JP4942055B2 - ハンドル基板からmemsデバイスを取り外す方法 - Google Patents
ハンドル基板からmemsデバイスを取り外す方法 Download PDFInfo
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- JP4942055B2 JP4942055B2 JP2010504390A JP2010504390A JP4942055B2 JP 4942055 B2 JP4942055 B2 JP 4942055B2 JP 2010504390 A JP2010504390 A JP 2010504390A JP 2010504390 A JP2010504390 A JP 2010504390A JP 4942055 B2 JP4942055 B2 JP 4942055B2
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- mems device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1153—Temperature change for delamination [e.g., heating during delaminating, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Dicing (AREA)
- Detergent Compositions (AREA)
- Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
Description
閾値温度を超える温度に加熱するとMEMSデバイスへの接着力が低減する熱剥離接着剤によってMEMSデバイスを個別にボンディングしたハンドル基板を用意するステップと、
MEMSデバイスそれぞれの一表面の少なくとも一部に熱源を加えて、閾値温度を超える温度にMEMSデバイスを加熱するステップと、
ハンドル基板からMEMSデバイスを個別に取り外すステップとを含む。
集積回路ダイに剥離可能に係合するためのピッカーヘッドと、
集積回路ダイが閾値温度を超える温度まで加熱されるように、集積回路ダイの表面にビームを導くためのレーザと、
支持基板に対して相対的にピッカーヘッドを移動させるためのシャトルドライブ機構とを備える。
集積回路ダイが閾値温度を超える温度まで加熱されるように、集積回路ダイの一表面の少なくとも一部を加熱するためのヒータを有する、集積回路ダイに剥離可能に係合するためのピッカーヘッドと、
支持基板に対して相対的にピッカーヘッドを移動させるためのシャトルドライブ機構とを備える。
Claims (10)
- ハンドル基板から複数のMEMSデバイスを取り外す方法であって、
閾値温度を超える温度に加熱すると前記MEMSデバイスへの接着力が低減する熱剥離接着剤、によって前記MEMSデバイスを個別にボンディングした前記ハンドル基板を用意するステップと、
前記MEMSデバイスそれぞれの一表面の少なくとも一部に熱源の熱を加えて、前記閾値温度を超える温度に前記MEMSデバイスを加熱するステップと、
前記ハンドル基板から前記MEMSデバイスを個別に取り外すステップと、
を含み、
前記熱源がレーザであり、
前記MEMSデバイスが、前記MEMSデバイスの1つに係合するように構成されている自由端をもつ細長いアームを有するダイピッカーにより前記ハンドル基板から取り外され、
前記レーザが、前記ダイピッカーを通してビームを導いて、前記MEMSデバイスが取り外される前に前記MEMSデバイスを加熱する、
方法。 - 前記熱源が、前記MEMSデバイスの一表面の少なくとも一部と接触するように構成されている加熱表面である、請求項1に記載の方法。
- 前記加熱される表面が、前記熱剥離接着剤を剥離した後に前記ハンドル基板から前記MEMSデバイスをもち上げるために使用されるダイピッカー上にある、請求項2に記載の方法。
- 前記ダイピッカーが、熱を発生するための抵抗性ヒータを有し、
前記抵抗性ヒータが、加熱速度及び最大温度を所定の閾値内に保つように制御される、
請求項3に記載の方法。 - 集積回路ダイが所定の速度で加熱されるようにビームの強度を制御するステップをさらに含む、請求項1に記載の方法。
- 集積回路ダイの温度が所定の最大値を超えないように前記ビームの強度を制御するステップをさらに含む、請求項1に記載の方法。
- 前記熱剥離接着剤が、5秒未満で前記閾値温度まで加熱される、請求項1に記載の方法。
- 前記熱剥離接着剤が、2秒未満で前記閾値温度まで加熱される、請求項7に記載の方法。
- 前記閾値温度が、250℃未満である、請求項1に記載の方法。
- 前記閾値温度が、170℃〜190℃である、請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93908607P | 2007-05-20 | 2007-05-20 | |
US60/939,086 | 2007-05-20 | ||
PCT/AU2008/000626 WO2008141359A1 (en) | 2007-05-20 | 2008-05-06 | Method of removing mems devices from a handle substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010525580A JP2010525580A (ja) | 2010-07-22 |
JP4942055B2 true JP4942055B2 (ja) | 2012-05-30 |
Family
ID=40026323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504390A Active JP4942055B2 (ja) | 2007-05-20 | 2008-05-06 | ハンドル基板からmemsデバイスを取り外す方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20080283198A1 (ja) |
EP (1) | EP2146924B1 (ja) |
JP (1) | JP4942055B2 (ja) |
TW (3) | TW200908164A (ja) |
