JP4845284B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4845284B2 JP4845284B2 JP2001135769A JP2001135769A JP4845284B2 JP 4845284 B2 JP4845284 B2 JP 4845284B2 JP 2001135769 A JP2001135769 A JP 2001135769A JP 2001135769 A JP2001135769 A JP 2001135769A JP 4845284 B2 JP4845284 B2 JP 4845284B2
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- 239000004065 semiconductor Substances 0.000 title claims description 269
- 230000015654 memory Effects 0.000 claims description 341
- 239000000758 substrate Substances 0.000 claims description 240
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 38
- 230000006870 function Effects 0.000 claims description 22
- 239000010408 film Substances 0.000 description 148
- 238000000034 method Methods 0.000 description 80
- 239000010410 layer Substances 0.000 description 78
- 239000011159 matrix material Substances 0.000 description 78
- 239000004973 liquid crystal related substance Substances 0.000 description 65
- 239000012535 impurity Substances 0.000 description 51
- 238000010586 diagram Methods 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 31
- 239000003990 capacitor Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000007667 floating Methods 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 11
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 239000011574 phosphorus Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000000565 sealant Substances 0.000 description 9
- 239000003566 sealing material Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000001994 activation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 241000237509 Patinopecten sp. Species 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910001362 Ta alloys Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 235000020637 scallop Nutrition 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001135769A JP4845284B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000139458 | 2000-05-12 | ||
| JP2000139458 | 2000-05-12 | ||
| JP2000-139458 | 2000-05-12 | ||
| JP2001135769A JP4845284B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011158972A Division JP5613632B2 (ja) | 2000-05-12 | 2011-07-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002091332A JP2002091332A (ja) | 2002-03-27 |
| JP2002091332A5 JP2002091332A5 (enExample) | 2008-06-19 |
| JP4845284B2 true JP4845284B2 (ja) | 2011-12-28 |
Family
ID=26591741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001135769A Expired - Fee Related JP4845284B2 (ja) | 2000-05-12 | 2001-05-07 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4845284B2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004138958A (ja) | 2002-10-21 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US7541614B2 (en) * | 2003-03-11 | 2009-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same |
| CN1809869B (zh) * | 2003-06-30 | 2011-04-20 | 瑞萨电子株式会社 | 驱动器及其显示设备 |
| JP4533616B2 (ja) * | 2003-10-17 | 2010-09-01 | 株式会社 日立ディスプレイズ | 表示装置 |
| JP2005208455A (ja) * | 2004-01-26 | 2005-08-04 | Nec Corp | 携帯端末装置およびその情報表示方法 |
| WO2006041035A1 (ja) * | 2004-10-13 | 2006-04-20 | Rohm Co., Ltd | 有機ｅｌ駆動回路および有機ｅｌ表示装置 |
| JP5084134B2 (ja) | 2005-11-21 | 2012-11-28 | 日本電気株式会社 | 表示装置及びこれらを用いた機器 |
| JP5217500B2 (ja) * | 2008-02-28 | 2013-06-19 | ソニー株式会社 | Ｅｌ表示パネルモジュール、ｅｌ表示パネル、集積回路装置、電子機器及び駆動制御方法 |
| JP5664146B2 (ja) * | 2010-11-10 | 2015-02-04 | セイコーエプソン株式会社 | 情報表示端末 |
| US9379254B2 (en) | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
| TWI639150B (zh) * | 2011-11-30 | 2018-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置 |
| JP5403469B2 (ja) * | 2011-12-26 | 2014-01-29 | Ｎｌｔテクノロジー株式会社 | 表示装置及びこれらを用いた機器 |
| JP6143114B2 (ja) * | 2015-03-09 | 2017-06-07 | Ｎｌｔテクノロジー株式会社 | 表示装置 |
| TWI749442B (zh) * | 2020-01-06 | 2021-12-11 | 力晶積成電子製造股份有限公司 | 半導體封裝 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07209672A (ja) * | 1993-12-03 | 1995-08-11 | Semiconductor Energy Lab Co Ltd | 非発光型ディスプレーを有する電子装置 |
| JP3207693B2 (ja) * | 1994-12-13 | 2001-09-10 | シャープ株式会社 | 画像表示装置 |
| JP4294118B2 (ja) * | 1997-08-19 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 表示装置および表示装置の作製方法 |
| JPH11160734A (ja) * | 1997-11-28 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
| JP3436478B2 (ja) * | 1998-01-12 | 2003-08-11 | 株式会社日立製作所 | 液晶表示装置および計算機システム |
| JPH11338427A (ja) * | 1998-05-22 | 1999-12-10 | Fujitsu Ltd | 表示装置 |
| JP2000010111A (ja) * | 1998-06-19 | 2000-01-14 | Sharp Corp | 電極基板の製造方法 |
-
2001
- 2001-05-07 JP JP2001135769A patent/JP4845284B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002091332A (ja) | 2002-03-27 |
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