JP4951864B2 - 磁気検出素子 - Google Patents
磁気検出素子 Download PDFInfo
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- JP4951864B2 JP4951864B2 JP2005057597A JP2005057597A JP4951864B2 JP 4951864 B2 JP4951864 B2 JP 4951864B2 JP 2005057597 A JP2005057597 A JP 2005057597A JP 2005057597 A JP2005057597 A JP 2005057597A JP 4951864 B2 JP4951864 B2 JP 4951864B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 442
- 238000001514 detection method Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 91
- 239000000203 mixture Substances 0.000 claims description 74
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 37
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 29
- 230000005415 magnetization Effects 0.000 claims description 24
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 239000000696 magnetic material Substances 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- 229910052703 rhodium Inorganic materials 0.000 claims description 8
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 636
- 239000010408 film Substances 0.000 description 52
- 230000008878 coupling Effects 0.000 description 38
- 238000010168 coupling process Methods 0.000 description 38
- 238000005859 coupling reaction Methods 0.000 description 38
- 230000005294 ferromagnetic effect Effects 0.000 description 23
- 239000010409 thin film Substances 0.000 description 21
- 238000004544 sputter deposition Methods 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 230000008859 change Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000009977 dual effect Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229910003321 CoFe Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000005293 ferrimagnetic effect Effects 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910019233 CoFeNi Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 230000005316 antiferromagnetic exchange Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 229910001291 heusler alloy Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- DTJAVSFDAWLDHQ-UHFFFAOYSA-N [Cr].[Co].[Pt] Chemical compound [Cr].[Co].[Pt] DTJAVSFDAWLDHQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- GUBSQCSIIDQXLB-UHFFFAOYSA-N cobalt platinum Chemical compound [Co].[Pt].[Pt].[Pt] GUBSQCSIIDQXLB-UHFFFAOYSA-N 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層と、を有し、前記固定磁性層、前記非磁性材料層、及び前記フリー磁性層の膜面に対して垂直方向にセンス電流が流されるCPP型(CIP型及びTMR型とは異なる)の磁気検出素子において、
前記固定磁性層あるいは前記フリー磁性層の少なくとも一方は、組成式が、XaYbZcαdで表される磁性合金層を有し、元素αの組成比dは、5原子%以上で15.0原子%以下の範囲内であり、前記元素αは、前記磁性合金層中で、膜厚方向に向けて組成変調していることを特徴とするものである。
4.組成式がCoaMnbGecCudで表される磁性合金層。
基本膜構成は、下地層1;Ta(30)/シード層2;NiFeCr(50)/下側反強磁性層3;IrMn(70)/下側固定磁性層4[第1磁性層4a;Fe30原子%Co70原子%(30)/非磁性中間層4b;Ru(9.1)/第2固定磁性層4c]/非磁性材料層5;Cu(43)/フリー磁性層6/非磁性材料層7;Cu(43)/上側固定磁性層8[第2磁性層8c/非磁性中間層8b;Ru(9.1)/第1固定磁性層8a;Fe40原子%Co60原子%(30)]/上側反強磁性層9;IrMn(70)/保護層10;Ta(200)であった。
