JP4846600B2 - マイクロリソグラフィ投射露光装置用照射システム - Google Patents

マイクロリソグラフィ投射露光装置用照射システム Download PDF

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Publication number
JP4846600B2
JP4846600B2 JP2006552571A JP2006552571A JP4846600B2 JP 4846600 B2 JP4846600 B2 JP 4846600B2 JP 2006552571 A JP2006552571 A JP 2006552571A JP 2006552571 A JP2006552571 A JP 2006552571A JP 4846600 B2 JP4846600 B2 JP 4846600B2
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Prior art keywords
raster element
optical raster
optical
microlenses
pupil plane
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Expired - Fee Related
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Japanese (ja)
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JP2007525027A (ja
JP2007525027A5 (enExample
Inventor
フィオルカ，ダミアン
マウル，マンフレッド・
ショルツ，アクセル
デギュンタ，マルクス
ワングラー，ヨハンス
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/54—Lamp housings; Illuminating means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006552571A 2004-02-17 2005-02-15 マイクロリソグラフィ投射露光装置用照射システム Expired - Fee Related JP4846600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54510504P 2004-02-17 2004-02-17
US60/545,105 2004-02-17
PCT/EP2005/001501 WO2005078522A2 (en) 2004-02-17 2005-02-15 Illumination system for a microlithographic projection exposure apparatus

Publications (3)

Publication Number Publication Date
JP2007525027A JP2007525027A (ja) 2007-08-30
JP2007525027A5 JP2007525027A5 (enExample) 2008-04-03
JP4846600B2 true JP4846600B2 (ja) 2011-12-28

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JP2006552571A Expired - Fee Related JP4846600B2 (ja) 2004-02-17 2005-02-15 マイクロリソグラフィ投射露光装置用照射システム

Country Status (6)

Country Link
US (2) US8004656B2 (enExample)
EP (1) EP1716458B1 (enExample)
JP (1) JP4846600B2 (enExample)
KR (1) KR101170182B1 (enExample)
AT (1) ATE511668T1 (enExample)
WO (1) WO2005078522A2 (enExample)

Families Citing this family (26)

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JP4846600B2 (ja) 2004-02-17 2011-12-28 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投射露光装置用照射システム
TWI545352B (zh) * 2006-02-17 2016-08-11 卡爾蔡司Ｓｍｔ有限公司 用於微影投射曝光設備之照明系統
WO2007093433A1 (de) 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem
KR101306503B1 (ko) 2006-02-17 2013-09-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템용 광 인터그레이터
DE102007023411A1 (de) * 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
WO2008086827A1 (en) 2007-01-16 2008-07-24 Carl Zeiss Smt Ag Projection exposure method and projection exposure system therefor
JP2008182244A (ja) * 2007-01-25 2008-08-07 Carl Zeiss Smt Ag マイクロリソグラフ投影露光装置の照明系用光インテグレータ
DE102008006637A1 (de) 2007-01-25 2008-07-31 Carl Zeiss Smt Ag Optischer Integrator für ein Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage
WO2008094141A1 (en) 2007-01-29 2008-08-07 Celloptic, Inc. System, apparatus and method for extracting image cross-sections of an object from received electromagnetic radiation
JP5345132B2 (ja) * 2007-04-25 2013-11-20 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ露光装置においてマスクを照明するための照明系
EP2146248B1 (en) 2008-07-16 2012-08-29 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
DE102008036569A1 (de) * 2008-07-31 2009-10-22 Carl Zeiss Laser Optics Gmbh Wabenkondensor und Vorrichtung zum Aufschmelzen von Schichten auf ein Substrat
EP2169464A1 (en) 2008-09-29 2010-03-31 Carl Zeiss SMT AG Illumination system of a microlithographic projection exposure apparatus
EP2317386B1 (en) 2008-12-23 2012-07-11 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
JP5587917B2 (ja) 2009-03-13 2014-09-10 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置
KR101646814B1 (ko) 2009-03-19 2016-08-08 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
US8164046B2 (en) 2009-07-16 2012-04-24 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic projection exposure apparatus
KR101373380B1 (ko) 2009-07-17 2014-03-13 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치 및 그에 포함된 광학 표면에 관한 파라미터의 측정 방법
EP2354853B1 (en) 2010-02-09 2013-01-02 Carl Zeiss SMT GmbH Optical raster element, optical integrator and illumination system of a microlithographic projection exposure apparatus
DE102013204443A1 (de) * 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optische Baugruppe zur Lichtleitwerterhöhung
US8875066B2 (en) * 2013-03-15 2014-10-28 Synopsys, Inc. Performing image calculation based on spatial coherence
CN103412465B (zh) 2013-07-01 2015-04-15 中国科学院上海光学精密机械研究所 步进扫描投影光刻机的照明系统
WO2017108448A1 (en) * 2015-12-22 2017-06-29 Carl Zeiss Smt Gmbh Illumination system of a microlithographic apparatus
CN105589300A (zh) * 2016-01-07 2016-05-18 中国科学院上海光学精密机械研究所 一种光刻照明系统
US10823531B2 (en) * 2017-02-09 2020-11-03 Lightforce Usa, Inc. Reticle disc with fiber illuminated aiming dot
CN114127617A (zh) * 2019-07-23 2022-03-01 埃博茨股份有限公司 用于具有高精度和实时对象跟踪的3d姿态测量的系统和方法

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US8730455B2 (en) 2014-05-20
EP1716458B1 (en) 2011-06-01
KR20060123538A (ko) 2006-12-01
JP2007525027A (ja) 2007-08-30
US8004656B2 (en) 2011-08-23
WO2005078522A3 (en) 2006-03-02
EP1716458A2 (en) 2006-11-02
US20110285978A1 (en) 2011-11-24
KR101170182B1 (ko) 2012-08-01
WO2005078522A2 (en) 2005-08-25
US20070206171A1 (en) 2007-09-06

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