TW202114873A - 處理mems晶圓的方法 - Google Patents
處理mems晶圓的方法 Download PDFInfo
- Publication number
- TW202114873A TW202114873A TW109113164A TW109113164A TW202114873A TW 202114873 A TW202114873 A TW 202114873A TW 109113164 A TW109113164 A TW 109113164A TW 109113164 A TW109113164 A TW 109113164A TW 202114873 A TW202114873 A TW 202114873A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- tape
- mems
- carrier substrate
- bonding tape
- Prior art date
Links
- 235000012431 wafers Nutrition 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000008569 process Effects 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000004380 ashing Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 230000001070 adhesive effect Effects 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 231100001240 inorganic pollutant Toxicity 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Dicing (AREA)
- Micromachines (AREA)
Abstract
一種處理MEMS晶圓的方法,包含以下步驟:(i)將第一載體基板附接到MEMS晶圓的第一側,第一載體基板藉由第一晶圓接合帶以及無聚矽氧的剝離帶附接,剝離帶接觸MEMS晶圓的第一側;(ii)在MEMS晶圓的相對的第二側上執行晶圓處理步驟;(iii)藉由暴露於能源從MEMS晶圓的第一側釋放第一載體基板,能源選擇性地從MEMS晶圓的第一側釋放晶圓接合帶;以及(iv)將剝離帶從MEMS晶圓的第一側剝離。
Description
本發明涉及處理MEMS晶圓的暫時晶圓接合方法。本發明主要是為了使敏感MEMS裝置(例如噴墨裝置)受到常規晶圓接合帶產生的汙染物的污染減到最小所開發的。
申請人已經開發了一系列的Memjet®噴墨印表機,例如在WO2011/143700、WO2011/143699以及WO2009/ 089567中所描述的,其內容藉由引用併入本文。Memjet®印表機將固定的頁寬列印頭與進給機構結合使用,進給機構在一單程中將列印介質送入通過列印頭。因此,Memjet®印表機比常規的掃描噴墨印表機提供更高的列印速度。
為了將矽的量減到最小,進而降低頁寬列印頭的成本,每個Memjet®列印頭IC皆藉由集成的CMOS/ MEMS製程製造,以提供高的噴嘴填充密度。典型的Memjet®列印頭IC包含6400個噴嘴裝置,這說明在包含11個Memjet®列印頭IC的A4列印頭中有70400個噴嘴裝置。
MEMS製造需要用於處理矽晶圓的各種技術。為了在矽晶圓的一側上執行MEMS製程(例如蝕刻、沉積、研磨等),可以將晶圓的相對側暫時地附接到例如玻璃處理晶圓的載體基板。一般使用晶圓接合帶將矽晶圓暫時地附接到載體基板。各種晶圓接合帶對於本技術領域中具有通常知識者而言是已知的,但是通常分為兩類:紫外線解膠帶(UV-release tape)以及熱解膠帶(thermal-release tape)。紫外線解膠帶暴露於紫外線光下會失去黏著特性,而熱解膠帶暴露於熱量下會失去黏著特性。US 6846692及WO2008/141359(其每一者的內容藉由引用併入本文)描述了使用紫外線解膠帶及熱解膠帶處理MEMS晶圓的各種製程。有利地,可以在矽晶圓的相對側上組合使用紫外線解膠帶和熱解膠帶,以從晶圓的第一側選擇性地移除第一載體基板,同時將第二載體基板保持在晶圓的相對側上。
在移除載體基板及晶圓接合帶後通常接續進行灰化步驟(例如,使用氧電漿),以從MEMS矽晶圓移除任何有機汙染物。對於具有成千上萬個噴墨噴嘴的MEMS噴墨裝置,汙染物尤其成問題。如果汙染物部分地阻塞了噴墨噴嘴或進入噴嘴腔並且沉積在噴墨致動器(例如電阻式加熱元件)上,則裝置的性能可能會受到損害,從而導致由受汙染的晶圓製成的列印頭產生不良的印刷假影。在一些實例中,晶圓汙染造成的印刷假影可能在數百萬次噴墨中被「燒掉」。然而,預燒期浪費了墨水,並且對於使用者或製造商而言是非常不希望有的。因此,在整個MEMS製造過程中最小化汙染物對於最大化晶圓產量以及MEMS製程產生的產品品質至關重要。
