JP4926321B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4926321B2 JP4926321B2 JP2001016314A JP2001016314A JP4926321B2 JP 4926321 B2 JP4926321 B2 JP 4926321B2 JP 2001016314 A JP2001016314 A JP 2001016314A JP 2001016314 A JP2001016314 A JP 2001016314A JP 4926321 B2 JP4926321 B2 JP 4926321B2
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- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
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- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001016314A JP4926321B2 (ja) | 2001-01-24 | 2001-01-24 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001016314A JP4926321B2 (ja) | 2001-01-24 | 2001-01-24 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011224506A Division JP5520911B2 (ja) | 2011-10-12 | 2011-10-12 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002222955A JP2002222955A (ja) | 2002-08-09 |
| JP2002222955A5 JP2002222955A5 (https=) | 2007-12-06 |
| JP4926321B2 true JP4926321B2 (ja) | 2012-05-09 |
Family
ID=18882712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001016314A Expired - Fee Related JP4926321B2 (ja) | 2001-01-24 | 2001-01-24 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4926321B2 (https=) |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3190520B2 (ja) * | 1994-06-14 | 2001-07-23 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP3522381B2 (ja) * | 1995-03-01 | 2004-04-26 | 株式会社半導体エネルギー研究所 | 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法 |
| JP3539821B2 (ja) * | 1995-03-27 | 2004-07-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH1079511A (ja) * | 1996-09-04 | 1998-03-24 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製法 |
| JP3844566B2 (ja) * | 1997-07-30 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH1187724A (ja) * | 1997-09-11 | 1999-03-30 | Matsushita Electric Ind Co Ltd | 半導体素子の製造方法 |
| JP2000133594A (ja) * | 1998-08-18 | 2000-05-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000068518A (ja) * | 1998-08-26 | 2000-03-03 | Sony Corp | 薄膜トランジスタの製造方法 |
| JP4536186B2 (ja) * | 1998-11-16 | 2010-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4159713B2 (ja) * | 1998-11-25 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2001
- 2001-01-24 JP JP2001016314A patent/JP4926321B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002222955A (ja) | 2002-08-09 |
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