JP4880620B2 - スパッタリングターゲットおよびその製造方法 - Google Patents

スパッタリングターゲットおよびその製造方法 Download PDF

Info

Publication number
JP4880620B2
JP4880620B2 JP2007555157A JP2007555157A JP4880620B2 JP 4880620 B2 JP4880620 B2 JP 4880620B2 JP 2007555157 A JP2007555157 A JP 2007555157A JP 2007555157 A JP2007555157 A JP 2007555157A JP 4880620 B2 JP4880620 B2 JP 4880620B2
Authority
JP
Japan
Prior art keywords
texture
rolling
metal plate
tantalum
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2007555157A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008532765A5 (enExample
JP2008532765A (ja
Inventor
イー.,ジュニア ウイッカーシャム,チャールズ
アイ. レビット,ブラディミール
アレクサンダー,ピー.トッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of JP2008532765A publication Critical patent/JP2008532765A/ja
Publication of JP2008532765A5 publication Critical patent/JP2008532765A5/ja
Application granted granted Critical
Publication of JP4880620B2 publication Critical patent/JP4880620B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02Alloys based on vanadium, niobium, or tantalum
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/02Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling heavy work, e.g. ingots, slabs, blooms, or billets, in which the cross-sectional form is unimportant ; Rolling combined with forging or pressing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/38Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21HMAKING PARTICULAR METAL OBJECTS BY ROLLING, e.g. SCREWS, WHEELS, RINGS, BARRELS, BALLS
    • B21H1/00Making articles shaped as bodies of revolution
    • B21H1/02Making articles shaped as bodies of revolution discs; disc wheels
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18High-melting or refractory metals or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12229Intermediate article [e.g., blank, etc.]
    • Y10T428/12236Panel having nonrectangular perimeter
    • Y10T428/12243Disk

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Metal Rolling (AREA)
JP2007555157A 2005-02-10 2006-02-07 スパッタリングターゲットおよびその製造方法 Expired - Lifetime JP4880620B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/055,535 US7998287B2 (en) 2005-02-10 2005-02-10 Tantalum sputtering target and method of fabrication
US11/055,535 2005-02-10
PCT/US2006/004143 WO2006086319A2 (en) 2005-02-10 2006-02-07 Sputtering target and method of fabrication

Publications (3)

Publication Number Publication Date
JP2008532765A JP2008532765A (ja) 2008-08-21
JP2008532765A5 JP2008532765A5 (enExample) 2009-02-12
JP4880620B2 true JP4880620B2 (ja) 2012-02-22

Family

ID=36572042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007555157A Expired - Lifetime JP4880620B2 (ja) 2005-02-10 2006-02-07 スパッタリングターゲットおよびその製造方法

Country Status (6)