サンプル19〜23をグループAとし、前記グループAでの各サンプル19〜23における第2固定磁性層4c,8c中に含まれるCoMnGeの層数と、ΔRAとの関係、及び前記CoMnGeの層数と、強磁性結合磁界Hinとの関係について調べた。なお、サンプル18のΔRAと強磁性結合磁界Hinもグラフ上に載せた。
2 シード層
3、9 反強磁性層
4、8 固定磁性層
4c1、8c1 非磁性材料層側磁性層
4c2、8c2 非磁性中間層側磁性層
5、7 非磁性材料層
6 フリー磁性層
10 保護層
40、42、44 磁性層
41、43、45 中間層
Claims (9)
- 磁化方向が固定される固定磁性層と、前記固定磁性層に非磁性材料層を介して形成され、外部磁界により磁化方向が変動するフリー磁性層と、を有し、前記固定磁性層、前記非磁性材料層、及び前記フリー磁性層の膜面に対して垂直方向にセンス電流が流されるCPP型(CIP型及びTMR型とは異なる)の磁気検出素子において、
前記固定磁性層あるいは前記フリー磁性層の少なくとも一方は、組成式が、XaYbZcαdで表される磁性合金層を有し、元素αの組成比dは、5原子%以上で15.0原子%以下の範囲内であり、前記元素αは、前記磁性合金層中で、膜厚方向に向けて組成変調していることを特徴とする磁気検出素子。
ただし元素XはCo、Rh、Pt、Au、Pd、Ir、Ru、Ag、Zn、Cd、Feのうち1種または2種以上の元素であり、元素YはMn、Fe、Ti、V、Zr、Nb、Hf、Ta、Cr、Coのうち1種または2種以上の元素であり、元素ZはAl、Sn、In、Sb、Ga、Si、Ge、Pb、Znのうち1種または2種以上の元素であり、元素αは、Cuであり、a,b,c,dは磁性合金層内における平均組成比(原子%)であり、a+b+c+d=100原子%の関係を満たす。 - 前記元素αは、前記磁性合金層の下面及び上面よりも、膜中に組成比の高い領域が存在する請求項1記載の磁気検出素子。
- 前記磁性合金層の下面側から上面側に向けて、元素αの組成比が増加する領域と、減少する領域とが交互に現われる請求項1または2に記載の磁気検出素子。
- 組成比a:組成比b:組成比cは2:1:1である請求項1ないし3のいずれかに記載の磁気検出素子。
- 前記磁性合金層は、少なくとも前記非磁性材料層に接する界面に形成される請求項1ないし4のいずれかに記載の磁気検出素子。
- 前記固定磁性層が第1固定磁性層と、非磁性中間層と第2固定磁性層との積層構造で形成され、前記第2固定磁性層と前記非磁性材料層とは接して形成され、さらに前記第2固定磁性層は、非磁性中間層側磁性層と、非磁性材料層側磁性層とで形成され、前記非磁性材料層側磁性層が、前記磁性合金層で形成される請求項1ないし5のいずれかに記載の磁気検出素子。
- 反強磁性層と、この反強磁性層と接して形成され、前記反強磁性層との交換異方性磁界により磁化方向が固定される前記固定磁性層と、前記固定磁性層に前記非磁性材料層を介して形成された前記フリー磁性層とを有する請求項1ないし6のいずれかに記載の磁気検出素子。
- 前記フリー磁性層の上下に積層された前記非磁性材料層と、一方の前記非磁性材料層の上および他方の前記非磁性材料層の下に位置する前記固定磁性層を有する請求項1ないし6のいずれかに記載の磁気検出素子。
- 一方の前記固定磁性層の上および他方の前記固定磁性層の下に位置して、交換異方性磁界によりそれぞれの前記固定磁性層の磁化方向を一定の方向に固定する反強磁性層を有する請求項8記載の磁気検出素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005057597A JP4951864B2 (ja) | 2005-03-02 | 2005-03-02 | 磁気検出素子 |
GB0602490A GB2423860A (en) | 2005-03-02 | 2006-02-08 | Magnetic detecting device |
US11/365,559 US7480122B2 (en) | 2005-03-02 | 2006-02-28 | Magnetic detecting device having free layer or pinned layer formed by lamination of magnetic alloy and Cu layer and method of manufacturing magnetic detecting device |
Applications Claiming Priority (1)
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JP2005057597A JP4951864B2 (ja) | 2005-03-02 | 2005-03-02 | 磁気検出素子 |
Publications (2)
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JP2006245208A JP2006245208A (ja) | 2006-09-14 |
JP4951864B2 true JP4951864B2 (ja) | 2012-06-13 |
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JP2005057597A Expired - Fee Related JP4951864B2 (ja) | 2005-03-02 | 2005-03-02 | 磁気検出素子 |
Country Status (3)
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US (1) | US7480122B2 (ja) |
JP (1) | JP4951864B2 (ja) |
GB (1) | GB2423860A (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4826097B2 (ja) * | 2005-02-23 | 2011-11-30 | Tdk株式会社 | 磁気検出素子及びその製造方法 |
JP4483666B2 (ja) * | 2005-04-08 | 2010-06-16 | Tdk株式会社 | 磁気検出素子及びその製造方法 |
JP4544037B2 (ja) * | 2005-05-31 | 2010-09-15 | Tdk株式会社 | 磁気検出素子及びその製造方法 |
JP2007227748A (ja) * | 2006-02-24 | 2007-09-06 | Alps Electric Co Ltd | 磁気抵抗効果素子 |
