KR101131022B1 - 플라즈마 반응기 에칭 레이트 드리프트를 감소시키는 온도 제어 핫 에지 링 어셈블리 - Google Patents

플라즈마 반응기 에칭 레이트 드리프트를 감소시키는 온도 제어 핫 에지 링 어셈블리 Download PDF

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KR101131022B1
KR101131022B1 KR1020067014066A KR20067014066A KR101131022B1 KR 101131022 B1 KR101131022 B1 KR 101131022B1 KR 1020067014066 A KR1020067014066 A KR 1020067014066A KR 20067014066 A KR20067014066 A KR 20067014066A KR 101131022 B1 KR101131022 B1 KR 101131022B1
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ring
substrate
plasma
lower ring
bolt
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KR20060127041A (ko
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안드레아스 피셔
피터 로웬하트
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020067014066A 2003-12-17 2004-12-10 플라즈마 반응기 에칭 레이트 드리프트를 감소시키는 온도 제어 핫 에지 링 어셈블리 Expired - Lifetime KR101131022B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/736,666 2003-12-17
US10/736,666 US7244336B2 (en) 2003-12-17 2003-12-17 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
PCT/US2004/041768 WO2005059962A2 (en) 2003-12-17 2004-12-10 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Publications (2)

Publication Number Publication Date
KR20060127041A KR20060127041A (ko) 2006-12-11
KR101131022B1 true KR101131022B1 (ko) 2012-03-29

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KR1020067014066A Expired - Lifetime KR101131022B1 (ko) 2003-12-17 2004-12-10 플라즈마 반응기 에칭 레이트 드리프트를 감소시키는 온도 제어 핫 에지 링 어셈블리

Country Status (7)

Country Link
US (1) US7244336B2 (https=)
EP (1) EP1706898B1 (https=)
JP (1) JP4913603B2 (https=)
KR (1) KR101131022B1 (https=)
CN (1) CN100474521C (https=)
TW (1) TWI368274B (https=)
WO (1) WO2005059962A2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101558771B1 (ko) 2013-05-14 2015-10-12 글로벌 머터리얼 사이언스 주식회사 광전식 반도체 제조 공정용 증착 장치 및 그 쉐도우 프레임
US10153137B2 (en) 2015-10-16 2018-12-11 Semes Co., Ltd. Support unit, substrate treating apparatus including the same, and method for treating a substrate
TWI780093B (zh) * 2017-12-15 2022-10-11 美商蘭姆研究公司 用於電漿腔室的環結構及系統
KR20240016743A (ko) * 2022-07-29 2024-02-06 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법