Country Link
US (2) US7998287B2 (enExample)
EP (1) EP1848552B1 (enExample)
JP (1) JP4880620B2 (enExample)
KR (1) KR101253377B1 (enExample)
CN (2) CN101155650B (enExample)
WO (1) WO2006086319A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4970034B2 (ja) * 2003-08-11 2012-07-04 ハネウェル・インターナショナル・インコーポレーテッド ターゲット/バッキングプレート構造物、及びターゲット/バッキングプレート構造物の形成法
WO2005098073A1 (en) * 2004-03-26 2005-10-20 H.C. Starck Inc. Refractory metal pots
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
DE112007000440B4 (de) 2006-03-07 2021-01-07 Global Advanced Metals, Usa, Inc. Verfahren zum Erzeugen von verformten Metallartikeln
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
CN102367567B (zh) 2007-02-09 2015-04-01 Jx日矿日石金属株式会社 由难烧结物质构成的靶及其制造方法以及靶-背衬板组件及其制造方法
JP5586221B2 (ja) * 2007-02-27 2014-09-10 日本碍子株式会社 金属板材の圧延方法
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
KR101201577B1 (ko) 2007-08-06 2012-11-14 에이치. 씨. 스타아크 아이앤씨 향상된 조직 균일성을 가진 내화 금속판
KR100869268B1 (ko) * 2008-04-25 2008-11-18 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크, 하프톤형 위상반전포토마스크 및 그의 제조 방법
KR101626286B1 (ko) * 2008-11-03 2016-06-01 토소우 에스엠디, 인크 스퍼터 타겟 제조 방법 및 이에 의해 제조된 스퍼터 타겟
CN101649439B (zh) * 2009-05-08 2012-07-25 宁波江丰电子材料有限公司 靶材塑性变形方法
KR101288651B1 (ko) * 2009-05-22 2013-07-22 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈륨 스퍼터링 타겟
CN103069044B (zh) * 2010-08-09 2015-02-18 吉坤日矿日石金属株式会社 钽溅射靶
CN101956159A (zh) * 2010-09-30 2011-01-26 金堆城钼业股份有限公司 一种高纯钼溅射靶材的制备方法
CN102350439B (zh) * 2011-09-23 2014-04-23 宁波江丰电子材料有限公司 半导体用镍靶坯热轧方法
CN103827348B (zh) * 2011-11-30 2015-11-25 吉坤日矿日石金属株式会社 钽溅射靶及其制造方法
CN102513789B (zh) * 2011-12-21 2014-04-09 宁波江丰电子材料有限公司 钨靶材的制作方法
US9890452B2 (en) 2012-03-21 2018-02-13 Jx Nippon Mining & Metals Corporation Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target
CN102699247B (zh) * 2012-05-18 2014-06-18 宁夏东方钽业股份有限公司 一种超导钽棒的锻造方法
EP2878699B1 (en) 2012-12-19 2020-07-15 JX Nippon Mining & Metals Corp. Tantalum sputtering target and method for producing same
WO2014097900A1 (ja) 2012-12-19 2014-06-26 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
KR20150095885A (ko) 2013-03-04 2015-08-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법
MX2015017559A (es) * 2013-07-10 2016-05-09 Alcoa Inc Metodos para generar productos forjados y otros productos trabajados.
WO2015050041A1 (ja) 2013-10-01 2015-04-09 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット
WO2015146516A1 (ja) 2014-03-27 2015-10-01 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
KR20170134365A (ko) 2015-04-10 2017-12-06 토소우 에스엠디, 인크 탄탈 스퍼터 타겟의 제조 방법 및 그에 의해 제조된 스퍼터 타겟
JP6293928B2 (ja) * 2015-05-22 2018-03-14 Jx金属株式会社 タンタルスパッタリングターゲット及びその製造方法
EP3211118B1 (en) 2015-05-22 2020-09-09 JX Nippon Mining & Metals Corporation Tantalum sputtering target, and production method therefor
US11359273B2 (en) 2015-08-03 2022-06-14 Honeywell International Inc. Frictionless forged aluminum alloy sputtering target with improved properties
TW201738395A (zh) * 2015-11-06 2017-11-01 塔沙Smd公司 具有提高的沉積速率的製備鉭濺鍍靶材的方法
CA3011463C (en) * 2016-01-14 2020-07-07 Arconic Inc. Methods for producing forged products and other worked products
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
JP6553813B2 (ja) 2017-03-30 2019-07-31 Jx金属株式会社 タンタルスパッタリングターゲット
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
JP2019173048A (ja) * 2018-03-26 2019-10-10 Jx金属株式会社 スパッタリングターゲット部材及びその製造方法
US11450516B2 (en) * 2019-08-14 2022-09-20 Honeywell International Inc. Large-grain tin sputtering target
TW202540463A (zh) * 2023-12-05 2025-10-16 美商塔沙Smd公司 具有改善的性能及可預測性之鉭濺射靶及其製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001509548A (ja) * 1997-07-11 2001-07-24 ジョンソン マッティー エレクトロニクス インコーポレイテッド チタンスパッタターゲット及びその製造方法
JP2002530534A (ja) * 1998-11-25 2002-09-17 キャボット コーポレイション 高純度タンタルおよびそれを含む、スパッタターゲットのような製品
JP2004513228A (ja) * 2000-11-02 2004-04-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット及び金属材料の製造方法
JP2004526863A (ja) * 2001-02-20 2004-09-02 ハー ツェー シュタルク インコーポレイテッド 均一な集合組織を有する耐火金属板及び該板を製造する方法
JP2007516352A (ja) * 2003-06-09 2007-06-21 キャボット コーポレイション 多方向変形によってスパッタリング物品を形成する方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE645631C (de) 1934-08-29 1937-06-01 Kronprinz A G Fuer Metallindus Verfahren zur moeglichst abfallosen Herstellung von Blechscheiben
