AU2001296213A1 - High purity niobium and products containing the same, and methods of making the same - Google Patents

High purity niobium and products containing the same, and methods of making the same

Info

Publication number
AU2001296213A1
AU2001296213A1 AU2001296213A AU9621301A AU2001296213A1 AU 2001296213 A1 AU2001296213 A1 AU 2001296213A1 AU 2001296213 A AU2001296213 A AU 2001296213A AU 9621301 A AU9621301 A AU 9621301A AU 2001296213 A1 AU2001296213 A1 AU 2001296213A1
Authority
AU
Australia
Prior art keywords
niobium
same
metal
high purity
reaction container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296213A
Inventor
Louis E. Huber Jr.
Christopher A. Michaluk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of AU2001296213A1 publication Critical patent/AU2001296213A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00—Obtaining refractory metals
    • C22B34/20—Obtaining niobium, tantalum or vanadium
    • C22B34/24—Obtaining niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C22B5/02—Dry methods smelting of sulfides or formation of mattes
    • C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

High purity niobium metals and alloys containing the same are described. The niobium metal preferably has a purity of at least 99.99% and more preferably at least 99.999%. In addition, niobium metal and alloys thereof are described, which either have a grain size of about 150 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 30 random, or an incremental log ratio of (111):(100) intensity of greater than about -4.0, or any combination of these properties. Also described are articles and components made from the niobium metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity niobium metal which includes the step of reacting a salt-containing niobium and a metal salt along with at least one compound capable of reducing the salt-containing niobium to niobium and in a reaction container. The reaction container or liner in the reaction container and the agitator or liner on the agitator are made from a metal material having the same or higher vapor pressure of melted niobium. The high purity niobium product preferably has a fine and uniform microstructure.
AU2001296213A 2000-05-22 2001-05-21 High purity niobium and products containing the same, and methods of making the same Abandoned AU2001296213A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20615900P 2000-05-22 2000-05-22
US60/206,159 2000-05-22
PCT/US2001/016438 WO2001096620A2 (en) 2000-05-22 2001-05-21 High purity niobium and products containing the same, and methods of making the same

Publications (1)

Publication Number Publication Date
AU2001296213A1 true AU2001296213A1 (en) 2001-12-24

Family

ID=22765229

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296213A Abandoned AU2001296213A1 (en) 2000-05-22 2001-05-21 High purity niobium and products containing the same, and methods of making the same

Country Status (11)

Country Link
US (2) US6863750B2 (en)
EP (1) EP1287172B1 (en)
JP (1) JP5341292B2 (en)
KR (1) KR100815034B1 (en)
CN (1) CN1328409C (en)
AT (1) ATE412782T1 (en)
AU (1) AU2001296213A1 (en)
DE (1) DE60136351D1 (en)
MY (1) MY134162A (en)
TW (1) TW587101B (en)
WO (1) WO2001096620A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL156802A0 (en) * 2001-01-11 2004-02-08 Cabot Corp Tantalum and niobium billets and methods of producing same
AU2002257005B2 (en) * 2001-02-20 2007-05-31 H.C. Starck, Inc. Refractory metal plates with uniform texture and methods of making the same
US7210641B2 (en) 2001-02-28 2007-05-01 Cabot Corporation Methods of making a niobium metal oxide
JP2004143477A (en) * 2002-10-22 2004-05-20 Cabot Supermetal Kk Niobium powder and production method therefor, and solid electrolytic capacitor obtained by using the same
JP4928706B2 (en) * 2002-12-03 2012-05-09 株式会社東芝 Method for producing Nb sputtering target for optical thin film formation
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
EP1638891A2 (en) 2003-05-19 2006-03-29 Cabot Corporation Methods of making a niobium metal oxide and oxygen reduced niobium oxides
US7228722B2 (en) 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
CN1836307A (en) * 2003-06-20 2006-09-20 卡伯特公司 Method and design for sputter target attachment to a backing plate
WO2005080961A2 (en) * 2004-02-18 2005-09-01 Cabot Corporation Ultrasonic method for detecting banding in metals
US8252126B2 (en) 2004-05-06 2012-08-28 Global Advanced Metals, Usa, Inc. Sputter targets and methods of forming same by rotary axial forging
US7666243B2 (en) 2004-10-27 2010-02-23 H.C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
JP2006161066A (en) * 2004-12-02 2006-06-22 Seiko Epson Corp Sputtering target, manufacturing method therefor, sputtering device and liquid-spouting head
US7998287B2 (en) * 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
US8128765B2 (en) * 2005-04-05 2012-03-06 Jefferson Science Associates, Llc Large grain cavities from pure niobium ingot
JP5126742B2 (en) * 2005-04-28 2013-01-23 Ｊｘ日鉱日石金属株式会社 Sputtering target
US20070044873A1 (en) * 2005-08-31 2007-03-01 H. C. Starck Inc. Fine grain niobium sheet via ingot metallurgy
JP4034802B2 (en) * 2005-11-22 2008-01-16 株式会社神戸製鋼所 Nb or Nb-based alloy rod for production of superconducting wire and method for producing Nb3Sn superconducting wire
JP5114812B2 (en) * 2006-03-07 2013-01-09 キャボット コーポレイション Method for producing deformed metal member
CN100357464C (en) * 2006-06-03 2007-12-26 郭青蔚 Technology of preparing fluorine less niobium oxide by oxalic acid system extraction method
CN100529150C (en) * 2007-12-17 2009-08-19 西部金属材料股份有限公司 Method for preparing niobium sheet metal strip
JP5308683B2 (en) * 2008-01-29 2013-10-09 株式会社神戸製鋼所 Bronze method Nb3Sn superconducting wire production Nb or Nb-based alloy rod, Nb3Sn superconducting wire production precursor and production method thereof, and Nb3Sn superconducting wire
US9834829B1 (en) 2009-07-07 2017-12-05 H.C. Starck Inc. Niobium-based alloy that is resistant to aqueous corrosion
US20110008201A1 (en) * 2009-07-07 2011-01-13 H.C. Starck Inc. Niobium based alloy that is resistant to aqueous corrosion
JP5907997B2 (en) * 2012-02-02 2016-04-26 しのはらプレスサービス株式会社 Manufacturing method of end group parts made of pure niobium with superconducting acceleration cavity
WO2014156918A1 (en) * 2013-03-27 2014-10-02 Jx日鉱日石金属株式会社 Niobium sputtering target
CN103316912B (en) * 2013-07-09 2014-12-17 武汉科技大学 Rolling method for extremely-thin niobium strip
JP7250374B2 (en) 2018-12-12 2023-04-03 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド Spherical niobium alloy powder, product containing same, and method for producing same
US11885009B2 (en) * 2019-02-12 2024-01-30 Uchicago Argonne, Llc Method of making thin films
EP3951004A4 (en) * 2019-03-26 2022-12-14 JX Nippon Mining & Metals Corporation Niobium sputtering target
CN110983218B (en) * 2019-12-25 2021-09-03 西部超导材料科技股份有限公司 Preparation method of small-size pure niobium bar with uniform structure

