JP2011060811A - 太陽電池モジュール及びその製造方法 - Google Patents
太陽電池モジュール及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 52
- 238000002425 crystallisation Methods 0.000 claims abstract description 15
- 230000008025 crystallization Effects 0.000 claims abstract description 15
- 238000010248 power generation Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000010408 film Substances 0.000 description 62
- 239000010410 layer Substances 0.000 description 62
- 239000007789 gas Substances 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 31
- 239000000758 substrate Substances 0.000 description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 239000002019 doping agent Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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Abstract
【解決手段】光電変換ユニット14に微結晶シリコン膜のi型層を発電層として含み、そのi型層は、面内において第1の領域30と、第1の領域30より結晶化率が低い第2の領域32とを有しており、太陽電池モジュール100の端子ボックス24へのタブ電極22を第2の領域32に重畳させて配置する。
【選択図】図1
Description
図1〜図3は、本発明の実施の形態におけるタンデム型太陽電池モジュール100の構造を示す図である。図1は光入射側の反対側からみた平面図であり、図2は図1のラインa−aの断面図であり、図3は図1のラインb−bの断面図である。なお、実際のタンデム型太陽電池モジュール100にはタブ電極を覆う絶縁性テープ、保護材となるEVAやバックシートが設けられるが、ここでは構造をより明確に示すために図示していない。
結晶化率X(%)=I520/(I520+I480)・・・(1)
上記第1の実施の形態で説明したタンデム型太陽電池モジュール100において、光電変換ユニット14の微結晶シリコンのi型層(μc−Siユニットのi型層)は、第1の領域30におけるキャリアのライフタイムが第2の領域32におけるキャリアのライフタイムよりも低くなるようにすることが好適である。
Claims (4)
- 発電層として微結晶シリコン膜を有する太陽電池モジュールであって、
前記発電層の微結晶シリコン膜は、太陽電池モジュールの面内の第1領域と、前記第1領域より結晶化率が低い第2領域と、を有し、
太陽電池モジュールの端子ボックスへのタブ電極は前記第2領域に重畳させて配置されていることを特徴とする太陽電池モジュール。 - 請求項1に記載の太陽電池モジュールであって、
前記第1領域は、太陽電池モジュールのパネルにおける中央領域であり、
前記第2領域は、太陽電池モジュールのパネルにおける周辺領域であることを特徴とする太陽電池モジュール。 - 請求項1又は2に記載の太陽電池モジュールであって、
前記第1領域におけるキャリアのライフタイムは、前記第2領域におけるキャリアのライフタイムよりも低いことを特徴とする太陽電池モジュール。 - 発電層として微結晶シリコン膜を有する太陽電池モジュールの製造方法であって、
太陽電池モジュールの面内の第1領域と、前記第1領域より結晶化率が低い第2領域と、を有する前記微結晶シリコン膜を形成する工程と、
前記第2領域に重畳させて太陽電池モジュール端子ボックスへのタブ電極を形成する工程と、
を有することを特徴とする太陽電池モジュールの製造方法。
Priority Applications (2)
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JP2009205618A JP2011060811A (ja) | 2009-09-07 | 2009-09-07 | 太陽電池モジュール及びその製造方法 |
US12/875,542 US20110056560A1 (en) | 2009-09-07 | 2010-09-03 | Solar cell module and manufacturing method thereof |
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JP2009205618A JP2011060811A (ja) | 2009-09-07 | 2009-09-07 | 太陽電池モジュール及びその製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013065805A (ja) * | 2011-09-15 | 2013-04-11 | Lg Electronics Inc | 薄膜太陽電池モジュール |
KR20140101491A (ko) * | 2013-02-08 | 2014-08-20 | 엘지전자 주식회사 | 태양 전지 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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TWM545367U (zh) * | 2017-02-24 | 2017-07-11 | Nano Bit Tech Co Ltd | 光伏電池裝置、光伏電池及其光伏模組 |
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JPH10326904A (ja) * | 1997-05-27 | 1998-12-08 | Fuji Electric Co Ltd | 太陽電池モジュールとその製造方法 |
JP2001077392A (ja) * | 1999-09-01 | 2001-03-23 | Kanegafuchi Chem Ind Co Ltd | 薄膜太陽電池モジュール及びその製造方法 |
JP2004031646A (ja) * | 2002-06-26 | 2004-01-29 | Fuji Electric Holdings Co Ltd | 太陽電池モジュール |
JP2007266094A (ja) * | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | プラズマcvd装置及びプラズマcvdによる半導体薄膜の成膜方法 |
JP4767365B2 (ja) * | 2009-07-13 | 2011-09-07 | 三洋電機株式会社 | 薄膜太陽電池及びその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH11251612A (ja) * | 1998-03-03 | 1999-09-17 | Canon Inc | 光起電力素子の製造方法 |
AU770820B2 (en) * | 1999-06-08 | 2004-03-04 | Kaneka Corporation | Method of encapsulating a photovoltaic module by an encapsulating material and the photovoltaic module |
US7534956B2 (en) * | 2003-04-10 | 2009-05-19 | Canon Kabushiki Kaisha | Solar cell module having an electric device |
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2009
- 2009-09-07 JP JP2009205618A patent/JP2011060811A/ja active Pending
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2010
- 2010-09-03 US US12/875,542 patent/US20110056560A1/en not_active Abandoned
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JPH10326904A (ja) * | 1997-05-27 | 1998-12-08 | Fuji Electric Co Ltd | 太陽電池モジュールとその製造方法 |
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JP2004031646A (ja) * | 2002-06-26 | 2004-01-29 | Fuji Electric Holdings Co Ltd | 太陽電池モジュール |
JP2007266094A (ja) * | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | プラズマcvd装置及びプラズマcvdによる半導体薄膜の成膜方法 |
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JP2013065805A (ja) * | 2011-09-15 | 2013-04-11 | Lg Electronics Inc | 薄膜太陽電池モジュール |
KR20140101491A (ko) * | 2013-02-08 | 2014-08-20 | 엘지전자 주식회사 | 태양 전지 |
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