US4209375A (en) * 1979-08-02 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Sputter target
US4884746A (en) 1987-02-05 1989-12-05 Radial Turbine International A/S Fuel nozzle and improved system and method for injecting fuel into a gas turbine engine
DE3712281A1 (de) 1987-04-10 1988-10-27 Heraeus Gmbh W C Verfahren zur herstellung von hochduktilem tantal-halbzeug
SU1454527A1 (ru) * 1987-04-29 1989-01-30 Московский институт стали и сплавов Валковый узел прокатного стана дл электропластической деформации тонких лент
JPH05255752A (ja) 1992-01-24 1993-10-05 Nippon Steel Corp セミプロセス無方向性電磁鋼板の製造方法
FR2729596A1 (fr) 1992-05-07 1996-07-26 Commissariat Energie Atomique Procede de fabrication de pieces metalliques par forgeage libre et matricage sous presse
JPH08263438A (ja) * 1994-11-23 1996-10-11 Xerox Corp ディジタルワークの配給及び使用制御システム並びにディジタルワークへのアクセス制御方法
US5681405A (en) * 1995-03-09 1997-10-28 Golden Aluminum Company Method for making an improved aluminum alloy sheet product
US5836506A (en) * 1995-04-21 1998-11-17 Sony Corporation Sputter target/backing plate assembly and method of making same
WO1997025798A1 (en) * 1996-01-11 1997-07-17 Mrj, Inc. System for controlling access and distribution of digital property
JPH1112726A (ja) 1997-06-20 1999-01-19 Sony Corp スパッタリングターゲット及びその製造方法
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6385596B1 (en) * 1998-02-06 2002-05-07 Liquid Audio, Inc. Secure online music distribution system
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6193821B1 (en) 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
AU5784800A (en) * 1999-06-30 2001-01-31 Accenture Llp A system, method and article of manufacture for an internet based distribution architecture
US6283357B1 (en) * 1999-08-03 2001-09-04 Praxair S.T. Technology, Inc. Fabrication of clad hollow cathode magnetron sputter targets
US7424543B2 (en) * 1999-09-08 2008-09-09 Rice Iii James L System and method of permissive data flow and application transfer
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
AU2000269232A1 (en) * 2000-01-14 2001-07-24 Microsoft Corporation Specifying security for an element by assigning a scaled value representative ofthe relative security thereof
US20020052933A1 (en) * 2000-01-14 2002-05-02 Gerd Leonhard Method and apparatus for licensing media over a network
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
AU2001296213A1 (en) * 2000-05-22 2001-12-24 Cabot Corporation High purity niobium and products containing the same, and methods of making the same
US6462339B1 (en) 2000-09-20 2002-10-08 Cabot Corporation Method for quantifying the texture homogeneity of a polycrystalline material
US6887356B2 (en) 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
EP1243998B1 (en) * 2001-03-21 2017-04-19 Excalibur IP, LLC A technique for license management and online software license enforcement
US7856414B2 (en) * 2001-03-29 2010-12-21 Christopher Zee Assured archival and retrieval system for digital intellectual property
US7216368B2 (en) * 2001-03-29 2007-05-08 Sony Corporation Information processing apparatus for watermarking digital content
GB2376540B (en) * 2001-06-12 2005-05-04 Hewlett Packard Co Upgrade of licensed capacity on computer entity
US6770154B2 (en) 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
US6976380B1 (en) * 2002-01-24 2005-12-20 The Texas A&M University System Developing the texture of a material
US7330954B2 (en) * 2002-04-18 2008-02-12 Intel Corporation Storing information in one of at least two storage devices based on a storage parameter and an attribute of the storage devices
US10986403B2 (en) * 2002-06-27 2021-04-20 Piranha Media Distribution, Inc. Interactive digital media and advertising presentation platform
US20040044697A1 (en) * 2002-08-28 2004-03-04 Nixon Michael L. Systems and methods for distributing, obtaining and using digital media files
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
US7870385B2 (en) * 2004-02-03 2011-01-11 Music Public Broadcasting, Inc. Method and system for controlling presentation of computer readable media on a media storage device
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
WO2011029859A1 (de) 2009-09-09 2011-03-17 Knorr-Bremse Systeme für Schienenfahrzeuge GmbH Verfahren und vorrichtung zum abschätzen der temperatur eines radsatzlagers eines radsatzes eines schienenfahrzeugs