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3085871A (en) 1958-02-24 1963-04-16 Griffiths Kenneth Frank Method for producing the refractory metals hafnium, titanium, vanadium, silicon, zirconium, thorium, columbium, and chromium
NL252366A (en) 1958-06-13
US3110585A (en) 1959-10-21 1963-11-12 Ciba Ltd Process for the manufacture of metallic niobium or tantalum or alloys thereof
GB955832A (en) 1959-10-21 1964-04-22 Ciba Ltd Process for the manufacture of metallic niobium or tantalum or alloys thereof
US3497402A (en) 1966-02-03 1970-02-24 Nat Res Corp Stabilized grain-size tantalum alloy
CH515996A (en) 1968-06-06 1971-11-30 Starck Hermann C Fa Process for the production of high-purity niobium and / or tantalum
US3597192A (en) 1968-12-05 1971-08-03 Atomic Energy Commission Preparation of tantalum metal
DE2517180C3 (en) 1975-04-18 1979-04-19 Fa. Hermann C. Starck Berlin, 1000 Berlin Process for the continuous production of fine, high-capacity earth acid metal powder for electrolytic capacitors
US4149876A (en) 1978-06-06 1979-04-17 Fansteel Inc. Process for producing tantalum and columbium powder
JPS56145109A (en) 1980-04-12 1981-11-11 Mitsui Mining & Smelting Co Ltd Preparation of tantalum carbide or niobium carbide
JPS57106525A (en) 1980-12-19 1982-07-02 Rasa Kogyo Kk Manufacture of lithium niobate or lithium tantalate
JPS59202624A (en) 1983-04-30 1984-11-16 Sharp Corp Vaporizing source for formation of thin film
JPS6066425A (en) 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> High-purity molybdenum target and high-purity molybdenum silicide target for lsi electrode and manufacture thereof
JPS60124452A (en) 1983-12-07 1985-07-03 Hitachi Ltd Production of metallic sleeve having high purity
JPS619532A (en) 1984-06-26 1986-01-17 Daido Steel Co Ltd Manufacture of metal ingot of niobium or tantalum
JPS61146717A (en) 1984-12-18 1986-07-04 Sumitomo Chem Co Ltd Purification of tantalum
JPS61281831A (en) 1985-06-07 1986-12-12 Nippon Telegr & Teleph Corp <Ntt> Method for refining high-purity tantalum
JPS62297A (en) 1985-06-25 1987-01-06 Fuji Photo Film Co Ltd Multi-layer analytical element
LU86090A1 (en) 1985-09-23 1987-04-02 Metallurgie Hoboken PROCESS FOR PREPARING AFFINANT TANTALUM OR NIOBIUM
JPS62104180A (en) 1985-10-31 1987-05-14 Toyo Soda Mfg Co Ltd Josephson element composed by using superhighpurity niobium
JPS62108517A (en) 1985-11-06 1987-05-19 Hitachi Ltd Molecular beam source
JPS62158118A (en) 1985-12-28 1987-07-14 Chiyuugai Tekunosu Kk Production of niobium oxide
JPS62259448A (en) 1986-04-14 1987-11-11 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPH0621346B2 (en) 1986-06-11 1994-03-23 日本鉱業株式会社 Method for manufacturing high-purity metal tantalum target
JPS63216966A (en) 1987-03-06 1988-09-09 Toshiba Corp Target for sputtering
JPS6415334A (en) 1987-07-09 1989-01-19 Toho Titanium Co Ltd Production of metal from metal halide
JPS6473009A (en) 1987-09-11 1989-03-17 Showa Denko Kk Production of high purity tantalum or niobium powder
JPS6473028A (en) 1987-09-16 1989-03-17 Tosoh Corp Recovering method for high purity tantalum from scrap tantalum
JPS6475632A (en) 1987-09-18 1989-03-22 Tosoh Corp Recovering method for tantalum from scrap tantalum
US4960163A (en) 1988-11-21 1990-10-02 Aluminum Company Of America Fine grain casting by mechanical stirring
JPH0735586B2 (en) 1989-08-25 1995-04-19 住友金属工業株式会社 Colored ferritic stainless steel and manufacturing method thereof