JP2007317824A (ja) | 2006-05-25 | 2007-12-06 | Tdk Corp | 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置 |
JP2008243920A (ja) * | 2007-03-26 | 2008-10-09 | Toshiba Corp | 磁気抵抗効果再生素子、磁気ヘッド、および磁気再生装置 |
US8760818B1 (en) | 2013-01-09 | 2014-06-24 | Western Digital (Fremont), Llc | Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys |
CN104630568B (zh) * | 2013-11-07 | 2017-06-06 | 中国科学院物理研究所 | 一种MnCoGe基铁磁马氏体相变材料及其制备方法和用途 |
US9406365B1 (en) | 2015-01-26 | 2016-08-02 | International Business Machines Corporation | Underlayers for textured films of Heusler compounds |
JP6803523B2 (ja) * | 2015-03-31 | 2020-12-23 | パナソニックIpマネジメント株式会社 | 薄膜磁石および薄膜磁石の製造方法 |
US9643385B1 (en) | 2015-12-02 | 2017-05-09 | The Board Of Trustees Of The University Of Alabama | Layered heusler alloys and methods for the fabrication and use thereof |
EP3327151A1 (fr) * | 2016-11-04 | 2018-05-30 | Richemont International S.A. | Résonateur pour piece d'horlogerie |
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US5793279A (en) * | 1996-08-26 | 1998-08-11 | Read-Rite Corporation | Methods and compositions for optimizing interfacial properties of magnetoresistive sensors |
JP2001217483A (ja) * | 2000-02-04 | 2001-08-10 | Alps Electric Co Ltd | トンネル型磁気抵抗効果型素子及びその製造方法 |
JP2002150512A (ja) | 2000-11-08 | 2002-05-24 | Sony Corp | 磁気抵抗効果素子および磁気抵抗効果型磁気ヘッド |
TWI222630B (en) * | 2001-04-24 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Magnetoresistive element and magnetoresistive memory device using the same |
JP3565268B2 (ja) | 2001-06-22 | 2004-09-15 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
JP2003209228A (ja) * | 2001-11-07 | 2003-07-25 | Toshiba Corp | 磁気記憶装置及びその製造方法 |
JP3607678B2 (ja) * | 2002-01-24 | 2005-01-05 | アルプス電気株式会社 | 磁気検出素子 |
JP3699954B2 (ja) * | 2002-10-25 | 2005-09-28 | 株式会社東芝 | 磁気メモリ |
JP3813920B2 (ja) * | 2002-11-13 | 2006-08-23 | 株式会社東芝 | 磁気デバイス及び磁気メモリ |
JP2004214251A (ja) | 2002-12-27 | 2004-07-29 | Hitachi Ltd | 磁気抵抗効果素子、及びそれを備える磁気ヘッド並びに磁気記録再生装置 |
JP2005019484A (ja) * | 2003-06-24 | 2005-01-20 | Hitachi Ltd | 磁気抵抗効果素子及び磁気ヘッド |
JP4594679B2 (ja) * | 2004-09-03 | 2010-12-08 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ |
JP2008135432A (ja) * | 2006-11-27 | 2008-06-12 | Tdk Corp | トンネル磁気抵抗効果素子及びその製造方法 |
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2005
- 2005-03-02 JP JP2005057597A patent/JP4951864B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-08 GB GB0602490A patent/GB2423860A/en not_active Withdrawn
- 2006-02-28 US US11/365,559 patent/US7480122B2/en active Active
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Publication number | Publication date |
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JP2006245208A (ja) | 2006-09-14 |
US7480122B2 (en) | 2009-01-20 |
GB2423860A (en) | 2006-09-06 |
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