JP4926468B2 - 静電破壊保護回路及びこれを備えた半導体集積回路装置 - Google Patents

静電破壊保護回路及びこれを備えた半導体集積回路装置 Download PDF

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Publication number
JP4926468B2
JP4926468B2 JP2005353163A JP2005353163A JP4926468B2 JP 4926468 B2 JP4926468 B2 JP 4926468B2 JP 2005353163 A JP2005353163 A JP 2005353163A JP 2005353163 A JP2005353163 A JP 2005353163A JP 4926468 B2 JP4926468 B2 JP 4926468B2
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JP
Japan
Prior art keywords
output transistor
transistor
electrostatic breakdown
protection circuit
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005353163A
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English (en)
Japanese (ja)
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JP2007158154A (ja
Inventor
正典 土橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2005353163A priority Critical patent/JP4926468B2/ja
Priority to CN2006800156757A priority patent/CN101171680B/zh
Priority to US11/912,412 priority patent/US7859805B2/en
Priority to KR1020077026346A priority patent/KR101236088B1/ko
Priority to PCT/JP2006/324193 priority patent/WO2007066626A1/ja
Priority to TW095145688A priority patent/TW200746926A/zh
Publication of JP2007158154A publication Critical patent/JP2007158154A/ja
Application granted granted Critical
Publication of JP4926468B2 publication Critical patent/JP4926468B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
JP2005353163A 2005-12-07 2005-12-07 静電破壊保護回路及びこれを備えた半導体集積回路装置 Expired - Fee Related JP4926468B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005353163A JP4926468B2 (ja) 2005-12-07 2005-12-07 静電破壊保護回路及びこれを備えた半導体集積回路装置
CN2006800156757A CN101171680B (zh) 2005-12-07 2006-12-05 静电击穿保护电路及半导体集成电路设备
US11/912,412 US7859805B2 (en) 2005-12-07 2006-12-05 Electrostatic breakdown protection circuit and semiconductor integrated circuit device therewith
KR1020077026346A KR101236088B1 (ko) 2005-12-07 2006-12-05 정전 파괴 보호 회로 및 이를 포함한 반도체 집적 회로장치
PCT/JP2006/324193 WO2007066626A1 (ja) 2005-12-07 2006-12-05 静電破壊保護回路及びこれを備えた半導体集積回路装置
TW095145688A TW200746926A (en) 2005-12-07 2006-12-07 Electrostatic breakdown protection circuit and semiconductor integrated circuit device fabricated therewith

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005353163A JP4926468B2 (ja) 2005-12-07 2005-12-07 静電破壊保護回路及びこれを備えた半導体集積回路装置

Publications (2)

Publication Number Publication Date
JP2007158154A JP2007158154A (ja) 2007-06-21
JP4926468B2 true JP4926468B2 (ja) 2012-05-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005353163A Expired - Fee Related JP4926468B2 (ja) 2005-12-07 2005-12-07 静電破壊保護回路及びこれを備えた半導体集積回路装置

Country Status (6)

Country Link
US (1) US7859805B2 (enExample)
JP (1) JP4926468B2 (enExample)
KR (1) KR101236088B1 (enExample)
CN (1) CN101171680B (enExample)
TW (1) TW200746926A (enExample)
WO (1) WO2007066626A1 (enExample)

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FR2921773B1 (fr) * 2007-10-02 2011-04-22 Thales Sa Circuit de protection pour mosfet
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8553380B2 (en) * 2010-07-08 2013-10-08 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US9508487B2 (en) * 2011-10-21 2016-11-29 Qualcomm Incorporated Systems and methods for limiting voltage in wireless power receivers
CN103281059A (zh) * 2013-06-14 2013-09-04 成都锐奕信息技术有限公司 防过热开关电路
JP6170807B2 (ja) * 2013-10-21 2017-07-26 アスモ株式会社 モータ制御装置
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
CN105844898A (zh) * 2016-04-11 2016-08-10 深圳市励创微电子有限公司 红外发射芯片、内部电路及其应用电路
TWI729538B (zh) * 2018-11-21 2021-06-01 大陸商上海瀚薪科技有限公司 一種整合箝制電壓箝位電路的碳化矽半導體元件
CN109950885B (zh) * 2019-03-13 2021-01-08 惠科股份有限公司 一种显示面板的静电防护装置、方法及显示装置

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Also Published As

Publication number Publication date
KR20080071894A (ko) 2008-08-05
CN101171680B (zh) 2010-10-13
KR101236088B1 (ko) 2013-02-21
TW200746926A (en) 2007-12-16
CN101171680A (zh) 2008-04-30
US7859805B2 (en) 2010-12-28
TWI337834B (enExample) 2011-02-21
US20090080128A1 (en) 2009-03-26
WO2007066626A1 (ja) 2007-06-14
JP2007158154A (ja) 2007-06-21

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