JP4896314B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP4896314B2
JP4896314B2 JP2001235469A JP2001235469A JP4896314B2 JP 4896314 B2 JP4896314 B2 JP 4896314B2 JP 2001235469 A JP2001235469 A JP 2001235469A JP 2001235469 A JP2001235469 A JP 2001235469A JP 4896314 B2 JP4896314 B2 JP 4896314B2
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JP
Japan
Prior art keywords
film
light
insulating film
shielding film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001235469A
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English (en)
Japanese (ja)
Other versions
JP2002149087A5 (enrdf_load_stackoverflow
JP2002149087A (ja
Inventor
久 大谷
幸夫 田中
寛 柴田
明 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001235469A priority Critical patent/JP4896314B2/ja
Publication of JP2002149087A publication Critical patent/JP2002149087A/ja
Publication of JP2002149087A5 publication Critical patent/JP2002149087A5/ja
Application granted granted Critical
Publication of JP4896314B2 publication Critical patent/JP4896314B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001235469A 2000-08-04 2001-08-02 表示装置 Expired - Fee Related JP4896314B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001235469A JP4896314B2 (ja) 2000-08-04 2001-08-02 表示装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-236676 2000-08-04
JP2000236676 2000-08-04
JP2000236676 2000-08-04
JP2001235469A JP4896314B2 (ja) 2000-08-04 2001-08-02 表示装置

Publications (3)

Publication Number Publication Date
JP2002149087A JP2002149087A (ja) 2002-05-22
JP2002149087A5 JP2002149087A5 (enrdf_load_stackoverflow) 2008-09-11
JP4896314B2 true JP4896314B2 (ja) 2012-03-14

Family

ID=26597360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001235469A Expired - Fee Related JP4896314B2 (ja) 2000-08-04 2001-08-02 表示装置

Country Status (1)

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JP (1) JP4896314B2 (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4474108B2 (ja) * 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
JP2004103334A (ja) * 2002-09-06 2004-04-02 Seiko Epson Corp 有機ｅｌ装置および電子機器
JP3870941B2 (ja) 2002-10-31 2007-01-24 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4430010B2 (ja) * 2003-01-24 2010-03-10 株式会社半導体エネルギー研究所 発光装置
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
JP4930704B2 (ja) * 2006-03-14 2012-05-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置及び電子機器
JP5018336B2 (ja) 2007-08-22 2012-09-05 セイコーエプソン株式会社 電気光学装置及び電子機器
US9337247B2 (en) * 2014-01-21 2016-05-10 Apple Inc. Organic light-emitting diode display with bottom shields
US9716134B2 (en) 2014-01-21 2017-07-25 Apple Inc. Organic light-emitting diode display with bottom shields
JP6098017B2 (ja) * 2014-02-17 2017-03-22 エバーディスプレイ オプトロニクス（シャンハイ） リミテッド 薄膜トランジスタアレイ基板及びその製造方法
US10185190B2 (en) * 2016-05-11 2019-01-22 Semiconductor Energy Laboratory Co., Ltd. Display device, module, and electronic device
KR102489594B1 (ko) 2016-07-29 2023-01-18 엘지디스플레이 주식회사 협 베젤을 갖는 표시장치
KR20210086441A (ko) * 2019-12-30 2021-07-08 엘지디스플레이 주식회사 표시패널과 그 리페어 방법
JP7028281B2 (ja) * 2020-06-16 2022-03-02 セイコーエプソン株式会社 電気光学装置、及び電子機器
CN112038325B (zh) * 2020-08-20 2022-08-23 武汉华星光电半导体显示技术有限公司 显示面板

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3097852B2 (ja) * 1989-08-14 2000-10-10 株式会社日立製作所 液晶表示装置
JP2618534B2 (ja) * 1990-12-20 1997-06-11 シャープ株式会社 アクティブマトリクス表示装置の製造方法
JPH04283729A (ja) * 1991-03-13 1992-10-08 Sharp Corp アクティブマトリクス表示装置
JP3792277B2 (ja) * 1995-08-29 2006-07-05 株式会社東芝 液晶表示装置
JP3708637B2 (ja) * 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JP3674356B2 (ja) * 1998-01-30 2005-07-20 セイコーエプソン株式会社 電気光学装置及びその製造方法、ｔｆｔアレイ基板並びに電子機器
JP3837951B2 (ja) * 1998-02-09 2006-10-25 セイコーエプソン株式会社 電気光学パネル及び電子機器
JP3980167B2 (ja) * 1998-04-07 2007-09-26 株式会社日立製作所 Ｔｆｔ電極基板
JP3141860B2 (ja) * 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
US6850292B1 (en) * 1998-12-28 2005-02-01 Seiko Epson Corporation Electric-optic device, method of fabricating the same, and electronic apparatus
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
CN1267782C (zh) * 2000-04-21 2006-08-02 精工爱普生株式会社 电光装置

Also Published As

Publication number Publication date
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