JP4845309B2 - レーザアニール方法及び半導体装置の作製方法 - Google Patents

レーザアニール方法及び半導体装置の作製方法 Download PDF

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Publication number
JP4845309B2
JP4845309B2 JP2001398600A JP2001398600A JP4845309B2 JP 4845309 B2 JP4845309 B2 JP 4845309B2 JP 2001398600 A JP2001398600 A JP 2001398600A JP 2001398600 A JP2001398600 A JP 2001398600A JP 4845309 B2 JP4845309 B2 JP 4845309B2
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film
laser
substrate
semiconductor film
light
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JP2002289524A5 (cg-RX-API-DMAC10.html
JP2002289524A (ja
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幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
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JP2001398600A 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法 Expired - Fee Related JP4845309B2 (ja)

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JP2001398600A JP4845309B2 (ja) 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法

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JP2000399462 2000-12-27
JP2000-399462 2000-12-27
JP2000399462 2000-12-27
JP2001398600A JP4845309B2 (ja) 2000-12-27 2001-12-27 レーザアニール方法及び半導体装置の作製方法

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JP2002289524A JP2002289524A (ja) 2002-10-04
JP2002289524A5 JP2002289524A5 (cg-RX-API-DMAC10.html) 2005-07-28
JP4845309B2 true JP4845309B2 (ja) 2011-12-28

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG108878A1 (en) 2001-10-30 2005-02-28 Semiconductor Energy Lab Laser irradiation method and laser irradiation apparatus, and method for fabricating semiconductor device
JP4762121B2 (ja) * 2001-11-16 2011-08-31 株式会社半導体エネルギー研究所 レーザ照射方法、及び半導体装置の作製方法
JP2004128421A (ja) 2002-10-07 2004-04-22 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP4515034B2 (ja) 2003-02-28 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE602004020538D1 (de) 2003-02-28 2009-05-28 Semiconductor Energy Lab Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter.
JP4799825B2 (ja) * 2003-03-03 2011-10-26 株式会社半導体エネルギー研究所 レーザ照射方法
US7304005B2 (en) * 2003-03-17 2007-12-04 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
JP4860116B2 (ja) * 2003-03-17 2012-01-25 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP2005079312A (ja) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置
JP6615658B2 (ja) 2016-03-16 2019-12-04 株式会社ブイ・テクノロジー マスク及び薄膜トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890723A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp レ−ザビ−ム照射による物性変化方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JPH11162868A (ja) * 1997-12-02 1999-06-18 Toshiba Corp レ−ザ照射装置
JP3504528B2 (ja) * 1999-03-18 2004-03-08 株式会社日本製鋼所 レーザ光照射装置

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