JP4831992B2 - 透光性樹脂組成物 - Google Patents
透光性樹脂組成物 Download PDFInfo
- Publication number
- JP4831992B2 JP4831992B2 JP2005112131A JP2005112131A JP4831992B2 JP 4831992 B2 JP4831992 B2 JP 4831992B2 JP 2005112131 A JP2005112131 A JP 2005112131A JP 2005112131 A JP2005112131 A JP 2005112131A JP 4831992 B2 JP4831992 B2 JP 4831992B2
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- resin composition
- light
- resin
- epoxy resin
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XFUOBHWPTSIEOV-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) cyclohexane-1,2-dicarboxylate Chemical compound C1CCCC(C(=O)OCC2OC2)C1C(=O)OCC1CO1 XFUOBHWPTSIEOV-UHFFFAOYSA-N 0.000 description 1
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- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- XBZSBBLNHFMTEB-UHFFFAOYSA-N cyclohexane-1,3-dicarboxylic acid Chemical compound OC(=O)C1CCCC(C(O)=O)C1 XBZSBBLNHFMTEB-UHFFFAOYSA-N 0.000 description 1
- 150000001934 cyclohexanes Chemical class 0.000 description 1
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- GWZCCUDJHOGOSO-UHFFFAOYSA-N diphenic acid Chemical compound OC(=O)C1=CC=CC=C1C1=CC=CC=C1C(O)=O GWZCCUDJHOGOSO-UHFFFAOYSA-N 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
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- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Chemical & Material Sciences (AREA)
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- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Adhesives Or Adhesive Processes (AREA)
Description
上記式で定義される末端に脂環式エポキシ基を有するシロキサン誘導体の具体例としては、下式に示されるものを挙げることができる。
かかる脂環式エポキシ基を有するシロキサン誘導体を脂環式エポキシ樹脂として用いて透光性エポキシ樹脂組成物を形成すると、エポキシ樹脂組成物を例えばモールド樹脂などとして硬化させる際に、加熱温度が低くても硬化させることができ、また硬化速度が速いという利点が得られる。加えて、かかる脂環式エポキシ基を有するシロキサン誘導体を脂環式エポキシ樹脂として用いて樹脂組成物を形成すると、発光素子に対する密着性が良好になり、更に硬化した樹脂組成物の強度が非常に高くなるという利点も得られる。
具体的には、酸無水物としては、例えば、プロピオン酸無水物、無水コハク酸、1,2−シクロヘキサンジカルボン酸無水物、3−メチル−1,2シクロヘキサンジカルボン酸無水物、4−メチル−1,2シクロヘキサンジカルボン酸無水物、無水フタル酸、4,4’−ビ無水フタル酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、トリアルキルテトラヒドロ無水フタル酸、水素化メチルナジック酸無水物などを用いることができる。また、ジカルボン酸としては、例えば、4,4’−ビフェニルジカルボン酸、2,2’−ビフェニルジカルボン酸、シュウ酸、コハク酸、アジピン酸、1,6−ヘキサンジカルボン酸、1,2−シクロヘキサンジカルボン酸、1,3−シクロヘキサンジカルボン酸、1,4−シクロヘキサンジカルボン酸、o−フタル酸、m−フタル酸、p−フタル酸などを用いることができる。
本発明に係る透光性エポキシ樹脂組成物は、熱による変色が極めて少ないと共に、光の照射による変色も極めて少ないため、光の照射による黄変が問題となる用途、例えば、半導体発光素子を用いた発光ダイオード装置における封止樹脂、接着剤、ポッテイング樹脂、モールド樹脂などとして用いることができ、特に、青色発光ダイオードや白色発光ダイオードなどの封止樹脂などとして極めて好ましく用いることができる。
エポキシ樹脂としてシクロヘキセンエポキシ化物誘導体(ダイセル化学工業株式会社製、商品名CELOXIDE−2021)、ジカルボン酸としてヘキサヒドロフタル酸無水物のポリアルキレングリコール誘導体(新日本理化社製、商品名リカシッドHF−08)、アルミニウムキレート化合物としてエチルアセトアセテートアルミニウムジイソプロピレート(川研ファインケミカル社製のALCH−50F)を、それぞれ表1に示す量比で配合して透光性エポキシ樹脂組成物を調製した。配合されたエポキシ樹脂組成物を、150℃で120分間加熱することによって硬化させた。硬化した樹脂組成物を、紫外線照射試験及び耐熱試験にかけた。結果を表1に示す。紫外線照射試験では、Q−PANEL LABORATORY社製のUVB−313ランプ(0.8W/m2/nm)を用いて、硬化樹脂組成物を500時間照射した後の、波長450nmの光の透過率の残存率(照射前の透過率を100とした相対値)を求めた。耐熱試験では、硬化樹脂組成物を120℃の雰囲気中に500時間放置した後の、波長450nmの光の透過率の残存率(加熱前の透過率を100とした相対値)を求めた。