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001509548A (ja) * 1997-07-11 2001-07-24 ジョンソン マッティー エレクトロニクス インコーポレイテッド チタンスパッタターゲット及びその製造方法
JP2002530534A (ja) * 1998-11-25 2002-09-17 キャボット コーポレイション 高純度タンタルおよびそれを含む、スパッタターゲットのような製品
JP2007084931A (ja) * 1998-11-25 2007-04-05 Cabot Corp 高純度タンタルおよびそれを含む、スパッタターゲットのような製品
JP2004513228A (ja) * 2000-11-02 2004-04-30 ハネウェル・インターナショナル・インコーポレーテッド 物理蒸着ターゲット及び金属材料の製造方法
JP2004526863A (ja) * 2001-02-20 2004-09-02 ハー ツェー シュタルク インコーポレイテッド 均一な集合組織を有する耐火金属板及び該板を製造する方法
JP2007516352A (ja) * 2003-06-09 2007-06-21 キャボット コーポレイション 多方向変形によってスパッタリング物品を形成する方法

Also Published As

Publication number Publication date
CN101155650A (zh) 2008-04-02
KR20070107114A (ko) 2007-11-06
US20110297536A1 (en) 2011-12-08
CN102513353A (zh) 2012-06-27
CN102513353B (zh) 2016-02-17
US7998287B2 (en) 2011-08-16
US8231745B2 (en) 2012-07-31
JP2008532765A (ja) 2008-08-21
CN101155650B (zh) 2012-02-01
EP1848552B1 (en) 2012-10-10
EP1848552A2 (en) 2007-10-31
WO2006086319A3 (en) 2006-12-28
WO2006086319A2 (en) 2006-08-17
US20070089815A1 (en) 2007-04-26
KR101253377B1 (ko) 2013-04-11

Similar Documents

Publication Publication Date Title
JP4880620B2 (ja) スパッタリングターゲットおよびその製造方法
US8382920B2 (en) Methods of producing deformed metal articles
TWI484054B (zh) 濺鍍靶及藉由旋轉軸鍛造製造彼等之方法
JP5696051B2 (ja) スパッターターゲットを製造する方法
CN103572223B (zh) 钽靶材及钽靶材组件的制造方法
JP2007536431A5 (enExample)
US7228722B2 (en) Method of forming sputtering articles by multidirectional deformation
JP7145963B2 (ja) スパッタリングターゲット及びその製造方法
US12545993B2 (en) Tantalum sputtering target with improved performance and predictability and method of manufacturing
US20250270687A1 (en) Tantalum sputtering target with improved performance and predictability and method of manufacturing
KR20210047343A (ko) 스퍼터링 타깃 및 그 제조 방법
WO2025129000A1 (en) Refractory metal plates
WO2025122801A1 (en) Tantalum sputtering target with improved performance and predictability and method of manufacturing

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081215

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081215

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090415

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110405

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110705

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110712

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111005

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111201

R150 Certificate of patent or registration of utility model

Ref document number: 4880620

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141209

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250