JP4917253B2 - 分布型低域フィルタ伝送線回路装置 - Google Patents
分布型低域フィルタ伝送線回路装置 Download PDFInfo
- Publication number
- JP4917253B2 JP4917253B2 JP2004220019A JP2004220019A JP4917253B2 JP 4917253 B2 JP4917253 B2 JP 4917253B2 JP 2004220019 A JP2004220019 A JP 2004220019A JP 2004220019 A JP2004220019 A JP 2004220019A JP 4917253 B2 JP4917253 B2 JP 4917253B2
- Authority
- JP
- Japan
- Prior art keywords
- transmission line
- target
- input
- pass filter
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005540 biological transmission Effects 0.000 title claims description 86
- 230000003287 optical effect Effects 0.000 claims description 67
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 10
- 238000005253 cladding Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0344—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect controlled by a high-frequency electromagnetic wave component in an electric waveguide
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/127—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode travelling wave
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/642,931 US7031558B2 (en) | 2003-08-18 | 2003-08-18 | Low-pass filter transmission line with integral electroabsorption modulator |
| US10/642931 | 2003-08-18 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005062855A JP2005062855A (ja) | 2005-03-10 |
| JP2005062855A5 JP2005062855A5 (https=) | 2007-07-12 |
| JP4917253B2 true JP4917253B2 (ja) | 2012-04-18 |
Family
ID=34063449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004220019A Expired - Fee Related JP4917253B2 (ja) | 2003-08-18 | 2004-07-28 | 分布型低域フィルタ伝送線回路装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7031558B2 (https=) |
| EP (1) | EP1508831A1 (https=) |
| JP (1) | JP4917253B2 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7471751B2 (en) * | 2004-06-17 | 2008-12-30 | Vitesse Semiconductor Corporation | Power and area efficient adaptive equalization |
| CN100391067C (zh) * | 2005-08-18 | 2008-05-28 | 中国科学院半导体研究所 | 用于电吸收调制半导体激光器高频封装的热沉 |
| US7899277B2 (en) * | 2008-05-28 | 2011-03-01 | Jds Uniphase Corporation | Integrated on-chip inductors and capacitors for improved performance of an optical modulator |
| JP5381074B2 (ja) | 2008-12-16 | 2014-01-08 | 三菱電機株式会社 | 光変調装置および光変調装置の製造方法 |
| JP2012078759A (ja) * | 2010-10-06 | 2012-04-19 | Mitsubishi Electric Corp | 光変調器 |
| JP2013015670A (ja) * | 2011-07-04 | 2013-01-24 | Sumitomo Electric Device Innovations Inc | 光変調装置 |
| EP2629141B1 (en) * | 2012-02-15 | 2019-04-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Electro-optic modulator and method of fabricating an electro-optic modulator |
| US8891341B1 (en) | 2013-03-11 | 2014-11-18 | Western Digital Technologies, Inc. | Energy assisted magnetic recording disk drive using modulated laser light |
| US9306672B2 (en) * | 2013-03-14 | 2016-04-05 | Encore Corporation | Method of fabricating and operating an optical modulator |
| US9064525B2 (en) | 2013-11-26 | 2015-06-23 | Western Digital Technologies, Inc. | Disk drive comprising laser transmission line optimized for heat assisted magnetic recording |
| JP6306936B2 (ja) * | 2014-05-13 | 2018-04-04 | 日本電信電話株式会社 | 光送信器及び光送信器の制御方法 |
| JP6459722B2 (ja) * | 2015-03-31 | 2019-01-30 | 住友大阪セメント株式会社 | 電気回路基板 |
| WO2018017962A1 (en) * | 2016-07-22 | 2018-01-25 | Skorpios Technologies, Inc. | On-chip high capacitance termination for transmitters |
| US20200076510A1 (en) | 2018-08-30 | 2020-03-05 | Oe Solutions America, Inc. | Method and apparatus for designing matching network for eam for eml tosa |
| US11422322B2 (en) * | 2019-07-12 | 2022-08-23 | Ayar Labs, Inc. | Hybrid multi-wavelength source and associated methods |
| CN110470952A (zh) * | 2019-08-19 | 2019-11-19 | 西安交通大学 | 直流配电网的故障检测方法 |
