JP4947841B2 - 荷電粒子線露光装置 - Google Patents

荷電粒子線露光装置 Download PDF

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Publication number
JP4947841B2
JP4947841B2 JP2001074736A JP2001074736A JP4947841B2 JP 4947841 B2 JP4947841 B2 JP 4947841B2 JP 2001074736 A JP2001074736 A JP 2001074736A JP 2001074736 A JP2001074736 A JP 2001074736A JP 4947841 B2 JP4947841 B2 JP 4947841B2
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JP
Japan
Prior art keywords
electrode
optical system
substrate
electron optical
charged particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001074736A
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English (en)
Japanese (ja)
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JP2001345260A (ja
JP2001345260A5 (enExample
Inventor
治人 小野
康弘 島田
隆行 八木
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Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001074736A priority Critical patent/JP4947841B2/ja
Priority to US09/819,669 priority patent/US6872950B2/en
Priority to AT01303029T priority patent/ATE443922T1/de
Priority to DE60139968T priority patent/DE60139968D1/de
Priority to EP01303029A priority patent/EP1139384B1/en
Publication of JP2001345260A publication Critical patent/JP2001345260A/ja
Publication of JP2001345260A5 publication Critical patent/JP2001345260A5/ja
Application granted granted Critical
Publication of JP4947841B2 publication Critical patent/JP4947841B2/ja
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001074736A 2000-03-31 2001-03-15 荷電粒子線露光装置 Expired - Fee Related JP4947841B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001074736A JP4947841B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置
US09/819,669 US6872950B2 (en) 2000-03-31 2001-03-29 Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method
AT01303029T ATE443922T1 (de) 2000-03-31 2001-03-30 Elektronenoptische anordnung, verfahren zur herstellung derselben, ladungsträgerteilchenstrahl-belichtungsgerät und verfahren zur herstellung der zugehörigen vorrichtung
DE60139968T DE60139968D1 (de) 2000-03-31 2001-03-30 Elektronenoptische Anordnung, Verfahren zur Herstellung derselben, Ladungsträgerteilchenstrahl-Belichtungsgerät und Verfahren zur Herstellung der zugehörigen Vorrichtung
EP01303029A EP1139384B1 (en) 2000-03-31 2001-03-30 Electron optical system array, method of fabricating the same, charged-particle beam exposure apparatus, and device manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000097067 2000-03-31
JP2000097067 2000-03-31
JP2000-97067 2000-03-31
JP2001074736A JP4947841B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置

Publications (3)

Publication Number Publication Date
JP2001345260A JP2001345260A (ja) 2001-12-14
JP2001345260A5 JP2001345260A5 (enExample) 2008-04-17
JP4947841B2 true JP4947841B2 (ja) 2012-06-06

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Family Applications (1)

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JP2001074736A Expired - Fee Related JP4947841B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置

Country Status (5)

Country Link
US (1) US6872950B2 (enExample)
EP (1) EP1139384B1 (enExample)
JP (1) JP4947841B2 (enExample)
AT (1) ATE443922T1 (enExample)
DE (1) DE60139968D1 (enExample)

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US20010054690A1 (en) 2001-12-27
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EP1139384B1 (en) 2009-09-23
DE60139968D1 (de) 2009-11-05
US6872950B2 (en) 2005-03-29
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