CN101171680B - 静电击穿保护电路及半导体集成电路设备 - Google Patents

静电击穿保护电路及半导体集成电路设备 Download PDF

Info

Publication number
CN101171680B
CN101171680B CN2006800156757A CN200680015675A CN101171680B CN 101171680 B CN101171680 B CN 101171680B CN 2006800156757 A CN2006800156757 A CN 2006800156757A CN 200680015675 A CN200680015675 A CN 200680015675A CN 101171680 B CN101171680 B CN 101171680B
Authority
CN
China
Prior art keywords
transistor
electrostatic breakdown
output transistor
protective circuit
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800156757A
Other languages
English (en)
Chinese (zh)
Other versions
CN101171680A (zh
Inventor
土桥正典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN101171680A publication Critical patent/CN101171680A/zh
Application granted granted Critical
Publication of CN101171680B publication Critical patent/CN101171680B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
CN2006800156757A 2005-12-07 2006-12-05 静电击穿保护电路及半导体集成电路设备 Expired - Fee Related CN101171680B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005353163A JP4926468B2 (ja) 2005-12-07 2005-12-07 静電破壊保護回路及びこれを備えた半導体集積回路装置
JP353163/2005 2005-12-07
PCT/JP2006/324193 WO2007066626A1 (ja) 2005-12-07 2006-12-05 静電破壊保護回路及びこれを備えた半導体集積回路装置

Publications (2)

Publication Number Publication Date
CN101171680A CN101171680A (zh) 2008-04-30
CN101171680B true CN101171680B (zh) 2010-10-13

Family

ID=38122772

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800156757A Expired - Fee Related CN101171680B (zh) 2005-12-07 2006-12-05 静电击穿保护电路及半导体集成电路设备

Country Status (6)

Country Link
US (1) US7859805B2 (enExample)
JP (1) JP4926468B2 (enExample)
KR (1) KR101236088B1 (enExample)
CN (1) CN101171680B (enExample)
TW (1) TW200746926A (enExample)
WO (1) WO2007066626A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4866672B2 (ja) * 2006-07-27 2012-02-01 ルネサスエレクトロニクス株式会社 負荷駆動回路
FR2921773B1 (fr) * 2007-10-02 2011-04-22 Thales Sa Circuit de protection pour mosfet
US9520486B2 (en) 2009-11-04 2016-12-13 Analog Devices, Inc. Electrostatic protection device
US8553380B2 (en) * 2010-07-08 2013-10-08 Analog Devices, Inc. Apparatus and method for electronic circuit protection
US9508487B2 (en) * 2011-10-21 2016-11-29 Qualcomm Incorporated Systems and methods for limiting voltage in wireless power receivers
CN103281059A (zh) * 2013-06-14 2013-09-04 成都锐奕信息技术有限公司 防过热开关电路
JP6170807B2 (ja) * 2013-10-21 2017-07-26 アスモ株式会社 モータ制御装置
US10181719B2 (en) 2015-03-16 2019-01-15 Analog Devices Global Overvoltage blocking protection device
CN105844898A (zh) * 2016-04-11 2016-08-10 深圳市励创微电子有限公司 红外发射芯片、内部电路及其应用电路
TWI729538B (zh) * 2018-11-21 2021-06-01 大陸商上海瀚薪科技有限公司 一種整合箝制電壓箝位電路的碳化矽半導體元件
CN109950885B (zh) * 2019-03-13 2021-01-08 惠科股份有限公司 一种显示面板的静电防护装置、方法及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1399386A (zh) * 2001-07-27 2003-02-26 旺宏电子股份有限公司 静电放电保护电路
CN1492505A (zh) * 2002-10-25 2004-04-28 联发科技股份有限公司 静电放电保护电路

