JP4948785B2 - シリコン単結晶基板中に、ｍｏｓｆｅｔデバイスのための接合を形成するための方法 - Google Patents

シリコン単結晶基板中に、ｍｏｓｆｅｔデバイスのための接合を形成するための方法 Download PDF

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JP4948785B2
JP4948785B2 JP2005147746A JP2005147746A JP4948785B2 JP 4948785 B2 JP4948785 B2 JP 4948785B2 JP 2005147746 A JP2005147746 A JP 2005147746A JP 2005147746 A JP2005147746 A JP 2005147746A JP 4948785 B2 JP4948785 B2 JP 4948785B2
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polycrystalline
germanium
silicon
vapor deposition
chemical vapor
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JP2005340816A5 (https=
JP2005340816A (ja
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ケヴィン・コック・チャン
ロバート・ジェイ・ミラー
エリン・シー・ジョーンズ
アトゥル・アジュメーラ
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
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    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
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    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
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    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2005147746A 2004-05-21 2005-05-20 シリコン単結晶基板中に、ｍｏｓｆｅｔデバイスのための接合を形成するための方法 Expired - Fee Related JP4948785B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/851,821 2004-05-21
US10/851,821 US7135391B2 (en) 2004-05-21 2004-05-21 Polycrystalline SiGe junctions for advanced devices

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JP2005340816A JP2005340816A (ja) 2005-12-08
JP2005340816A5 JP2005340816A5 (https=) 2008-05-15
JP4948785B2 true JP4948785B2 (ja) 2012-06-06

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US (3) US7135391B2 (https=)
JP (1) JP4948785B2 (https=)
CN (1) CN100369199C (https=)
TW (1) TWI346974B (https=)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US8476220B2 (en) 1998-07-21 2013-07-02 Denis Barritault Biocompatible polymers, process for their preparation and compositions containing them

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US8323157B2 (en) 2004-02-24 2012-12-04 Total Gym Global Corp. Method of using an exercise device having an adjustable incline
US7135391B2 (en) * 2004-05-21 2006-11-14 International Business Machines Corporation Polycrystalline SiGe junctions for advanced devices
NO324539B1 (no) * 2005-06-14 2007-11-19 Thin Film Electronics Asa Fremgangsmate i fabrikasjonen av en ferroelektrisk minneinnretning
US8278176B2 (en) * 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080124874A1 (en) * 2006-11-03 2008-05-29 Samsung Electronics Co., Ltd. Methods of Forming Field Effect Transistors Having Silicon-Germanium Source and Drain Regions
JP2009043916A (ja) 2007-08-08 2009-02-26 Toshiba Corp 半導体装置及びその製造方法
DE102007052626B4 (de) 2007-11-05 2018-05-30 Robert Bosch Gmbh Verfahren zur Herstellung von porösen Strukturen in auf Silizium basierenden Halbleiterstrukturen
US9095506B2 (en) * 2008-11-17 2015-08-04 Allergan, Inc. Biodegradable alpha-2 agonist polymeric implants and therapeutic uses thereof
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
JP2013089889A (ja) * 2011-10-21 2013-05-13 Elpida Memory Inc 半導体装置及びその製造方法
US8741726B2 (en) * 2011-12-01 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Reacted layer for improving thickness uniformity of strained structures
US11575043B1 (en) * 2021-07-23 2023-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and manufacturing method of the same

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
TW200539323A (en) 2005-12-01
TWI346974B (en) 2011-08-11
US20050260832A1 (en) 2005-11-24
CN100369199C (zh) 2008-02-13
US7741165B2 (en) 2010-06-22
US7387924B2 (en) 2008-06-17
US20080248635A1 (en) 2008-10-09
US20070010076A1 (en) 2007-01-11
JP2005340816A (ja) 2005-12-08
CN1707754A (zh) 2005-12-14
US7135391B2 (en) 2006-11-14

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