JP4866836B2 - 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法 - Google Patents

接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法 Download PDF

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Publication number
JP4866836B2
JP4866836B2 JP2007504744A JP2007504744A JP4866836B2 JP 4866836 B2 JP4866836 B2 JP 4866836B2 JP 2007504744 A JP2007504744 A JP 2007504744A JP 2007504744 A JP2007504744 A JP 2007504744A JP 4866836 B2 JP4866836 B2 JP 4866836B2
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Japan
Prior art keywords
plate
ceramic body
joined
metal member
wafer
Prior art date
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Expired - Lifetime
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JP2007504744A
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English (en)
Japanese (ja)
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JPWO2006090730A1 (ja
Inventor
恒彦 中村
達也 前原
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Kyocera Corp
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Kyocera Corp
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Priority to JP2007504744A priority Critical patent/JP4866836B2/ja
Publication of JPWO2006090730A1 publication Critical patent/JPWO2006090730A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007504744A 2005-02-23 2006-02-22 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法 Expired - Lifetime JP4866836B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007504744A JP4866836B2 (ja) 2005-02-23 2006-02-22 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005047787 2005-02-23
JP2005047787 2005-02-23
JP2007504744A JP4866836B2 (ja) 2005-02-23 2006-02-22 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法
PCT/JP2006/303150 WO2006090730A1 (ja) 2005-02-23 2006-02-22 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法

Publications (2)

Publication Number Publication Date
JPWO2006090730A1 JPWO2006090730A1 (ja) 2008-07-24
JP4866836B2 true JP4866836B2 (ja) 2012-02-01

Family

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JP2007504744A Expired - Lifetime JP4866836B2 (ja) 2005-02-23 2006-02-22 接合体とウェハ保持部材及びその取付構造並びにウェハの処理方法

Country Status (4)

Country Link
US (1) US8956459B2 (https=)
JP (1) JP4866836B2 (https=)
TW (1) TW200711030A (https=)
WO (1) WO2006090730A1 (https=)

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JP5222503B2 (ja) * 2006-11-27 2013-06-26 日本碍子株式会社 セラミックス薄板体と金属薄板体とを備えるデバイス
US9013682B2 (en) 2007-06-21 2015-04-21 Asml Netherlands B.V. Clamping device and object loading method
WO2008156366A1 (en) * 2007-06-21 2008-12-24 Asml Netherlands B.V. Clamping device and object loading method
US8446566B2 (en) 2007-09-04 2013-05-21 Asml Netherlands B.V. Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method
JP2010232532A (ja) * 2009-03-27 2010-10-14 Sumitomo Electric Ind Ltd 高周波電極の接続方法を改善したウエハ保持体及びそれを搭載した半導体製造装置
JP5399771B2 (ja) * 2009-05-14 2014-01-29 株式会社ニューフレアテクノロジー 成膜装置
US20100326357A1 (en) * 2009-06-30 2010-12-30 Wei-Hung Huang Nozzle and furnace having the same
TWI422080B (zh) * 2010-08-20 2014-01-01 Txc Corp Enhanced gas - tightness of the oscillator device wafer - level package structure
US20120214016A1 (en) * 2011-02-22 2012-08-23 General Electric Company Constrained metal flanges and methods for making the same
US9915475B2 (en) * 2011-04-12 2018-03-13 Jiaxiong Wang Assembled reactor for fabrications of thin film solar cell absorbers through roll-to-roll processes
US8519532B2 (en) * 2011-09-12 2013-08-27 Infineon Technologies Ag Semiconductor device including cladded base plate
US8963321B2 (en) 2011-09-12 2015-02-24 Infineon Technologies Ag Semiconductor device including cladded base plate
TWI470730B (zh) * 2012-09-18 2015-01-21 Asia Pacific Microsystems Inc Wafer holding device
TWI627305B (zh) * 2013-03-15 2018-06-21 Applied Materials, Inc. 用於轉盤處理室之具有剛性板的大氣蓋
JP6105746B2 (ja) * 2013-11-12 2017-03-29 京セラ株式会社 試料保持具
WO2015146563A1 (ja) * 2014-03-27 2015-10-01 日本碍子株式会社 セラミックスプレートと金属製の円筒部材との接合構造
JP6525791B2 (ja) * 2015-07-28 2019-06-05 京セラ株式会社 試料保持具およびこれを備えた試料処理装置
JP6545601B2 (ja) * 2015-10-23 2019-07-17 アキレス株式会社 セパレータ
JP6328697B2 (ja) * 2016-07-19 2018-05-23 日本特殊陶業株式会社 セラミック−金属構造体
US11011355B2 (en) * 2017-05-12 2021-05-18 Lam Research Corporation Temperature-tuned substrate support for substrate processing systems
CN112534705B (zh) * 2019-04-16 2024-11-12 日本特殊陶业株式会社 保持装置及其制造方法、保持装置用的构造体的制造方法
KR102814220B1 (ko) * 2020-08-21 2025-05-28 니혼도꾸슈도교 가부시키가이샤 접합체, 유지 장치, 및 정전 척
DE102022127528A1 (de) * 2022-10-19 2024-04-25 Vat Holding Ag Heizvorrichtung

