JPS57128022A - Forming method for silicon epitaxially grown film - Google Patents

Forming method for silicon epitaxially grown film

Info

Publication number
JPS57128022A
JPS57128022A JP1256781A JP1256781A JPS57128022A JP S57128022 A JPS57128022 A JP S57128022A JP 1256781 A JP1256781 A JP 1256781A JP 1256781 A JP1256781 A JP 1256781A JP S57128022 A JPS57128022 A JP S57128022A
Authority
JP
Japan
Prior art keywords
gas
discharge
geh4
sih4
epitaxially grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1256781A
Other languages
Japanese (ja)
Other versions
JPH0258768B2 (en
Inventor
Tadatsugu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP1256781A priority Critical patent/JPS57128022A/en
Publication of JPS57128022A publication Critical patent/JPS57128022A/en
Publication of JPH0258768B2 publication Critical patent/JPH0258768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a epitaxially grown film having excellent crystallinity by feeding GeH4 gas into a container initially of an epitaxial growth, discharge- decomposing SiH4 gas and discharge-decomposing the GeH4 gas, thereby performing the epitaxial growth. CONSTITUTION:SiH4 gas is fed from a supply source 16a into the sample gas mixture unit 4 of a reaction container 1, the gas is then discharge-decomposing with discharge electrodes M1, M2, mainly Si atoms and molecules thus produced are directed toward a substrate S, thereby forming an Si epitaxially grown film on the substrate S. In this case ultrafine amount of GeH4 gas is supplied from a supply source 16b together with the SiH4 gas into the unit 4 at least initally of the step of epitaxially growing. Thus, the mixture gas of the SiH4, GeH4 is fed to a discharge decomposition unit 3, thereby performing the discharge- decompositions of SiH4 Si+H2, GeH4 Ge+H2. In this manner, the Si mixed with ultrafine amount of Ge is fed onto the substrate S, thereby growing the epitaxially grown film on the substrate S.
JP1256781A 1981-01-30 1981-01-30 Forming method for silicon epitaxially grown film Granted JPS57128022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1256781A JPS57128022A (en) 1981-01-30 1981-01-30 Forming method for silicon epitaxially grown film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1256781A JPS57128022A (en) 1981-01-30 1981-01-30 Forming method for silicon epitaxially grown film

Publications (2)

Publication Number Publication Date
JPS57128022A true JPS57128022A (en) 1982-08-09
JPH0258768B2 JPH0258768B2 (en) 1990-12-10

Family

ID=11808924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1256781A Granted JPS57128022A (en) 1981-01-30 1981-01-30 Forming method for silicon epitaxially grown film

Country Status (1)

Country Link
JP (1) JPS57128022A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208824A (en) * 1985-03-14 1986-09-17 Mitsui Toatsu Chem Inc Semiconductor thin film
JPS61256732A (en) * 1985-05-10 1986-11-14 Fujitsu Ltd Method for selective epitaxial growth
JP2005340816A (en) * 2004-05-21 2005-12-08 Internatl Business Mach Corp <Ibm> POLYCRYSTALLINE SiGe JUNCTION FOR ADVANCED DEVICE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61208824A (en) * 1985-03-14 1986-09-17 Mitsui Toatsu Chem Inc Semiconductor thin film
JPS61256732A (en) * 1985-05-10 1986-11-14 Fujitsu Ltd Method for selective epitaxial growth
JP2005340816A (en) * 2004-05-21 2005-12-08 Internatl Business Mach Corp <Ibm> POLYCRYSTALLINE SiGe JUNCTION FOR ADVANCED DEVICE

Also Published As

Publication number Publication date
JPH0258768B2 (en) 1990-12-10

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