JP4828534B2 - センサ素子 - Google Patents
センサ素子 Download PDFInfo
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- JP4828534B2 JP4828534B2 JP2007526292A JP2007526292A JP4828534B2 JP 4828534 B2 JP4828534 B2 JP 4828534B2 JP 2007526292 A JP2007526292 A JP 2007526292A JP 2007526292 A JP2007526292 A JP 2007526292A JP 4828534 B2 JP4828534 B2 JP 4828534B2
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- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 230000005670 electromagnetic radiation Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 description 27
- 239000000463 material Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- -1 frame Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
- G01J5/14—Electrical features thereof
- G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Description
図1は、本発明が適用可能なセンサ素子を示す。センサ素子10は、サーモパイルを備え、該サーモパイルは、直列に接続された複数の冷接点および熱接点を含んでもよい。冷接点には符号4bを付し、熱接点には符号4bを付す。熱接点4a上に吸収層5aを設け、冷接点4b上に反射層5bを設けることができる。対象物の対象物温度Toに応じて発生し、出射される赤外線IR(To)は、吸収層5aによって吸収される。反射層5bは、放射線を反射する。このように、入射する放射線によって行われる加熱は、熱端部4aにおいては促進されるが、冷端部においては抑制される。熱端部および冷端部は、フレーム1の開口部2の上方であって、開口部2を覆う薄膜3上に設けられる。図1に示すセンサ素子の断面の寸法は、数ミリメートルであればよい。フレームの高さは、数百マイクロメートルであればよい。まず、各センサ素子の概略を説明する。
・特に、1または複数のセンサ素子に関し、外部に送信して使用されるべき測定値、中間結果、および/または保存されていた以前の補正データのためのメモリ、ならびに/もしくは、
・線形化および/またはインピーダンス変換および/または増幅など、好ましくはポートを介して調節可能な信号発生用または較正用の回路、ならびに/もしくは、
・信号処理(たとえば、周辺温度の補償、空間分解能がある場合のパターン認識など)のための信号処理部、ならびに/もしくは、
・特に、多素子センサにおける並列変換/直列変換部、ならびに/もしくは、
・参照素子37に関する信号発生器および/または信号処理部および/または信号出力部、ならびに/もしくは、
・I2Cインターフェースなど、特にデジタルで外部と接続されるデータインターフェース、ならびに/もしくは、
・適切な数のポート。
Claims (6)
- 開口部(2)を囲むフレーム(1)と、開口部(2)の上方に設けられる薄膜(3)とを含む基板(1〜3)と、
前記基板(1〜3)に設けられる1または複数の感熱部(4a,4b)であって、熱接点(4a)および冷接点(4b)を含む感熱部(4a,4b)と、
検出される電磁放射線の吸収および/または反射に作用する1または複数の作用層(5a,5b)とを含むセンサ素子(10)において、
前記感熱部(4a,4b)の熱接点(4a)および冷接点(4b)は、いずれも薄膜(3)上であって、フレーム(1)の開口部(2)の上方に設けられ、フレーム(1)の開口部(2)の対称軸(7a,7b)または対称点(7c)に関して非対称となるように、かつ、冷接点(4b)とフレーム(1)との間の平均距離が、熱接点(4a)とフレーム(1)との間の平均距離よりも長くなるように、配置されることを特徴とする、赤外領域にある電磁放射線を検出するセンサ素子(10)。 - 作用層(5a,5b)は、1または複数の熱接点(4a)の上方に設けられる吸収層(5a)、および1または複数の冷接点(4b)の上方に設けられる反射層(5b)を含むことを特徴とする、請求項1に記載のセンサ素子(10)。
- 吸収層(5a)の下方に設けられ、10W/m/Kより大きな熱伝導率を有する補償層(8)を含むことを特徴とする、請求項2に記載のセンサ素子(10)。
- 1層の反射層(5b)に熱伝導バリアを含むことを特徴とする、請求項2に記載のセンサ素子(10)。
- 熱伝導バリアは、反射層(5b)の細長い穴であることを特徴とする、請求項4に記載のセンサ素子(10)。
- 請求項1〜5のいずれか1項に記載のセンサ素子(10)を含むセンサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004028032A DE102004028032B4 (de) | 2004-06-09 | 2004-06-09 | Sensorelement |
DE102004028032.0 | 2004-06-09 | ||
PCT/EP2005/006159 WO2005121728A2 (de) | 2004-06-09 | 2005-06-08 | Sensorelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008501964A JP2008501964A (ja) | 2008-01-24 |
JP4828534B2 true JP4828534B2 (ja) | 2011-11-30 |
Family
ID=34981329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007526292A Active JP4828534B2 (ja) | 2004-06-09 | 2005-06-08 | センサ素子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8215831B2 (ja) |
EP (1) | EP1766354B1 (ja) |
JP (1) | JP4828534B2 (ja) |
CN (1) | CN1985158B (ja) |
DE (1) | DE102004028032B4 (ja) |
