JP4940328B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP4940328B2 JP4940328B2 JP2010104455A JP2010104455A JP4940328B2 JP 4940328 B2 JP4940328 B2 JP 4940328B2 JP 2010104455 A JP2010104455 A JP 2010104455A JP 2010104455 A JP2010104455 A JP 2010104455A JP 4940328 B2 JP4940328 B2 JP 4940328B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 84
- 239000004065 semiconductor Substances 0.000 claims description 38
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- 239000007789 gas Substances 0.000 description 60
- 229910021417 amorphous silicon Inorganic materials 0.000 description 45
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 44
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 39
- 239000002019 doping agent Substances 0.000 description 19
- 238000010248 power generation Methods 0.000 description 19
- 230000001965 increasing effect Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 238000002156 mixing Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 9
- 239000012895 dilution Substances 0.000 description 8
- 238000010790 dilution Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910002092 carbon dioxide Inorganic materials 0.000 description 7
- 239000001569 carbon dioxide Substances 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- -1 methane (CH 4 ) Chemical compound 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、第1の実施の形態における光電変換装置200の構造を示す断面図である。本実施の形態における光電変換装置200は、透明絶縁基板30を光入射側として、光入射側から、透明導電層32、トップセルとして広いバンドギャップを有するアモルファスシリコン光電変換ユニット(a−Siユニット)202、ボトムセルとしてa−Siユニット202よりバンドギャップの狭い微結晶シリコン光電変換ユニット(μc−Siユニット)204及び裏面電極層34を積層した構造を有している。
第2の実施の形態における光電変換装置206は、図4に示すように、第1の実施の形態における光電変換装置200の第1中間層44のみを設けて、第2中間層48を設けない構成とする。
図5は、第3の実施の形態における光電変換装置300の構造を示す断面図である。本実施の形態における光電変換装置300は、第1の実施の形態における光電変換装置200のようにμc−Siユニット204に第1中間層44及び第2中間層48を設ける代りに、a−Siユニット202に第1中間層52及び第2中間層54を設けている。各層の成膜方法は、第1の実施の形態と同様であるので説明を省略する。
第4の実施の形態における光電変換装置302は、図8に示すように、第3の実施の形態における光電変換装置300の第2中間層54のみを設けて、第1中間層52を設けない構成とする。
本願発明は、結晶系の光電変換装置に対して適用することができる。図9は、単結晶シリコン層60を備える光電変換装置400の構造を示す断面模式図である。
Claims (3)
- p型層、i型層、n型層である半導体膜を積層した光電変換装置であって、
前記i型層に接し、前記i型層より小さい屈折率の範囲内において前記i型層に接する側から前記i型層に接しない側に向かって屈折率が大きくなる中間層を備え、
前記中間層は、前記i型層を挟むように配置された第1中間層及び第2中間層を備えることを特徴とする光電変換装置。 - 請求項1に記載の光電変換装置であって、
前記第1中間層は、前記第2中間層より光入射面に近く配置され、
前記第2中間層の前記i型層に接する側の屈折率より前記第1中間層の前記i型層に接する側の屈折率が大きいことを特徴とする光電変換装置。 - 請求項1又は2に記載の光電変換装置であって、
前記第1中間層は、前記第2中間層より光入射面に近く配置され、前記第2中間層以下の膜厚であることを特徴とする光電変換装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010104455A JP4940328B2 (ja) | 2010-04-28 | 2010-04-28 | 光電変換装置 |
PCT/JP2011/060043 WO2011136167A1 (ja) | 2010-04-28 | 2011-04-25 | 光電変換装置 |
US13/614,788 US20130014810A1 (en) | 2010-04-28 | 2012-09-13 | Photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010104455A JP4940328B2 (ja) | 2010-04-28 | 2010-04-28 | 光電変換装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011274431A Division JP5420628B2 (ja) | 2011-12-15 | 2011-12-15 | 光電変換装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011233786A JP2011233786A (ja) | 2011-11-17 |
JP2011233786A5 JP2011233786A5 (ja) | 2012-01-26 |
JP4940328B2 true JP4940328B2 (ja) | 2012-05-30 |
Family
ID=44861466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010104455A Active JP4940328B2 (ja) | 2010-04-28 | 2010-04-28 | 光電変換装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20130014810A1 (ja) |
JP (1) | JP4940328B2 (ja) |
WO (1) | WO2011136167A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013065538A1 (ja) * | 2011-11-03 | 2013-05-10 | 三洋電機株式会社 | 光電変換装置 |
US8904876B2 (en) * | 2012-09-29 | 2014-12-09 | Stryker Corporation | Flexible piezocapacitive and piezoresistive force and pressure sensors |
JP6306411B2 (ja) * | 2014-04-17 | 2018-04-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8207010B2 (en) * | 2007-06-05 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
JP5400322B2 (ja) * | 2008-05-30 | 2014-01-29 | 株式会社カネカ | シリコン系薄膜太陽電池およびその製造方法 |
TW201021229A (en) * | 2008-11-21 | 2010-06-01 | Ind Tech Res Inst | Solar cell having reflective structure |
-
2010
- 2010-04-28 JP JP2010104455A patent/JP4940328B2/ja active Active
-
2011
- 2011-04-25 WO PCT/JP2011/060043 patent/WO2011136167A1/ja active Application Filing
-
2012
- 2012-09-13 US US13/614,788 patent/US20130014810A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2011136167A1 (ja) | 2011-11-03 |
JP2011233786A (ja) | 2011-11-17 |
US20130014810A1 (en) | 2013-01-17 |
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