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4418291A (en) * 1980-05-28 1983-11-29 Raytheon Company Logic gate having an isolation FET and noise immunity circuit
JPH0714144B2 (ja) 1989-04-17 1995-02-15 ローム株式会社 集積回路の出力回路
JPH05327456A (ja) * 1992-05-20 1993-12-10 Fujitsu Ltd 半導体集積回路装置
US5644460A (en) 1994-01-21 1997-07-01 National Semiconductor Corporation Multi-rail electrostatic discharge protection device
JP3588953B2 (ja) * 1997-02-03 2004-11-17 富士通株式会社 半導体集積回路装置
US6147538A (en) 1997-02-05 2000-11-14 Texas Instruments Incorporated CMOS triggered NMOS ESD protection circuit
JPH1154711A (ja) * 1997-08-04 1999-02-26 Nippon Precision Circuits Kk 半導体装置の静電保護回路
TW399337B (en) 1998-06-09 2000-07-21 Koninkl Philips Electronics Nv Semiconductor device
US5946177A (en) * 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
JP3244065B2 (ja) 1998-10-23 2002-01-07 日本電気株式会社 半導体静電保護素子及びその製造方法
US6353520B1 (en) * 1999-06-03 2002-03-05 Texas Instruments Incorporated Shared 5 volt tolerant ESD protection circuit for low voltage CMOS process
JP2001358297A (ja) * 2000-06-14 2001-12-26 Nec Corp 静電保護回路
JP3678208B2 (ja) * 2002-04-19 2005-08-03 株式会社デンソー 負荷駆動用半導体装置
US7313116B2 (en) * 2002-05-13 2007-12-25 Samsung Electronics Co., Ltd. Method of performing inter-RAT measurement for a handover from NB-TDD to GSM
US7535846B2 (en) * 2002-05-21 2009-05-19 Samsung Electronics Co., Ltd Method for handling inter-RAT measurement and report in a dual-mode user equipment
US20050277416A1 (en) * 2002-09-10 2005-12-15 Nokia Corporation Measurements in communications systems
US6978138B2 (en) * 2002-10-28 2005-12-20 Qualcomm Incorporated Inter-RAT cell reselection in a wireless communication network
TWI220312B (en) 2003-07-16 2004-08-11 Mediatek Inc Electrostatic discharge protection circuit
ES2304496T3 (es) * 2003-07-31 2008-10-16 Nokia Siemens Networks Gmbh Procedimiento de gestion de recursos de radio comun en una red telefonica celular multi-rat.
JP4317221B2 (ja) * 2003-08-22 2009-08-19 サムスン エレクトロニクス カンパニー リミテッド マルチメディアブロードキャスト／マルチキャストサービス（ｍｂｍｓ）を提供する移動通信システムにおけるパケットデータを受信するためのセル再選択方法
KR100532463B1 (ko) * 2003-08-27 2005-12-01 삼성전자주식회사 정전기 보호 소자와 파워 클램프로 구성된 입출력 정전기방전 보호 셀을 구비하는 집적 회로 장치
KR101042803B1 (ko) * 2003-11-06 2011-06-20 삼성전자주식회사 이동통신시스템에서 방송 서비스를 위한 호출 방법
KR101114175B1 (ko) * 2004-02-13 2012-02-22 엘지전자 주식회사 이동통신 시스템에서 점대점 서비스의 송수신방법
TWI241010B (en) 2004-03-12 2005-10-01 Admtek Inc Electrostatic discharge clamping circuit for interface circuit of the mixed voltage source
WO2005094522A2 (en) * 2004-03-23 2005-10-13 Sarnoff Corporation Method and apparatus for protecting a gate oxide using source/bulk pumping
US7027276B2 (en) 2004-04-21 2006-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. High voltage ESD protection circuit with low voltage transistors
KR20060041673A (ko) * 2004-08-16 2006-05-12 엘지전자 주식회사 방송 및 멀티캐스트(ｍｂｍｓ) 서비스를 위한 무선 통신시스템 및 방법
KR101128231B1 (ko) * 2004-08-19 2012-03-26 엘지전자 주식회사 방송 및 멀티캐스트(ｍｂｍｓ) 서비스를 위한 단말 분포 제어방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1399386A (zh) * 2001-07-27 2003-02-26 旺宏电子股份有限公司 静电放电保护电路
CN1492505A (zh) * 2002-10-25 2004-04-28 联发科技股份有限公司 静电放电保护电路

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP平10-224201A 1998.08.21
JP平11-54711A 1999.02.26
JP平5-327456A 1993.12.10

Also Published As

Publication number Publication date
KR20080071894A (ko) 2008-08-05
JP4926468B2 (ja) 2012-05-09
KR101236088B1 (ko) 2013-02-21
TW200746926A (en) 2007-12-16
CN101171680A (zh) 2008-04-30
US7859805B2 (en) 2010-12-28
TWI337834B (enExample) 2011-02-21
US20090080128A1 (en) 2009-03-26
WO2007066626A1 (ja) 2007-06-14
JP2007158154A (ja) 2007-06-21

Similar Documents

Publication Publication Date Title
US8830641B2 (en) Electrostatic discharge protection for high voltage domains
CN104467370B (zh) 用于隔离的驱动器的软关闭的设备和方法
JP6603287B2 (ja) 構成可能なクランプ回路
EP2071724B1 (en) Power supply control circuit
US7212036B2 (en) Driving apparatus of H bridge circuit and protection method of the same
US8427798B2 (en) Semiconductor integrated circuit device
CN101171680B (zh) 静电击穿保护电路及半导体集成电路设备
CN104241269A (zh) 静电保护电路
US12218655B2 (en) Wide voltage gate driver using low gate oxide transistors
CN112425074A (zh) 开关电路以及电力转换装置
JP2005295753A (ja) 端子保護回路および同期整流型のスイッチング電源
CN105575960B (zh) 用于芯片上静电放电保护方案的方法及电路
CN113141170A (zh) 驱动装置
JP2004222119A (ja) 半導体集積回路
TWI500230B (zh) ESD protection circuit
CN110311667A (zh) 一种带端口电压保护电路的端口电路
JP4821394B2 (ja) 半導体素子駆動回路
CN108462427A (zh) 风扇驱动电路
CN111682745B (zh) 驱动控制装置、驱动电路以及移动体
CN101213652A (zh) 半导体集成电路装置
KR20250073665A (ko) 반도체 장치
KR100443512B1 (ko) 정전기 보호 회로
JP5098765B2 (ja) 過電圧保護回路
JP2025073391A (ja) スイッチ回路
CN112913128A (zh) 半导体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20101013

Termination date: 20191205