WO (1) | WO2005121728A2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005041050B4 (de) | 2005-08-30 | 2007-09-06 | Perkinelmer Optoelectronics Gmbh & Co.Kg | Verfahren und Vorrichtung zur Korrektur des Ausgangssignals eines Strahlungssensors und zur Messung von Strahlung |
US20100219341A1 (en) * | 2008-08-27 | 2010-09-02 | Heetronix | Power and energy meter for measuring electromagnetic radiation |
US8544089B2 (en) | 2009-08-17 | 2013-09-24 | Fatskunk, Inc. | Auditing a device |
US8949989B2 (en) | 2009-08-17 | 2015-02-03 | Qualcomm Incorporated | Auditing a device |
DE102009045302A1 (de) * | 2009-10-02 | 2011-04-07 | Robert Bosch Gmbh | Mikrostrukturierter Sensor zur Detektion von IR-Strahlung |
US8441093B2 (en) * | 2011-04-15 | 2013-05-14 | Excelitas Technologies Singapore Pte. Ltd. | Shared membrane thermopile sensor array |
JP6131520B2 (ja) * | 2012-02-06 | 2017-05-24 | 三菱マテリアル株式会社 | 赤外線センサ装置 |
US10203252B2 (en) | 2016-12-29 | 2019-02-12 | Industrial Technology Research Institute | Microelectromechanical apparatus having a measuring range selector |
WO2021006034A1 (ja) * | 2019-07-05 | 2021-01-14 | 住友電気工業株式会社 | 光センサ |
Citations (8)
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JPS5945536U (ja) * | 1982-09-20 | 1984-03-26 | 株式会社堀場製作所 | サ−モパイル型輻射温度検出器 |
JPH06137942A (ja) * | 1992-10-29 | 1994-05-20 | Murata Mfg Co Ltd | 赤外線検出器 |
JPH09133578A (ja) * | 1995-11-08 | 1997-05-20 | Nissan Motor Co Ltd | 赤外線検出素子 |
JPH09257584A (ja) * | 1996-03-27 | 1997-10-03 | Nissan Motor Co Ltd | 熱型赤外線検知装置 |
JP2000214046A (ja) * | 1999-01-25 | 2000-08-04 | Nikon Corp | 光学素子の評価方法 |
JP2001527644A (ja) * | 1997-03-15 | 2001-12-25 | ブラウン ゲーエムベーハー | サーモパイル・センサ及びサーモパイル・センサを備えた輻射温度計 |
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-
2004
- 2004-06-09 DE DE102004028032A patent/DE102004028032B4/de not_active Expired - Lifetime
-
2005
- 2005-06-08 CN CN2005800187074A patent/CN1985158B/zh active Active
- 2005-06-08 JP JP2007526292A patent/JP4828534B2/ja active Active
- 2005-06-08 WO PCT/EP2005/006159 patent/WO2005121728A2/de active Application Filing
- 2005-06-08 EP EP05748460.2A patent/EP1766354B1/de active Active
- 2005-06-08 US US11/570,305 patent/US8215831B2/en active Active
Patent Citations (8)
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JPS5945536U (ja) * | 1982-09-20 | 1984-03-26 | 株式会社堀場製作所 | サ−モパイル型輻射温度検出器 |
JPH06137942A (ja) * | 1992-10-29 | 1994-05-20 | Murata Mfg Co Ltd | 赤外線検出器 |
JPH09133578A (ja) * | 1995-11-08 | 1997-05-20 | Nissan Motor Co Ltd | 赤外線検出素子 |
JPH09257584A (ja) * | 1996-03-27 | 1997-10-03 | Nissan Motor Co Ltd | 熱型赤外線検知装置 |
JP2001527644A (ja) * | 1997-03-15 | 2001-12-25 | ブラウン ゲーエムベーハー | サーモパイル・センサ及びサーモパイル・センサを備えた輻射温度計 |
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Also Published As
Publication number | Publication date |
---|---|
JP2008501964A (ja) | 2008-01-24 |
EP1766354A2 (de) | 2007-03-28 |
WO2005121728A2 (de) | 2005-12-22 |
EP1766354B1 (de) | 2017-11-01 |
CN1985158B (zh) | 2012-07-18 |
DE102004028032A1 (de) | 2005-12-29 |
CN1985158A (zh) | 2007-06-20 |
US8215831B2 (en) | 2012-07-10 |
WO2005121728A3 (de) | 2006-04-27 |
US20070297485A1 (en) | 2007-12-27 |
DE102004028032B4 (de) | 2008-04-17 |
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