氧化灰化雖可有效移除矽晶圓上的有機汙染物,但不能移除無機汙染物。因此,期望提供一種MEMS晶圓處理方法,將受到無機汙染物汙染的風險最小化。特別期望確認無機汙染物的來源並且提供適合於MEMS噴墨列印頭製造的晶圓處理方法,其可減輕任何無機汙染物的來源。
在第一態樣,提供一種處理MEMS晶圓的方法,包括以下步驟:
(i)將第一載體基板附接到MEMS晶圓的第一側,該第一載體基板藉由無聚矽氧的剝離帶與第一晶圓接合帶附接,該剝離帶接觸該MEMS晶圓的該第一側;
(ii)在該MEMS晶圓的相對的第二側上執行一或多個晶圓處理步驟;
(iii)藉由暴露於能源從該MEMS晶圓的該第一側釋放該第一載體基板,該能源選擇性地從該剝離帶釋放該第一晶圓接合帶;以及
(iv)將該剝離帶從該MEMS晶圓的該第一側剝離。
根據第一態樣的方法,藉由從無機粒子移除汙染源,有利提高MEMS晶圓的品質。本發明人已經確認某些晶圓接合帶是MEMS晶圓製造中無機粒子汙染的重要來源。特別地,晶圓接合帶通常含有以聚矽氧為基礎的黏著劑,該黏著劑在從MEMS晶圓上剝離後會留下黏著劑殘留物。常規藉由灰化氧化移除這種殘留物在移除有機組分方面是有效的,但是二氧化矽粒子(源自矽氧聚合物)不能藉由灰化方法移除,並且對MEMS裝置,特別是包含細微噴嘴的噴墨裝置具有有害作用。根據第一態樣的方法的優點在於,僅需對現有晶圓處理製程進行最少的更改,並且不需要限制新的晶圓接合帶。
在根據第一態樣的方法中,晶圓接合帶不直接接觸MEMS晶圓,而是藉由與MEMS晶圓接觸的剝離帶接合。以此方式,來自晶圓接合帶的任何黏著劑殘留物藉由用作障壁層的剝離帶與MEMS晶圓分離。在移除載體基板之後,可以簡單地將剝離帶從MEMS晶圓剝離開來,以在晶圓表面上留下最少的殘留物。此外,任何這樣的殘留物完全是有機殘留物,可以使用常規的氧化灰化方法將其乾淨地移除,而沒有被殘留的無機粒子汙染MEMS裝置的風險。
較佳地,MEMS晶圓包括MEMS噴墨裝置。
較佳地,MEMS晶圓的第一側具有複數個噴墨噴嘴。
較佳地,第一載體基板由玻璃組成。
典型地,第一晶圓接合帶包括矽。舉例而言,第一晶圓接合帶可以包括矽氧聚合物形式的矽。
在一些實施例中,第一晶圓接合帶是紫外線解膠帶(UV-release tape),且能源是紫外線光。在其他實施例中,第一晶圓接合帶是熱解膠帶(thermal-release tape),且能源是熱量。
較佳地,晶圓處理步驟選自於由以下所組成的群組:晶圓研磨、蝕刻以及氧化灰化。
較佳地,此方法更包括在步驟(iii)之前,將第二載體基板附接到晶圓的第二側的步驟。
較佳地,第二載體基板藉由不同於第一晶圓接合帶的第二晶圓接合帶附接。第一範例,第一及第二晶圓接合帶可選自於由以下所組成的群組:紫外線解膠帶以及熱解膠帶。
較佳地,此方法更包括在步驟(iv)之後,氧化地灰化MEMS晶圓的第一側的步驟。
在第二態樣中,提供一種用於MEMS製造方法的晶圓組件,晶圓組件包括:
MEMS晶圓,具有第一側及相對的第二側;
剝離帶可釋放地附接到晶圓的第一側,剝離帶沒有任何矽;
可釋放地附接到剝離帶的第一晶圓接合帶;以及
第一載體基板,附接到第一晶圓接合帶。
較佳地,第一晶圓接合帶含有矽。
較佳地,晶圓組件更包括:
可釋放地附接在晶圓的第二側的第二晶圓接合帶;以及
第二載體基板附接到第二晶圓接合帶。
較佳地,第二晶圓接合帶不同於第一晶圓接合帶。
圖1至圖6示意性地示出根據第一態樣的用於處理MEMS晶圓的示例性方法。在圖1中,示出包括塊狀矽基板3及前側MEMS層5的MEMS晶圓1。MEMS層5可以包括例如複數個MEMS噴墨裝置,設置在積體電路上,並且噴嘴(圖未示)限定在MEMS晶圓1的前側表面6中。在US 9,044,945、US 8,608,286、US 7,246,886及US 6,755,509中描述了包括噴墨裝置的MEMS層的範例以及相應的製造方法,其各自的內容透過引用併入本文。
圖2示出在例如玻璃處理晶圓的第一載體基板7附接到MEMS晶圓1的前側表面6之後的晶圓組件10。第一載體基板7藉由紫外線解膠帶(UV-release tape)11及單獨的剝離帶13附接到前側表面6。剝離帶13與前側表面6接觸,同時紫外線解膠帶11被夾置在剝離帶與第一載體基板7之間。
晶圓組件10可以以任何順序組裝。舉例而言,剝離帶13可以被接合到MEMS晶圓1的前側表面6,紫外線解膠帶11被接合到剝離帶,然後第一載體基板7被接合到紫外線解膠帶。替代地,可以將紫外線解膠帶11接合到第一載體基板7,將剝離帶13接合到紫外線解膠帶,然後將剝離帶13接合到MEMS晶圓的前側表面6。替代地,可以將剝離帶13接合到MEMS晶圓1的前側表面6,將紫外線解膠帶11接合到第一載體基板,然後將紫外線解膠帶接合到剝離帶,從而結合MEMS晶圓與第一載體基板。
