JP4851075B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4851075B2
JP4851075B2 JP2004246783A JP2004246783A JP4851075B2 JP 4851075 B2 JP4851075 B2 JP 4851075B2 JP 2004246783 A JP2004246783 A JP 2004246783A JP 2004246783 A JP2004246783 A JP 2004246783A JP 4851075 B2 JP4851075 B2 JP 4851075B2
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semiconductor device
groove
conductivity type
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Japanese (ja)
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JP2006066606A5 (cg-RX-API-DMAC7.html
JP2006066606A (ja
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伸治 九里
瑞枝 北田
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004246783A 2004-08-26 2004-08-26 半導体装置の製造方法 Expired - Fee Related JP4851075B2 (ja)

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JP2004246783A JP4851075B2 (ja) 2004-08-26 2004-08-26 半導体装置の製造方法

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JP2004246783A JP4851075B2 (ja) 2004-08-26 2004-08-26 半導体装置の製造方法

Publications (3)

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JP2006066606A JP2006066606A (ja) 2006-03-09
JP2006066606A5 JP2006066606A5 (cg-RX-API-DMAC7.html) 2006-07-20
JP4851075B2 true JP4851075B2 (ja) 2012-01-11

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JP2004246783A Expired - Fee Related JP4851075B2 (ja) 2004-08-26 2004-08-26 半導体装置の製造方法

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4595144B2 (ja) * 1999-09-21 2010-12-08 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP4924781B2 (ja) * 1999-10-13 2012-04-25 株式会社豊田中央研究所 縦型半導体装置
JP4528460B2 (ja) * 2000-06-30 2010-08-18 株式会社東芝 半導体素子
JP3539417B2 (ja) * 2001-11-14 2004-07-07 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
JP3914852B2 (ja) * 2002-04-09 2007-05-16 新電元工業株式会社 ダイオード素子とトランジスタ素子
JP4133565B2 (ja) * 2002-06-05 2008-08-13 新電元工業株式会社 トランジスタとその製造方法、及びダイオード
JP3966151B2 (ja) * 2002-10-10 2007-08-29 富士電機デバイステクノロジー株式会社 半導体素子

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