JP4932075B2 - 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 - Google Patents

低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 Download PDF

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JP4932075B2
JP4932075B2 JP2000306813A JP2000306813A JP4932075B2 JP 4932075 B2 JP4932075 B2 JP 4932075B2 JP 2000306813 A JP2000306813 A JP 2000306813A JP 2000306813 A JP2000306813 A JP 2000306813A JP 4932075 B2 JP4932075 B2 JP 4932075B2
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dielectric
metal conductor
region
workpiece
plasma
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JP2001203194A5 (enExample
JP2001203194A (ja
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エム コーエン バーニー
レンガラジャン スラジ
キング タイ ンガン ケニー
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2000306813A 1999-09-02 2000-09-01 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 Expired - Lifetime JP4932075B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/388,991 US6346489B1 (en) 1999-09-02 1999-09-02 Precleaning process for metal plug that minimizes damage to low-κ dielectric
US09/388991 1999-09-02

Publications (3)

Publication Number Publication Date
JP2001203194A JP2001203194A (ja) 2001-07-27
JP2001203194A5 JP2001203194A5 (enExample) 2007-10-25
JP4932075B2 true JP4932075B2 (ja) 2012-05-16

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JP2000306813A Expired - Lifetime JP4932075B2 (ja) 1999-09-02 2000-09-01 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法

Country Status (6)

Country Link
US (2) US6346489B1 (enExample)
EP (1) EP1081750A3 (enExample)
JP (1) JP4932075B2 (enExample)
KR (1) KR20010050283A (enExample)
SG (1) SG93261A1 (enExample)
TW (1) TW473846B (enExample)

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Also Published As

Publication number Publication date
EP1081750A3 (en) 2003-02-05
US6589890B2 (en) 2003-07-08
US6346489B1 (en) 2002-02-12
US20020106908A1 (en) 2002-08-08
TW473846B (en) 2002-01-21
SG93261A1 (en) 2002-12-17
EP1081750A2 (en) 2001-03-07
KR20010050283A (ko) 2001-06-15
JP2001203194A (ja) 2001-07-27

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