WO (1) | WO2008141359A1 (ja) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5572353B2 (ja) * | 2009-09-29 | 2014-08-13 | 日東電工株式会社 | 保護テープ剥離方法およびその装置 |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
US8349116B1 (en) * | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US8426227B1 (en) | 2011-11-18 | 2013-04-23 | LuxVue Technology Corporation | Method of forming a micro light emitting diode array |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
SG196693A1 (en) * | 2012-07-20 | 2014-02-13 | Rokko Systems Pte Ltd | Method and apparatus for the engagement of ic units |
US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
US20160131702A1 (en) * | 2014-11-10 | 2016-05-12 | Teradyne, Inc. | Assembling devices for probe card testing |
US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
US9324566B1 (en) | 2014-12-31 | 2016-04-26 | International Business Machines Corporation | Controlled spalling using a reactive material stack |
CN105246261B (zh) * | 2015-10-16 | 2018-06-29 | 京东方科技集团股份有限公司 | 一种芯片去除装置 |
US10629468B2 (en) | 2016-02-11 | 2020-04-21 | Skyworks Solutions, Inc. | Device packaging using a recyclable carrier substrate |
US10453763B2 (en) | 2016-08-10 | 2019-10-22 | Skyworks Solutions, Inc. | Packaging structures with improved adhesion and strength |
JP6839143B2 (ja) * | 2017-09-28 | 2021-03-03 | 芝浦メカトロニクス株式会社 | 素子実装装置、素子実装方法及び素子実装基板製造方法 |
CN108231651B (zh) * | 2017-12-26 | 2020-02-21 | 厦门市三安光电科技有限公司 | 微元件转移装置和转移方法 |
JP7319044B2 (ja) * | 2018-12-14 | 2023-08-01 | Tdk株式会社 | 素子アレイの製造装置と特定素子の除去装置 |
TW202114873A (zh) | 2019-06-03 | 2021-04-16 | 愛爾蘭商滿捷特科技公司 | 處理mems晶圓的方法 |
CN110349896B (zh) * | 2019-07-23 | 2021-11-12 | 深圳市律远汇智科技有限公司 | 一种具有调节功能的芯片拾取系统 |
KR102196378B1 (ko) * | 2020-04-13 | 2020-12-30 | 제엠제코(주) | 반도체 부품 부착 장비 |
WO2023015445A1 (zh) * | 2021-08-10 | 2023-02-16 | 重庆康佳光电技术研究院有限公司 | 芯片移除头、芯片移除系统及移除芯片的方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4804810A (en) * | 1986-06-19 | 1989-02-14 | Fairchild Semiconductor Corporation | Apparatus and method for tape bonding |
US4921564A (en) * | 1988-05-23 | 1990-05-01 | Semiconductor Equipment Corp. | Method and apparatus for removing circuit chips from wafer handling tape |
EP0419995B1 (de) * | 1989-09-29 | 1993-06-09 | Siemens Nixdorf Informationssysteme Aktiengesellschaft | Lötvorrichtung zum Auflöten von Bauelementen auf Leiterplatten |
GB9424659D0 (en) * | 1994-12-07 | 1995-02-01 | Belron Int Nv | Releasing of bonded screens |
JPH09321123A (ja) * | 1996-05-30 | 1997-12-12 | Kaijo Corp | 半導体部品供給装置 |
JP3147845B2 (ja) * | 1998-02-13 | 2001-03-19 | 日本電気株式会社 | チップ部品接合装置および方法 |
US6196439B1 (en) * | 1998-05-29 | 2001-03-06 | International Business Machines Corporation | Method and apparatus for μBGA removal and reattach |
US6352073B1 (en) * | 1998-11-12 | 2002-03-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing equipment |
