * 1999-02-05 2000-08-15 Mitsubishi Electric Corp 電圧発生回路

Also Published As

Publication number Publication date
US6404178B2 (en) 2002-06-11
JP2002056673A (ja) 2002-02-22
US6614707B2 (en) 2003-09-02
US20020145412A1 (en) 2002-10-10
US20020017899A1 (en) 2002-02-14

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