紫外線解膠帶是本技術領域中具有通常知識者所周知的,並且可以從例如Kingzom Electronic Technology Co Ltd、Nitto Denko Corporation及Furakawa Electric Group的供應商處購得。典型地,紫外線解膠帶包括至少一層設置在基膜上的紫外線可固化黏著劑,由此紫外線可固化黏著劑在暴露於紫外線下會失去其黏著性能。在所示的實施例中,紫外線可固化帶11包括設置在基膜的相對側上的兩層UV可固化黏著劑,由此黏著劑的上層可藉由第一載體基板7暴露於紫外線光而選擇性地可固化。典型地,紫外線解膠帶含有有機矽氧聚合物形式的矽。
剝離帶同樣是本技術領域中具有通常知識者已知的。選擇根據本發明的剝離帶13以便不存在任何矽。適用於本發明的合適的剝離帶的一個範例是可從Ultron Systems,Inc.獲得的Adhesive Plastic Film 1009R。
接著參考圖3,在附接第一載體基板7之後,對MEMS晶圓1的背側15進行MEMS處理步驟。第一載體基板7用作在背側MEMS處理期間用於保持MEMS晶圓1的手柄。舉例來說,可以對矽基板3的背側表面15進行晶圓減薄(例如,研磨及/或電漿減薄)、微影蝕刻(例如,對背側墨水供應通道的蝕刻)及氧化灰化。在這個階段,切割道的背側蝕刻(圖未示)對於將MEMS晶圓1分割(或“切割”)成附接到第一載體基板7的個別晶粒(或“晶片”)可能是有用的。在圖3中,示意性地示出與例如在US 7,441,865中描述的墨水供應通道相對應的背側墨水供應通道17,其內容通過引用併入本文。
在對MEMS晶圓1進行背側處理之後,接著參考圖4,使用熱解膠帶(thermal-release tape)22將第二載體基板20(例如,玻璃處理晶圓)附接到矽基板3的背側15。在MEMS晶圓1的前側表面6及背側表面15上使用不同的晶圓接合帶有助於從前側選擇性地移除第一載體基板7,同時第二載體基板20保持附接在背側。熱解膠帶對於本技術領域中具有通常知識者而言是眾所周知的,例如可從Nitto Denko Corporation商購的RevalphaTM
帶。
在經由熱解膠帶22將MEMS晶圓1附接到第二載體基板20的情況下,晶圓的前側6暴露於紫外線輻射,這固化了紫外線解膠帶11中的黏著劑的上層並釋放第一載體基板7。圖5示出釋放第一載體基板7之後的晶圓組件。MEMS晶圓1由附接到背側的第二載體基板20保持,同時剝離帶13和固化的紫外線解膠帶11覆蓋前側上的MEMS層5。剝離帶13用作下方的MEMS層5的保護障壁,從而使包含在紫外線解膠帶11中的矽氧樹脂的任何汙染最小化。
參照圖6,最終將剝離帶13從MEMS層5剝離,同時移除附接在剝離帶上的紫外線解膠帶11,以露出前側表面6。在移除剝離帶13及紫外線解膠帶11之後,可以使用氧化灰化(例如,氧電漿灰化)來清潔前側表面6上的任何有機殘留物,以及移除MEMS結構(例如噴墨噴嘴腔室)內的任何犧牲抗蝕劑。由於剝離帶13不存在任何矽,因此該灰化步驟提供了乾淨的前側表面6及不含任何二氧化矽粒子的MEMS裝置。舉例而言,如WO2008/141359中所述,可以使用熱釋放製程從第二載體基板20上取得個別晶粒。
根據前述內容,將理解到,本文描述的晶圓處理方法有利地提供了具有最小的無機汙染物(例如,二氧化矽粒子)的MEMS裝置。因此,此方法非常適合在製造具有對這些汙染物敏感的噴墨MEMS裝置的MEMS列印頭晶片期間處理MEMS晶圓。
當然,將理解,本發明僅藉由範例的方式描述,並且可以在由所附申請專利範圍限定的本發明的範圍內進行細節的修改。
1:MEMS晶圓
3:塊狀矽基板
5:MEMS層
6:前側表面
7:第一載體基板
10:晶圓組件
11:紫外線解膠帶
13:剝離帶
15:背側
17:背側墨水供應通道
20:第二載體基板
22:熱解膠帶
本文僅參考所附圖式以舉例的方式描述本發明的實施例,其中:
[圖1]是MEMS晶圓的示意性側視圖;
[圖2]示出MEMS晶圓,具有附接到第一載體基板的前側;
[圖3]示出背側MEMS處理之後的MEMS晶圓;
[圖4]示出MEMS晶圓,具有附接到第二載體基板的背側;
[圖5]示出從前側釋放第一載體基板之後的MEMS晶圓;以及
[圖6]示出從前側撕下剝離帶後的MEMS晶圓。
3:塊狀矽基板
5:MEMS層
7:第一載體基板
11:紫外線解膠帶
13:剝離帶
15:背側
17:背側墨水供應通道
Claims (20)
- 一種處理MEMS晶圓的方法,包括以下步驟: (i)將第一載體基板附接到MEMS晶圓的第一側,該第一載體基板藉由無聚矽氧的剝離帶與第一晶圓接合帶附接,該剝離帶接觸該MEMS晶圓的該第一側; (ii)在該MEMS晶圓的相對的第二側上執行一或多個晶圓處理步驟; (iii)藉由暴露於能源從該MEMS晶圓的該第一側釋放該第一載體基板,該能源選擇性地從該剝離帶釋放該第一晶圓接合帶;以及 (iv)將該剝離帶從該MEMS晶圓的該第一側剝離。
- 如請求項1之方法,其中,該MEMS晶圓包括MEMS噴墨裝置。
- 如請求項1之方法,其中,該MEMS晶圓的該第一側具有複數個噴墨噴嘴。