Families Citing this family (119)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246873B (en) 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
GB0121980D0 (en) 2001-09-11 2001-10-31 Cathnet Science Holding As Expandable stent
US8080048B2 (en) 2001-12-03 2011-12-20 Xtent, Inc. Stent delivery for bifurcated vessels
US7351255B2 (en) 2001-12-03 2008-04-01 Xtent, Inc. Stent delivery apparatus and method
US7147656B2 (en) 2001-12-03 2006-12-12 Xtent, Inc. Apparatus and methods for delivery of braided prostheses
US7270668B2 (en) * 2001-12-03 2007-09-18 Xtent, Inc. Apparatus and methods for delivering coiled prostheses
US7294146B2 (en) 2001-12-03 2007-11-13 Xtent, Inc. Apparatus and methods for delivery of variable length stents
US7309350B2 (en) 2001-12-03 2007-12-18 Xtent, Inc. Apparatus and methods for deployment of vascular prostheses
US20030135266A1 (en) * 2001-12-03 2003-07-17 Xtent, Inc. Apparatus and methods for delivery of multiple distributed stents
US7182779B2 (en) 2001-12-03 2007-02-27 Xtent, Inc. Apparatus and methods for positioning prostheses for deployment from a catheter
US7137993B2 (en) 2001-12-03 2006-11-21 Xtent, Inc. Apparatus and methods for delivery of multiple distributed stents
US20040186551A1 (en) 2003-01-17 2004-09-23 Xtent, Inc. Multiple independent nested stent structures and methods for their preparation and deployment
US7892273B2 (en) 2001-12-03 2011-02-22 Xtent, Inc. Custom length stent apparatus
TW200416801A (en) * 2003-01-07 2004-09-01 Tokyo Electron Ltd Plasma processing apparatus and focus ring
US7241308B2 (en) 2003-06-09 2007-07-10 Xtent, Inc. Stent deployment systems and methods
US6840569B1 (en) * 2003-07-22 2005-01-11 Arthur Donald Leigh Caravan
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US7553324B2 (en) 2003-10-14 2009-06-30 Xtent, Inc. Fixed stent delivery devices and methods
US7192440B2 (en) * 2003-10-15 2007-03-20 Xtent, Inc. Implantable stent delivery devices and methods
US7326236B2 (en) 2003-12-23 2008-02-05 Xtent, Inc. Devices and methods for controlling and indicating the length of an interventional element
US7323006B2 (en) 2004-03-30 2008-01-29 Xtent, Inc. Rapid exchange interventional devices and methods
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
US20050288766A1 (en) 2004-06-28 2005-12-29 Xtent, Inc. Devices and methods for controlling expandable prostheses during deployment
US8317859B2 (en) 2004-06-28 2012-11-27 J.W. Medical Systems Ltd. Devices and methods for controlling expandable prostheses during deployment
US8349128B2 (en) * 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US7402168B2 (en) 2005-04-11 2008-07-22 Xtent, Inc. Custom-length stent delivery system with independently operable expansion elements
JP4285456B2 (ja) * 2005-07-20 2009-06-24 セイコーエプソン株式会社 マスク、マスクの製造方法、成膜方法及び電気光学装置の製造方法
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
AU2007227000A1 (en) 2006-03-20 2007-09-27 Xtent, Inc. Apparatus and methods for deployment of linked prosthetic segments
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) * 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080199510A1 (en) 2007-02-20 2008-08-21 Xtent, Inc. Thermo-mechanically controlled implants and methods of use
US8486132B2 (en) 2007-03-22 2013-07-16 J.W. Medical Systems Ltd. Devices and methods for controlling expandable prostheses during deployment
JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
KR101577474B1 (ko) * 2008-02-08 2015-12-14 램 리써치 코포레이션 플라즈마 프로세싱 장치용 rf 리턴 스트랩
US9101503B2 (en) 2008-03-06 2015-08-11 J.W. Medical Systems Ltd. Apparatus having variable strut length and methods of use
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
US12324756B2 (en) 2008-09-25 2025-06-10 Advanced Bifurcation Systems Inc. System and methods for treating a bifurcation
US12076258B2 (en) 2008-09-25 2024-09-03 Advanced Bifurcation Systems Inc. Selective stent crimping
US8821562B2 (en) 2008-09-25 2014-09-02 Advanced Bifurcation Systems, Inc. Partially crimped stent
JP5635515B2 (ja) 2008-09-25 2014-12-03 アドバンスド バイファケーション システムズ， インコーポレイテッド 部分的圧着ステント
US11298252B2 (en) 2008-09-25 2022-04-12 Advanced Bifurcation Systems Inc. Stent alignment during treatment of a bifurcation
US8828071B2 (en) 2008-09-25 2014-09-09 Advanced Bifurcation Systems, Inc. Methods and systems for ostial stenting of a bifurcation
US8454027B2 (en) * 2008-09-26 2013-06-04 Lam Research Corporation Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
WO2010101191A1 (ja) * 2009-03-03 2010-09-10 東京エレクトロン株式会社 載置台構造、成膜装置、及び、原料回収方法
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
DE202010014805U1 (de) * 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
JP2011176228A (ja) * 2010-02-25 2011-09-08 Oki Semiconductor Co Ltd プラズマ処理装置及びフォーカスリング
WO2011119884A1 (en) 2010-03-24 2011-09-29 Advanced Bifurcation Systems, Inc System and methods for treating a bifurcation
EP2549958A4 (en) 2010-03-24 2016-09-14 Advanced Bifurcation Systems Inc METHODS AND SYSTEMS FOR TREATING BIFURCATION WITH IMPLANTATION OF PROVISIONAL VASCULAR STENT OF LATERAL RAMIFICATION
CN103068345B (zh) 2010-03-24 2015-10-14 高级分支系统股份有限公司 在对分叉部进行处理过程中的支架对准
EP3449879B1 (en) 2011-02-08 2020-09-23 Advanced Bifurcation Systems Inc. System for treating a bifurcation with a fully crimped stent
EP2672925B1 (en) 2011-02-08 2017-05-03 Advanced Bifurcation Systems, Inc. Multi-stent and multi-balloon apparatus for treating bifurcations
CN102251217A (zh) * 2011-07-07 2011-11-23 杨继远 增大芯片键合面积的方法
US9947559B2 (en) * 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
CN103094037B (zh) * 2011-11-08 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种夹持装置及应用该夹持装置的等离子体加工设备
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
CN104862660B (zh) * 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
KR102401501B1 (ko) 2014-12-19 2022-05-23 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버를 위한 에지 링
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US9633875B2 (en) * 2015-03-13 2017-04-25 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
KR102709229B1 (ko) * 2015-12-07 2024-09-23 어플라이드 머티어리얼스, 인코포레이티드 병합형 커버 링
CN116110846A (zh) 2016-01-26 2023-05-12 应用材料公司 晶片边缘环升降解决方案
CN108369922B (zh) * 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
KR102581226B1 (ko) 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
KR102652428B1 (ko) * 2017-12-15 2024-03-27 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
US12293902B2 (en) * 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7129307B2 (ja) * 2018-10-10 2022-09-01 東京エレクトロン株式会社 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
KR102647177B1 (ko) 2019-02-11 2024-03-15 삼성전자주식회사 플라즈마 처리 장치
KR102702089B1 (ko) * 2019-03-22 2024-09-03 삼성전자주식회사 에지 링을 갖는 기판 처리 장치
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
WO2020214327A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
US11894255B2 (en) 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP2021040011A (ja) * 2019-09-02 2021-03-11 キオクシア株式会社 プラズマ処理装置
JP7471810B2 (ja) * 2019-12-13 2024-04-22 東京エレクトロン株式会社 リングアセンブリ、基板支持体及び基板処理装置
JP7667165B2 (ja) * 2020-02-04 2025-04-22 ラム リサーチ コーポレーション 基板処理用の静電エッジリング取り付けシステム
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
CN116349002A (zh) 2020-10-05 2023-06-27 朗姆研究公司 用于等离子体处理系统的可移动边缘环
KR20220102201A (ko) 2021-01-12 2022-07-20 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP2022150471A (ja) * 2021-03-26 2022-10-07 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
KR102608903B1 (ko) 2021-04-12 2023-12-04 삼성전자주식회사 플라즈마 식각 장치 및 방법
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
CN120565385A (zh) * 2021-09-08 2025-08-29 北京屹唐半导体科技股份有限公司 用于清洁等离子体加工设备的聚焦环的导电构件
JP7569772B2 (ja) * 2021-10-07 2024-10-18 日本碍子株式会社 半導体製造装置用部材
KR102896325B1 (ko) 2021-11-09 2025-12-08 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same
US12553125B2 (en) * 2022-09-27 2026-02-17 Applied Materials Inc. Protective gas flow during wafer dechucking in PVD chamber
US12387912B2 (en) * 2023-07-06 2025-08-12 Applied Materials, Inc. Shield ring mounting using compliant hardware