US6946366B2 (en) * | 2000-12-05 | 2005-09-20 | Analog Devices, Inc. | Method and device for protecting micro electromechanical systems structures during dicing of a wafer |
US6982184B2 (en) * | 2001-05-02 | 2006-01-03 | Silverbrook Research Pty Ltd | Method of fabricating MEMS devices on a silicon wafer |
JP2004349416A (ja) * | 2003-05-21 | 2004-12-09 | Nikon Corp | Memsの製造方法 |
TWI234839B (en) * | 2004-03-25 | 2005-06-21 | Walsin Lihhwa Corp | Method for fixing wafer to carry out manufacturing process |
US20050282355A1 (en) * | 2004-06-18 | 2005-12-22 | Edwards David N | High density bonding of electrical devices |
TWI236058B (en) * | 2004-08-06 | 2005-07-11 | Touch Micro System Tech | Method of performing double side processes upon a wafer |
US7101620B1 (en) * | 2004-09-07 | 2006-09-05 | National Semiconductor Corporation | Thermal release wafer mount tape with B-stage adhesive |
KR100740762B1 (ko) * | 2005-02-10 | 2007-07-19 | 오므론 가부시키가이샤 | 접합 방법 및 접합 장치 |
KR101113850B1 (ko) * | 2005-08-11 | 2012-02-29 | 삼성테크윈 주식회사 | 플립 칩 본딩 방법 및 이를 채택한 플립 칩 본딩 장치 |
US7507312B2 (en) * | 2005-08-23 | 2009-03-24 | The Boeing Company | Using laser shock loads to debond structures |
JP2007335447A (ja) * | 2006-06-12 | 2007-12-27 | Fujitsu Ltd | 電子部品除去方法及び装置 |
US20080006922A1 (en) * | 2006-07-08 | 2008-01-10 | Charles Gutentag | Thermal release adhesive-backed carrier tapes |
KR100899421B1 (ko) * | 2007-02-28 | 2009-05-27 | 삼성테크윈 주식회사 | 칩 본딩 툴, 그 본딩 툴을 구비하는 플립 칩 본딩 장치 및 방법 |
KR101165029B1 (ko) * | 2007-04-24 | 2012-07-13 | 삼성테크윈 주식회사 | 칩 가열장치, 이를 구비한 플립 칩 본더 및 이를 이용한플립 칩 본딩 방법 |
US20090008032A1 (en) * | 2007-07-03 | 2009-01-08 | Assembleon B.V. | Method for picking up a component as well as a device suitable for carrying out such a method |
-
2008
- 2008-05-06 US US12/115,546 patent/US20080283198A1/en not_active Abandoned
- 2008-05-06 TW TW097116658A patent/TW200908164A/zh unknown
- 2008-05-06 US US12/115,544 patent/US20080283190A1/en not_active Abandoned
- 2008-05-06 TW TW097116657A patent/TWI430937B/zh active
- 2008-05-06 EP EP08733447A patent/EP2146924B1/en active Active
- 2008-05-06 US US12/115,545 patent/US20080283197A1/en not_active Abandoned
- 2008-05-06 TW TW097116647A patent/TW200908189A/zh unknown
- 2008-05-06 JP JP2010504390A patent/JP4942055B2/ja active Active
- 2008-05-06 WO PCT/AU2008/000626 patent/WO2008141359A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2008141359A1 (en) | 2008-11-27 |
US20080283197A1 (en) | 2008-11-20 |
EP2146924B1 (en) | 2013-03-06 |
JP2010525580A (ja) | 2010-07-22 |
TW200911678A (en) | 2009-03-16 |
US20080283190A1 (en) | 2008-11-20 |
EP2146924A1 (en) | 2010-01-27 |
TW200908164A (en) | 2009-02-16 |
EP2146924A4 (en) | 2012-03-07 |
TW200908189A (en) | 2009-02-16 |
TWI430937B (zh) | 2014-03-21 |
US20080283198A1 (en) | 2008-11-20 |
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