- 如請求項1之方法,其中,該第一載體基板由玻璃組成。
- 如請求項1之方法,其中,該第一晶圓接合帶包括矽。
- 如請求項1之方法,其中,該第一晶圓接合帶是紫外線解膠帶,且該能源是紫外線光。
- 如請求項1之方法,其中,該第一晶圓接合帶是熱解膠帶,且該能源是熱量。
- 如請求項1之方法,其中,該晶圓處理步驟選自於由以下所組成的群組:晶圓研磨、蝕刻以及氧化灰化。
- 如請求項1之方法,更包括在步驟(iii)之前,將第二載體基板附接到該晶圓的該第二側的步驟。
- 如請求項9之方法,其中,該第二載體基板藉由不同於該第一晶圓接合帶的第二晶圓接合帶附接。
- 如請求項10之方法,其中,該第一晶圓接合帶及該第二晶圓接合帶選自於由以下所組成的群組:紫外線解膠帶以及熱解膠帶。
- 如請求項1之方法,更包括在步驟(iv)之後,氧化地灰化該MEMS晶圓的該第一側的步驟。
- 如請求項1之方法,其中,在步驟(iv)中,剝離該剝離帶的同時移除附接在該剝離帶的該第一晶圓接合帶。
- 一種用於MEMS製造方法的晶圓組件,該晶圓組件包括: MEMS晶圓,具有第一側及相對的第二側; 無聚矽氧的剝離帶可釋放地附接到該晶圓的該第一側; 附接到該剝離帶的第一晶圓接合帶;以及 第一載體基板,可釋放地附接到該第一晶圓接合帶。
- 如請求項14之晶圓組件,其中,該第一晶圓接合帶含有矽。
- 如請求項14之晶圓組件,其中,該MEMS晶圓包括MEMS噴墨裝置。
- 如請求項14之晶圓組件,其中,該MEMS晶圓的該第一側具有複數個噴墨噴嘴。
- 如請求項14之晶圓組件,更包括: 附接到該晶圓的該第二側的第二晶圓接合帶;以及 第二載體基板,可釋放地附接到該第二晶圓接合帶。
- 如請求項18之晶圓組件,其中,該第二晶圓接合帶不同於該第一晶圓接合帶。
- 如請求項18之晶圓組件,其中,該第一晶圓接合帶及該第二晶圓接合帶選自於由以下所組成的群組:紫外線解膠帶以及熱解膠帶。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962856627P | 2019-06-03 | 2019-06-03 | |
US62/856,627 | 2019-06-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202114873A true TW202114873A (zh) | 2021-04-16 |
Family
ID=70681853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109113164A TW202114873A (zh) | 2019-06-03 | 2020-04-20 | 處理mems晶圓的方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US11355383B2 (zh) |
EP (1) | EP3956143B1 (zh) |
CN (1) | CN113905891B (zh) |
AU (1) | AU2020287207B2 (zh) |
SG (1) | SG11202112521YA (zh) |
TW (1) | TW202114873A (zh) |
WO (1) | WO2020244890A1 (zh) |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19628341C2 (de) * | 1996-07-13 | 1998-09-17 | Sihl Gmbh | Aufzeichnungsmaterial für Tintenstrahlverfahren mit wäßriger Tinte und Verwendung zum Herstellen wasserfester und lichtbeständiger Aufzeichnungen auf diesem Material |
US6235387B1 (en) * | 1998-03-30 | 2001-05-22 | 3M Innovative Properties Company | Semiconductor wafer processing tapes |
US6425971B1 (en) | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
US6755509B2 (en) | 2002-11-23 | 2004-06-29 | Silverbrook Research Pty Ltd | Thermal ink jet printhead with suspended beam heater |
US7441865B2 (en) | 2004-01-21 | 2008-10-28 | Silverbrook Research Pty Ltd | Printhead chip having longitudinal ink supply channels |