JPH03150828A (en) 1989-11-07 1991-06-27 Nippon Chemicon Corp Manufacture of aluminum electrode for electrolytic capacitor
JP3031474B2 (en) 1989-12-26 2000-04-10 株式会社東芝 Method for manufacturing high-purity tantalum material, tantalum target, thin film, and semiconductor device
US5530467A (en) 1990-02-01 1996-06-25 Kabushiki Kaisha Toshiba Sputtering target, film resistor and thermal printer head
JPH042618A (en) 1990-04-20 1992-01-07 Nikko Kyodo Co Ltd Method for purifying potassium tantalum fluoride
JPH0421524A (en) 1990-05-15 1992-01-24 Nikko Kyodo Co Ltd Purification of potassium tantalum fluoride
DE4032566C2 (en) 1990-10-13 1993-12-16 Schott Glaswerke Lead-free optical glass with negative deviating abnormal partial dispersion
US5269403A (en) 1992-06-15 1993-12-14 Johnson Matthey Electronics Sputtering target assembly for a sputter coating apparatus
TW234767B (en) 1992-09-29 1994-11-21 Nippon En Kk
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
US5406850A (en) 1993-01-14 1995-04-18 Tosoh Smd, Inc. Method of non-destructively testing a sputtering target
JPH06264232A (en) 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ta sputtering target and its production
US5409548A (en) 1993-05-17 1995-04-25 The United States Of America As Represented By The Secretary Of The Army Ferroelectric detector array utilizing material and fabrication technique
DE4414571C1 (en) 1994-04-27 1996-01-18 Starck H C Gmbh Co Kg Tantalum@-niobium@ concentrate prepn.
US5442978A (en) 1994-05-19 1995-08-22 H. C. Starck, Inc. Tantalum production via a reduction of K2TAF7, with diluent salt, with reducing agent provided in a fast series of slug additions
US5687600A (en) 1994-10-26 1997-11-18 Johnson Matthey Electronics, Inc. Metal sputtering target assembly
US5522535A (en) 1994-11-15 1996-06-04 Tosoh Smd, Inc. Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies
JPH08165528A (en) 1994-12-09 1996-06-25 Japan Energy Corp Production of high purity refractory metal or alloy
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JP3852967B2 (en) 1995-07-14 2006-12-06 株式会社アルバック Low pressure sputtering equipment
CN1289243C (en) * 1996-11-07 2006-12-13 卡伯特公司 Niobium powders and niobium electrolytic capacitors
US6010676A (en) 1997-09-12 2000-01-04 Osram Sylvania Inc. Method for making a highly pure tantalum compound
US6323055B1 (en) 1998-05-27 2001-11-27 The Alta Group, Inc. Tantalum sputtering target and method of manufacture
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
KR100600908B1 (en) 1998-06-29 2006-07-13 가부시끼가이샤 도시바 Sputter target
DE19847012A1 (en) * 1998-10-13 2000-04-20 Starck H C Gmbh Co Kg Niobium powder and process for its manufacture
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
TW460883B (en) * 1999-02-16 2001-10-21 Showa Denko Kk Niobium powder, niobium sintered body, capacitor comprised of the sintered body, and method for manufacturing the capacitor

Also Published As

Publication number Publication date
KR100815034B1 (en) 2008-03-18
WO2001096620A3 (en) 2002-08-08
KR20030001543A (en) 2003-01-06
US6863750B2 (en) 2005-03-08
DE60136351D1 (en) 2008-12-11
CN1328409C (en) 2007-07-25
US20020072475A1 (en) 2002-06-13
WO2001096620A2 (en) 2001-12-20
JP5341292B2 (en) 2013-11-13
MY134162A (en) 2007-11-30
US20050263217A1 (en) 2005-12-01
ATE412782T1 (en) 2008-11-15
EP1287172A2 (en) 2003-03-05
TW587101B (en) 2004-05-11
JP2004511651A (en) 2004-04-15
EP1287172B1 (en) 2008-10-29
CN1449452A (en) 2003-10-15

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