JP4944690B2 - 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法 - Google Patents

位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4944690B2
JP4944690B2 JP2007180152A JP2007180152A JP4944690B2 JP 4944690 B2 JP4944690 B2 JP 4944690B2 JP 2007180152 A JP2007180152 A JP 2007180152A JP 2007180152 A JP2007180152 A JP 2007180152A JP 4944690 B2 JP4944690 B2 JP 4944690B2
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JP
Japan
Prior art keywords
optical axis
detection system
wafer
wafer alignment
optical
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Expired - Fee Related
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JP2007180152A
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English (en)
Japanese (ja)
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JP2009016761A5 (zh
JP2009016761A (ja
Inventor
普教 前田
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2007180152A priority Critical patent/JP4944690B2/ja
Priority to TW097124973A priority patent/TWI387045B/zh
Priority to US12/169,029 priority patent/US8049891B2/en
Priority to KR1020080066324A priority patent/KR100991067B1/ko
Publication of JP2009016761A publication Critical patent/JP2009016761A/ja
Publication of JP2009016761A5 publication Critical patent/JP2009016761A5/ja
Application granted granted Critical
Publication of JP4944690B2 publication Critical patent/JP4944690B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2007180152A 2007-07-09 2007-07-09 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法 Expired - Fee Related JP4944690B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007180152A JP4944690B2 (ja) 2007-07-09 2007-07-09 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法
TW097124973A TWI387045B (zh) 2007-07-09 2008-07-02 位置偵測設備的調整方法、曝光設備及裝置製造方法
US12/169,029 US8049891B2 (en) 2007-07-09 2008-07-08 Adjustment method for position detection apparatus, exposure apparatus, and device fabrication method
KR1020080066324A KR100991067B1 (ko) 2007-07-09 2008-07-09 위치검출장치의 조정방법, 노광장치 및 디바이스 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007180152A JP4944690B2 (ja) 2007-07-09 2007-07-09 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2009016761A JP2009016761A (ja) 2009-01-22
JP2009016761A5 JP2009016761A5 (zh) 2010-08-26
JP4944690B2 true JP4944690B2 (ja) 2012-06-06

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JP2007180152A Expired - Fee Related JP4944690B2 (ja) 2007-07-09 2007-07-09 位置検出装置の調整方法、位置検出装置、露光装置及びデバイス製造方法

Country Status (4)

Country Link
US (1) US8049891B2 (zh)
JP (1) JP4944690B2 (zh)
KR (1) KR100991067B1 (zh)
TW (1) TWI387045B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5203675B2 (ja) * 2007-11-02 2013-06-05 キヤノン株式会社 位置検出器、位置検出方法、露光装置及びデバイス製造方法
JP5333151B2 (ja) * 2009-10-26 2013-11-06 セイコーエプソン株式会社 光学式位置検出装置および位置検出機能付き表示装置
CN103885295B (zh) * 2012-12-19 2016-09-28 上海微电子装备有限公司 一种曝光装置及其调焦调平方法
US9726984B2 (en) * 2013-07-09 2017-08-08 Kla-Tencor Corporation Aperture alignment in scatterometry metrology systems
WO2015006233A1 (en) * 2013-07-09 2015-01-15 Kla-Tencor Corporation Aperture alignment in scatterometry metrology systems
JP6366261B2 (ja) * 2013-12-05 2018-08-01 キヤノン株式会社 リソグラフィ装置及び物品の製造方法
CN105988305B (zh) * 2015-02-28 2018-03-02 上海微电子装备（集团）股份有限公司 硅片预对准方法
US10785394B2 (en) 2015-08-28 2020-09-22 Kla Corporation Imaging performance optimization methods for semiconductor wafer inspection
CN106569390B (zh) * 2015-10-08 2019-01-18 上海微电子装备（集团）股份有限公司 一种投影曝光装置及方法
CN107290937B (zh) * 2016-03-31 2018-10-16 上海微电子装备（集团）股份有限公司 一种投影曝光装置及方法
JP7054365B2 (ja) * 2018-05-25 2022-04-13 キヤノン株式会社 評価方法、露光方法、および物品製造方法
JP7220554B2 (ja) * 2018-12-04 2023-02-10 東京エレクトロン株式会社 プローブ装置、及び、プローブ装置の調整方法
CN113132621B (zh) * 2020-01-10 2022-04-26 长鑫存储技术有限公司 拍摄装置位置校正系统及方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5754299A (en) * 1995-01-13 1998-05-19 Nikon Corporation Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus
JP3327781B2 (ja) * 1995-10-13 2002-09-24 キヤノン株式会社 位置検出装置及びその検定方法と調整方法
JP3658378B2 (ja) 1995-10-13 2005-06-08 キヤノン株式会社 投影露光装置及び位置検出装置
WO1999040613A1 (fr) * 1998-02-09 1999-08-12 Nikon Corporation Procede de reglage d'un detecteur de position
US6975399B2 (en) * 1998-08-28 2005-12-13 Nikon Corporation mark position detecting apparatus
JP3994209B2 (ja) 1998-08-28 2007-10-17 株式会社ニコン 光学系の検査装置および検査方法並びに該検査装置を備えた位置合わせ装置および投影露光装置
JP3634198B2 (ja) * 1998-09-10 2005-03-30 富士通株式会社 位置ずれ検査装置の光学的収差測定方法
JP4725822B2 (ja) * 2000-07-10 2011-07-13 株式会社ニコン 光学的位置ずれ検出装置
JP4613357B2 (ja) * 2000-11-22 2011-01-19 株式会社ニコン 光学的位置ずれ測定装置の調整装置および方法
JP4078953B2 (ja) * 2002-11-05 2008-04-23 株式会社ニコン マーク位置検出装置ならびにその調整用基板および調整方法
US20040227944A1 (en) * 2003-02-28 2004-11-18 Nikon Corporation Mark position detection apparatus
JP2004356193A (ja) * 2003-05-27 2004-12-16 Canon Inc 露光装置及び露光方法
US7528954B2 (en) * 2004-05-28 2009-05-05 Nikon Corporation Method of adjusting optical imaging system, positional deviation detecting mark, method of detecting positional deviation, method of detecting position, position detecting device and mark identifying device
JP5036429B2 (ja) * 2007-07-09 2012-09-26 キヤノン株式会社 位置検出装置、露光装置、デバイス製造方法及び調整方法
JP5203675B2 (ja) * 2007-11-02 2013-06-05 キヤノン株式会社 位置検出器、位置検出方法、露光装置及びデバイス製造方法
JP2009224523A (ja) * 2008-03-14 2009-10-01 Canon Inc 露光方法、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
TW200919619A (en) 2009-05-01
KR20090006003A (ko) 2009-01-14
US8049891B2 (en) 2011-11-01
KR100991067B1 (ko) 2010-10-29
US20090015836A1 (en) 2009-01-15
TWI387045B (zh) 2013-02-21
JP2009016761A (ja) 2009-01-22

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