JP4638499B2 (ja) * | 2004-10-08 | 2011-02-23 | シルバーブルック リサーチ ピーティワイ リミテッド | インクジェットプリンタヘッド集積回路を製造する方法 |
US7605009B2 (en) * | 2007-03-12 | 2009-10-20 | Silverbrook Research Pty Ltd | Method of fabrication MEMS integrated circuits |
US20080283190A1 (en) | 2007-05-20 | 2008-11-20 | Silverbrook Research Pty Ltd | Method of removing mems devices from a handle substrate |
US7866795B2 (en) | 2007-06-15 | 2011-01-11 | Silverbrook Research Pty Ltd | Method of forming connection between electrode and actuator in an inkjet nozzle assembly |
US7678667B2 (en) * | 2007-06-20 | 2010-03-16 | Silverbrook Research Pty Ltd | Method of bonding MEMS integrated circuits |
US8012363B2 (en) * | 2007-11-29 | 2011-09-06 | Silverbrook Research Pty Ltd | Metal film protection during printhead fabrication with minimum number of MEMS processing steps |
EP2237960B1 (en) | 2008-01-16 | 2012-09-26 | Silverbrook Research Pty. Ltd | Printhead cartridge with two fluid couplings |
US8783686B2 (en) | 2010-05-17 | 2014-07-22 | Memjet Technology Ltd. | Printer having media clearance mechanism |
US8556393B2 (en) | 2010-05-17 | 2013-10-15 | Zamtec Ltd | Simple printhead coupling for fluid distribution |
US8557679B2 (en) * | 2010-06-30 | 2013-10-15 | Corning Incorporated | Oxygen plasma conversion process for preparing a surface for bonding |
JP2012206869A (ja) * | 2011-03-29 | 2012-10-25 | Seiko Instruments Inc | ガラス体の切断方法、パッケージの製造方法、パッケージ、圧電振動子、発振器、電子機器及び電波時計 |
JP2012256846A (ja) * | 2011-05-16 | 2012-12-27 | Elpida Memory Inc | 半導体装置の製造方法 |
US8632162B2 (en) * | 2012-04-24 | 2014-01-21 | Eastman Kodak Company | Nozzle plate including permanently bonded fluid channel |
US9044945B2 (en) | 2013-07-30 | 2015-06-02 | Memjet Technology Ltd. | Inkjet nozzle device having high degree of symmetry |
US9899285B2 (en) * | 2015-07-30 | 2018-02-20 | Semtech Corporation | Semiconductor device and method of forming small Z semiconductor package |
KR102042538B1 (ko) * | 2015-11-09 | 2019-11-08 | 후루카와 덴키 고교 가부시키가이샤 | 마스크 일체형 표면 보호 테이프 |
US11456268B2 (en) * | 2019-01-21 | 2022-09-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package and manufacturing method thereof |
