JP4909737B2 - 電荷蓄積場所を有するメモリ - Google Patents

電荷蓄積場所を有するメモリ Download PDF

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Publication number
JP4909737B2
JP4909737B2 JP2006532423A JP2006532423A JP4909737B2 JP 4909737 B2 JP4909737 B2 JP 4909737B2 JP 2006532423 A JP2006532423 A JP 2006532423A JP 2006532423 A JP2006532423 A JP 2006532423A JP 4909737 B2 JP4909737 B2 JP 4909737B2
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JP
Japan
Prior art keywords
charge storage
layer
gate
region
gate structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2006532423A
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English (en)
Japanese (ja)
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JP2007500949A (ja
JP2007500949A5 (enExample
Inventor
マシュー、レオ
エフ． スタイムル、ロバート
ムラリダー、ラマチャンドラン
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NXP USA Inc
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NXP USA Inc
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Publication of JP2007500949A5 publication Critical patent/JP2007500949A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/687—Floating-gate IGFETs having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/06—Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6215—Fin field-effect transistors [FinFET] having multiple independently-addressable gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2006532423A 2003-05-22 2004-04-16 電荷蓄積場所を有するメモリ Expired - Lifetime JP4909737B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/443,908 2003-05-22
US10/443,908 US6903967B2 (en) 2003-05-22 2003-05-22 Memory with charge storage locations and adjacent gate structures
PCT/US2004/011868 WO2004107351A1 (en) 2003-05-22 2004-04-16 Memory with charge storage locations

Publications (3)

Publication Number Publication Date
JP2007500949A JP2007500949A (ja) 2007-01-18
JP2007500949A5 JP2007500949A5 (enExample) 2007-06-07
JP4909737B2 true JP4909737B2 (ja) 2012-04-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006532423A Expired - Lifetime JP4909737B2 (ja) 2003-05-22 2004-04-16 電荷蓄積場所を有するメモリ

Country Status (6)

Country Link
US (1) US6903967B2 (enExample)
JP (1) JP4909737B2 (enExample)
KR (1) KR20060009955A (enExample)
CN (1) CN100587838C (enExample)
TW (1) TWI257171B (enExample)
WO (1) WO2004107351A1 (enExample)

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Also Published As

Publication number Publication date
JP2007500949A (ja) 2007-01-18
CN1795510A (zh) 2006-06-28
TW200507245A (en) 2005-02-16
CN100587838C (zh) 2010-02-03
US20050057964A1 (en) 2005-03-17
WO2004107351A1 (en) 2004-12-09
KR20060009955A (ko) 2006-02-01
TWI257171B (en) 2006-06-21
US6903967B2 (en) 2005-06-07

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