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150365A (ja) * 1989-07-26 1991-06-26 Tokyo Electron Ltd 熱処理装置
JPH04279044A (ja) * 1991-01-09 1992-10-05 Sumitomo Metal Ind Ltd 試料保持装置
JP3209472B2 (ja) * 1993-11-05 2001-09-17 東京エレクトロン株式会社 ネジキャップおよび処理装置
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2917992B1 (ja) * 1998-04-10 1999-07-12 日本電気株式会社 研磨装置
US6251215B1 (en) * 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6379491B1 (en) * 1998-10-30 2002-04-30 Promos Technologies, Inc. Plasma chamber with erosion resistive securement screws
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP2001093877A (ja) * 1999-09-22 2001-04-06 Texas Instr Japan Ltd 半導体装置の製造方法
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6377437B1 (en) 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US6238513B1 (en) * 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6383931B1 (en) 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
KR100635975B1 (ko) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재
KR100856451B1 (ko) * 2000-04-25 2008-09-04 도쿄엘렉트론가부시키가이샤 소재의 플라즈마 세정장치 및 방법
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6391787B1 (en) 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101558771B1 (ko) 2013-05-14 2015-10-12 글로벌 머터리얼 사이언스 주식회사 광전식 반도체 제조 공정용 증착 장치 및 그 쉐도우 프레임
US10153137B2 (en) 2015-10-16 2018-12-11 Semes Co., Ltd. Support unit, substrate treating apparatus including the same, and method for treating a substrate
TWI780093B (zh) * 2017-12-15 2022-10-11 美商蘭姆研究公司 用於電漿腔室的環結構及系統
KR20240016743A (ko) * 2022-07-29 2024-02-06 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법
KR102722858B1 (ko) 2022-07-29 2024-10-29 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법

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US7244336B2 (en) 2007-07-17
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