-
2020
- 2020-04-20 TW TW109113164A patent/TW202114873A/zh unknown
- 2020-05-11 WO PCT/EP2020/063071 patent/WO2020244890A1/en unknown
- 2020-05-11 SG SG11202112521YA patent/SG11202112521YA/en unknown
- 2020-05-11 CN CN202080040917.8A patent/CN113905891B/zh active Active
- 2020-05-11 AU AU2020287207A patent/AU2020287207B2/en active Active
- 2020-05-11 EP EP20725521.7A patent/EP3956143B1/en active Active
- 2020-06-01 US US16/889,734 patent/US11355383B2/en active Active
-
2022
- 2022-05-09 US US17/739,937 patent/US11823943B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
AU2020287207A1 (en) | 2021-12-16 |
CN113905891B (zh) | 2023-05-09 |
US20200381284A1 (en) | 2020-12-03 |
EP3956143B1 (en) | 2022-10-12 |
WO2020244890A1 (en) | 2020-12-10 |
US20220285201A1 (en) | 2022-09-08 |
AU2020287207B2 (en) | 2023-03-16 |
SG11202112521YA (en) | 2021-12-30 |
US11355383B2 (en) | 2022-06-07 |
EP3956143A1 (en) | 2022-02-23 |
CN113905891A (zh) | 2022-01-07 |
US11823943B2 (en) | 2023-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100413092C (zh) | 薄膜器件的供给体及其制造方法、转印方法 | |
US9034467B2 (en) | Reticle chuck cleaner | |
US7659147B2 (en) | Method for cutting solid-state image pickup device | |
US20090325467A1 (en) | Method of Thinning Wafer and Support plate | |
TW201230141A (en) | Glass wafers for semiconductor fabrication processes and methods of making same | |
US20140226136A1 (en) | Method and apparatus for cleaning photomask handling surfaces | |
TWI736101B (zh) | 具有反射式光罩的光罩組件及反射式光罩的製造方法 | |
EP1372192B1 (en) | Method of manufacturing micro-semiconductor element | |
JPH09330940A (ja) | 半導体装置の製造方法 | |
JP5473316B2 (ja) | 基板保持具及び半導体ウェーハの加工方法 | |
TW202114873A (zh) | 處理mems晶圓的方法 | |
US10962878B2 (en) | Approach for ultra thin-film transfer and handling | |
US10262853B2 (en) | Removing particulate contaminants from the backside of a wafer or reticle | |
JP2020053472A (ja) | 素子チップの製造方法 | |
JP6303399B2 (ja) | Euv露光装置 | |
CN110517987B (zh) | 晶片的加工方法 | |
JP2009283806A (ja) | 半導体装置の製造方法 | |
JP2008091612A (ja) | 表示装置の製造方法 | |
KR20200088072A (ko) | 전기광학소자의 제조 방법 | |
JP2009026974A (ja) | 半導体ウエハの研磨方法 |