Claims (4)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005112131A JP4831992B2 (ja) | 2005-04-08 | 2005-04-08 | 透光性樹脂組成物 |
TW095112690A TW200704667A (en) | 2005-04-08 | 2006-04-10 | Transparent resin composition |
PCT/JP2006/307560 WO2006109768A1 (ja) | 2005-04-08 | 2006-04-10 | 透光性樹脂組成物 |
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JP2005112131A JP4831992B2 (ja) | 2005-04-08 | 2005-04-08 | 透光性樹脂組成物 |
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JP2006290998A JP2006290998A (ja) | 2006-10-26 |
JP4831992B2 true JP4831992B2 (ja) | 2011-12-07 |
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JP2005112131A Expired - Fee Related JP4831992B2 (ja) | 2005-04-08 | 2005-04-08 | 透光性樹脂組成物 |
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JP (1) | JP4831992B2 (ja) |
TW (1) | TW200704667A (ja) |
WO (1) | WO2006109768A1 (ja) |
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WO2008153076A1 (ja) * | 2007-06-14 | 2008-12-18 | Sekisui Chemical Co., Ltd. | 基板貼り合わせ用光学接着剤、及び、基板貼り合わせ用光学接着剤硬化体 |
JP5070107B2 (ja) * | 2008-03-31 | 2012-11-07 | ナミックス株式会社 | エポキシ樹脂組成物 |
JP5193685B2 (ja) * | 2008-05-30 | 2013-05-08 | ナミックス株式会社 | Led用導電性ダイボンディング剤 |
JP5210122B2 (ja) * | 2008-10-31 | 2013-06-12 | 昭和電工株式会社 | 接着剤用硬化性組成物 |
JP5186459B2 (ja) * | 2009-09-29 | 2013-04-17 | ナミックス株式会社 | エポキシ樹脂組成物 |
JP5698453B2 (ja) * | 2009-11-10 | 2015-04-08 | 日本化薬株式会社 | エポキシ樹脂組成物 |
KR20120114237A (ko) * | 2009-11-30 | 2012-10-16 | 닛뽄 가야쿠 가부시키가이샤 | 경화성 수지 조성물 및 그 경화물 |
WO2011065365A1 (ja) * | 2009-11-30 | 2011-06-03 | ナミックス株式会社 | 半導体封止用エポキシ樹脂組成物および半導体装置 |
KR20140043735A (ko) * | 2011-05-31 | 2014-04-10 | 미츠비시 가스 가가쿠 가부시키가이샤 | 수지 조성물, 그리고 이것을 사용한 프리프레그 및 금속박 피복 적층판 |
WO2013137257A1 (ja) * | 2012-03-13 | 2013-09-19 | 三菱瓦斯化学株式会社 | 樹脂組成物、プリプレグ及び金属箔張積層板 |
JP6047294B2 (ja) * | 2012-03-30 | 2016-12-21 | 株式会社ダイセル | 硬化性エポキシ樹脂組成物 |
JP2015086376A (ja) * | 2013-09-26 | 2015-05-07 | 株式会社ダイセル | 硬化性エポキシ樹脂組成物 |
JP6456836B2 (ja) * | 2013-10-16 | 2019-01-23 | 日本化薬株式会社 | 硬化性樹脂組成物およびその硬化物 |
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JPH059268A (ja) * | 1991-07-02 | 1993-01-19 | Toshiba Chem Corp | 光半導体封止用エポキシ樹脂組成物 |
JPH06100762A (ja) * | 1992-09-21 | 1994-04-12 | Nippon Kayaku Co Ltd | エポキシ樹脂組成物 |
JPH0725987A (ja) * | 1993-07-14 | 1995-01-27 | Nitto Denko Corp | 光半導体封止用エポキシ樹脂組成物 |
JP3795491B2 (ja) * | 2003-12-15 | 2006-07-12 | 京セラケミカル株式会社 | 光半導体封止用樹脂組成物および光半導体装置 |
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