Citations (7)

* Cited by examiner, † Cited by third party
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JPH09262734A (ja) * 1996-03-27 1997-10-07 Kyocera Corp ウェハ保持装置
JP2001257144A (ja) * 2000-03-09 2001-09-21 Tokyo Electron Ltd 基板の加熱処理装置
JP2002121083A (ja) * 2000-10-10 2002-04-23 Kyocera Corp セラミック部材と金属部材の接合体及びこれを用いたウエハ支持部材
JP2002299432A (ja) * 2001-03-30 2002-10-11 Ngk Insulators Ltd セラミックサセプターの支持構造
JP2002356382A (ja) * 2001-05-31 2002-12-13 Kyocera Corp 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材
JP2003243310A (ja) * 2002-02-18 2003-08-29 Toshiba Ceramics Co Ltd 高温熱処理用ウェーハボート支え治具
JP2005032898A (ja) * 2003-07-10 2005-02-03 Ngk Insulators Ltd セラミックサセプターの支持構造

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JPS6015305U (ja) * 1983-07-12 1985-02-01 日本電気株式会社 小児専用ｘ線診断装置の補助寝台
DE3434004C2 (de) 1984-09-15 1987-03-26 Dornier System Gmbh, 7990 Friedrichshafen Verfahren und Vorrichtung zur Müllvergasung
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JP3622353B2 (ja) 1996-07-12 2005-02-23 東陶機器株式会社 静電チャックステージ及びその製造方法
US6120609A (en) * 1996-10-25 2000-09-19 Applied Materials, Inc. Self-aligning lift mechanism
US6372048B1 (en) * 1997-06-09 2002-04-16 Tokyo Electron Limited Gas processing apparatus for object to be processed
JP3389484B2 (ja) 1997-11-28 2003-03-24 京セラ株式会社 窒化アルミニウム接合構造体とその製造方法
JP4641569B2 (ja) * 1998-07-24 2011-03-02 日本碍子株式会社 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置
JP3512650B2 (ja) 1998-09-30 2004-03-31 京セラ株式会社 加熱装置
JP4021575B2 (ja) 1999-01-28 2007-12-12 日本碍子株式会社 セラミックス部材と金属部材との接合体およびその製造方法
JP2002025913A (ja) 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
JP4009100B2 (ja) * 2000-12-28 2007-11-14 東京エレクトロン株式会社 基板加熱装置および基板加熱方法
KR100422452B1 (ko) * 2002-06-18 2004-03-11 삼성전자주식회사 로드락 챔버용 스토리지 엘리베이터 샤프트의 실링장치
JP4060684B2 (ja) * 2002-10-29 2008-03-12 日本発条株式会社 ステージ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09262734A (ja) * 1996-03-27 1997-10-07 Kyocera Corp ウェハ保持装置
JP2001257144A (ja) * 2000-03-09 2001-09-21 Tokyo Electron Ltd 基板の加熱処理装置
JP2002121083A (ja) * 2000-10-10 2002-04-23 Kyocera Corp セラミック部材と金属部材の接合体及びこれを用いたウエハ支持部材
JP2002299432A (ja) * 2001-03-30 2002-10-11 Ngk Insulators Ltd セラミックサセプターの支持構造
JP2002356382A (ja) * 2001-05-31 2002-12-13 Kyocera Corp 窒化アルミニウム質焼結体とＦｅ−Ｎｉ−Ｃｏ合金とのロウ付け接合体及びウエハ支持部材
JP2003243310A (ja) * 2002-02-18 2003-08-29 Toshiba Ceramics Co Ltd 高温熱処理用ウェーハボート支え治具
JP2005032898A (ja) * 2003-07-10 2005-02-03 Ngk Insulators Ltd セラミックサセプターの支持構造

Also Published As

Publication number Publication date
US20090130825A1 (en) 2009-05-21
US8956459B2 (en) 2015-02-17
TW200711030A (en) 2007-03-16
WO2006090730A1 (ja) 2006-08-31
JPWO2006090730A1 (ja) 2008-07-24
TWI312548B (https=) 2009-07-21

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