JP4902767B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP4902767B2
JP4902767B2 JP2010103482A JP2010103482A JP4902767B2 JP 4902767 B2 JP4902767 B2 JP 4902767B2 JP 2010103482 A JP2010103482 A JP 2010103482A JP 2010103482 A JP2010103482 A JP 2010103482A JP 4902767 B2 JP4902767 B2 JP 4902767B2
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JP
Japan
Prior art keywords
photoelectric conversion
layer
unit
type
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010103482A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011233752A (ja
JP2011233752A5 (enExample
Inventor
茂郎 矢田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2010103482A priority Critical patent/JP4902767B2/ja
Priority to PCT/JP2011/060047 priority patent/WO2011136169A1/ja
Publication of JP2011233752A publication Critical patent/JP2011233752A/ja
Publication of JP2011233752A5 publication Critical patent/JP2011233752A5/ja
Application granted granted Critical
Publication of JP4902767B2 publication Critical patent/JP4902767B2/ja
Priority to US13/616,091 priority patent/US8759667B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2010103482A 2010-04-28 2010-04-28 光電変換装置 Expired - Fee Related JP4902767B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010103482A JP4902767B2 (ja) 2010-04-28 2010-04-28 光電変換装置
PCT/JP2011/060047 WO2011136169A1 (ja) 2010-04-28 2011-04-25 光電変換装置
US13/616,091 US8759667B2 (en) 2010-04-28 2012-09-14 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010103482A JP4902767B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Publications (3)

Publication Number Publication Date
JP2011233752A JP2011233752A (ja) 2011-11-17
JP2011233752A5 JP2011233752A5 (enExample) 2012-01-05
JP4902767B2 true JP4902767B2 (ja) 2012-03-21

Family

ID=44861468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010103482A Expired - Fee Related JP4902767B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Country Status (3)

Country Link
US (1) US8759667B2 (enExample)
JP (1) JP4902767B2 (enExample)
WO (1) WO2011136169A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110308583A1 (en) * 2010-06-16 2011-12-22 International Business Machines Corporation Plasma treatment at a p-i junction for increasing open circuit voltage of a photovoltaic device
WO2013065538A1 (ja) * 2011-11-03 2013-05-10 三洋電機株式会社 光電変換装置
CN103378208A (zh) * 2012-04-25 2013-10-30 杜邦太阳能有限公司 太阳能电池
JP2014179413A (ja) * 2013-03-14 2014-09-25 Toshiba Corp 固体撮像装置
US9905837B2 (en) * 2014-08-21 2018-02-27 Sony Corporation Imaging element, solid-state imaging device, and electronic device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11251612A (ja) * 1998-03-03 1999-09-17 Canon Inc 光起電力素子の製造方法
JP2002057359A (ja) * 2000-06-01 2002-02-22 Sharp Corp 積層型太陽電池
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
JP2007266094A (ja) * 2006-03-27 2007-10-11 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置及びプラズマｃｖｄによる半導体薄膜の成膜方法
JP5330723B2 (ja) 2008-03-28 2013-10-30 三菱重工業株式会社 光電変換装置
WO2011007593A1 (ja) * 2009-07-13 2011-01-20 三洋電機株式会社 薄膜太陽電池及びその製造方法

Also Published As

Publication number Publication date
WO2011136169A1 (ja) 2011-11-03
JP2011233752A (ja) 2011-11-17
US8759667B2 (en) 2014-06-24
US20130000710A1 (en) 2013-01-03

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