| CN113433758A (zh) * | 2020-03-23 | 2021-09-24 | 华星光通科技股份有限公司 | 增加电致吸收光调变器频宽的方法及其元件结构和制程 |
| US11469015B2 (en) | 2020-07-01 | 2022-10-11 | Smart Wires Inc. | Protection from and filtering of disturbances for serial connected facts |
| CN112202419B (zh) * | 2020-09-30 | 2023-12-08 | 大连海事大学 | 一种三频负群时延微波电路 |
| CN121752942A (zh) | 2023-08-17 | 2026-03-27 | 三菱电机株式会社 | 相位调整器以及半导体光集成元件 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4479100A (en) | 1982-05-27 | 1984-10-23 | Raytheon Company | Impedance matching network comprising selectable capacitance pads and selectable inductance strips or pads |
| US5208697A (en) | 1990-03-30 | 1993-05-04 | Hughes Aircraft Company | Microwave frequency range electro-optic modulator with efficient input coupling and smooth wideband frequency response |
| US5227623A (en) | 1992-01-31 | 1993-07-13 | Hewlett-Packard Company | Method and apparatus for measuring polarization mode dispersion in optical devices |
| US5291565A (en) | 1992-06-30 | 1994-03-01 | Hughes Aircraft Company | Broad band, low power electro-optic modulator apparatus and method with segmented electrodes |
| DE69528917T2 (de) | 1994-03-18 | 2004-10-28 | Fujitsu Ltd., Kawasaki | Steuerschaltung eines optischen Halbleitermodulators |
| DE4443630A1 (de) * | 1994-12-08 | 1996-06-13 | Sel Alcatel Ag | Optischer Modulatorschaltkreis |
| JP3438443B2 (ja) | 1995-11-10 | 2003-08-18 | Kddi株式会社 | 光デバイス |
| US5675673A (en) | 1996-03-29 | 1997-10-07 | Crystal Technology, Inc. | Integrated optic modulator with segmented electrodes and sloped waveguides |
| US5696855A (en) | 1996-03-29 | 1997-12-09 | Crystal Technologies, Inc. | Integrated optic modulator with reduced capacitance electrode configuration |
| US5671302A (en) | 1996-03-29 | 1997-09-23 | Crystal Technology, Inc. | Linearized optic modulator with segmented electrodes |
| US6057954A (en) * | 1998-09-18 | 2000-05-02 | Lucent Technologies Inc. | Asymmetric inductive peaking for optoelectronic devices |
| US6204924B1 (en) | 1999-02-23 | 2001-03-20 | Exfo Electro-Optical Engineering Inc. | Method and apparatus for measuring polarization mode dispersion of optical devices |
| GB2352085A (en) | 1999-07-15 | 2001-01-17 | Univ Bristol | Integrated semiconductor optical devices |
| KR100333482B1 (ko) | 1999-09-15 | 2002-04-25 | 오길록 | 초고속 반도체 광변조기 및 그 제조방법 |
| JP3583706B2 (ja) * | 2000-09-28 | 2004-11-04 | 株式会社東芝 | 高周波信号伝送用回路基板、その製造方法及びそれを用いた電子機器 |
| EP1207377A3 (en) | 2000-11-17 | 2007-03-28 | Agilent Technologies, Inc. | Method and apparatus for measuring optical properties by means of the Jones matrix |
| US6590691B1 (en) * | 2001-07-02 | 2003-07-08 | Phasebridge, Inc. | Hybridly integrated optical modulation devices |
| JP3885528B2 (ja) | 2001-07-04 | 2007-02-21 | 株式会社日立製作所 | 光変調器 |
| US6677830B2 (en) * | 2001-09-11 | 2004-01-13 | Triquint Technology Holding Co. | Broadband matching network for an electroabsorption optical modulator |
| GB0128903D0 (en) | 2001-12-03 | 2002-01-23 | Denselight Semiconductors Pte | A travelling-wave electoabsorption modular |
| JP3905367B2 (ja) * | 2001-12-11 | 2007-04-18 | 富士通株式会社 | 半導体光変調器、それを用いたマッハツェンダ型光変調器、及び半導体光変調器の製造方法 |
| US6862136B2 (en) * | 2002-01-31 | 2005-03-01 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
| JP3847668B2 (ja) * | 2002-06-13 | 2006-11-22 | 日本オプネクスト株式会社 | 進行波型光変調装置 |
-
2003
- 2003-08-18 US US10/642,931 patent/US7031558B2/en not_active Expired - Lifetime
-
2004
- 2004-05-06 EP EP04010855A patent/EP1508831A1/en not_active Ceased
- 2004-07-28 JP JP2004220019A patent/JP4917253B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050058385A1 (en) | 2005-03-17 |
| EP1508831A1 (en) | 2005-02-23 |
| JP2005062855A (ja) | 2005-03-10 |
| US7031558B2 (en) | 2006-04-18 |
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