JP4913603B2 - プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ - Google Patents

プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ Download PDF

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Publication number
JP4913603B2
JP4913603B2 JP2006545785A JP2006545785A JP4913603B2 JP 4913603 B2 JP4913603 B2 JP 4913603B2 JP 2006545785 A JP2006545785 A JP 2006545785A JP 2006545785 A JP2006545785 A JP 2006545785A JP 4913603 B2 JP4913603 B2 JP 4913603B2
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ring
assembly
substrate
plasma
lower ring
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JP2007515081A (ja
JP2007515081A5 (https=
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アンドレアス フィッシャー，
ピーター ローベンハルト，
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2006545785A 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ Expired - Lifetime JP4913603B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/736,666 2003-12-17
US10/736,666 US7244336B2 (en) 2003-12-17 2003-12-17 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
PCT/US2004/041768 WO2005059962A2 (en) 2003-12-17 2004-12-10 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Publications (3)

Publication Number Publication Date
JP2007515081A JP2007515081A (ja) 2007-06-07
JP2007515081A5 JP2007515081A5 (https=) 2008-02-07
JP4913603B2 true JP4913603B2 (ja) 2012-04-11

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JP2006545785A Expired - Lifetime JP4913603B2 (ja) 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ

Country Status (7)

Country Link
US (1) US7244336B2 (https=)
EP (1) EP1706898B1 (https=)
JP (1) JP4913603B2 (https=)
KR (1) KR101131022B1 (https=)
CN (1) CN100474521C (https=)
TW (1) TWI368274B (https=)
WO (1) WO2005059962A2 (https=)

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KR101131022B1 (ko) 2012-03-29
US20050133164A1 (en) 2005-06-23
WO2005059962A3 (en) 2006-02-23
CN1914712A (zh) 2007-02-14
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US7244336B2 (en) 2007-07-17
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KR20060127041A (ko) 2006-12-11
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