JP4823478B2 - 発光装置の作製方法 - Google Patents

発光装置の作製方法 Download PDF

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Publication number
JP4823478B2
JP4823478B2 JP2003328942A JP2003328942A JP4823478B2 JP 4823478 B2 JP4823478 B2 JP 4823478B2 JP 2003328942 A JP2003328942 A JP 2003328942A JP 2003328942 A JP2003328942 A JP 2003328942A JP 4823478 B2 JP4823478 B2 JP 4823478B2
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JP
Japan
Prior art keywords
film
light
electrode
insulating film
conductive film
Prior art date
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Expired - Fee Related
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JP2003328942A
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English (en)
Japanese (ja)
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JP2005093396A (ja
JP2005093396A5 (https=
Inventor
舜平 山崎
真之 坂倉
雅晴 永井
豊 松田
恵子 斎藤
寿雄 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003328942A priority Critical patent/JP4823478B2/ja
Priority to US10/941,837 priority patent/US7306978B2/en
Priority to CNB2004100787653A priority patent/CN100405577C/zh
Publication of JP2005093396A publication Critical patent/JP2005093396A/ja
Publication of JP2005093396A5 publication Critical patent/JP2005093396A5/ja
Priority to US11/984,552 priority patent/US7737449B2/en
Application granted granted Critical
Publication of JP4823478B2 publication Critical patent/JP4823478B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2003328942A 2003-09-19 2003-09-19 発光装置の作製方法 Expired - Fee Related JP4823478B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003328942A JP4823478B2 (ja) 2003-09-19 2003-09-19 発光装置の作製方法
US10/941,837 US7306978B2 (en) 2003-09-19 2004-09-16 Light emitting device and method of manufacturing thereof
CNB2004100787653A CN100405577C (zh) 2003-09-19 2004-09-18 发光器件及其制造方法
US11/984,552 US7737449B2 (en) 2003-09-19 2007-11-19 Light emitting device and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003328942A JP4823478B2 (ja) 2003-09-19 2003-09-19 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005093396A JP2005093396A (ja) 2005-04-07
JP2005093396A5 JP2005093396A5 (https=) 2006-10-26
JP4823478B2 true JP4823478B2 (ja) 2011-11-24

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Family Applications (1)

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JP2003328942A Expired - Fee Related JP4823478B2 (ja) 2003-09-19 2003-09-19 発光装置の作製方法

Country Status (3)

Country Link
US (2) US7306978B2 (https=)
JP (1) JP4823478B2 (https=)
CN (1) CN100405577C (https=)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6965124B2 (en) * 2000-12-12 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method of fabricating the same
US7520790B2 (en) 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
EP1820372B1 (en) 2004-09-24 2016-04-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8633473B2 (en) 2004-12-28 2014-01-21 Semiconductor Energy Laboratory Co., Ltd. High contrast light emitting device and method for manufacturing the same
JP4939809B2 (ja) 2005-01-21 2012-05-30 株式会社半導体エネルギー研究所 発光装置
JP4581759B2 (ja) * 2005-03-14 2010-11-17 セイコーエプソン株式会社 発光装置、画像形成装置および電子機器
US8729795B2 (en) 2005-06-30 2014-05-20 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
US20070261951A1 (en) * 2006-04-06 2007-11-15 Yan Ye Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
TWI358964B (en) * 2006-04-12 2012-02-21 Au Optronics Corp Electroluminescence display element and method for
US7737455B2 (en) * 2006-05-19 2010-06-15 Bridgelux, Inc. Electrode structures for LEDs with increased active area
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
CN100426490C (zh) * 2006-07-25 2008-10-15 友达光电股份有限公司 有源元件基板的形成方法
US7736936B2 (en) * 2006-08-29 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Method of forming display device that includes removing mask to form opening in insulating film
US20080254613A1 (en) * 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US7927713B2 (en) * 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
KR101603314B1 (ko) * 2008-09-11 2016-03-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US20100133094A1 (en) * 2008-12-02 2010-06-03 Applied Materials, Inc. Transparent conductive film with high transmittance formed by a reactive sputter deposition
US20100163406A1 (en) * 2008-12-30 2010-07-01 Applied Materials, Inc. Substrate support in a reactive sputter chamber
KR101015850B1 (ko) * 2009-02-09 2011-02-24 삼성모바일디스플레이주식회사 유기 발광 표시 장치 제조 방법
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
DE112010003296T5 (de) * 2009-08-17 2012-12-27 First Solar, Inc. Barriereschicht
CN102640294B (zh) * 2009-09-24 2014-12-17 应用材料公司 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
JP5479391B2 (ja) * 2011-03-08 2014-04-23 株式会社東芝 半導体発光素子及びその製造方法
JP6220497B2 (ja) * 2011-06-09 2017-10-25 株式会社半導体エネルギー研究所 発光装置
TWI595565B (zh) * 2011-06-17 2017-08-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR101423907B1 (ko) * 2011-11-22 2014-07-29 엘지디스플레이 주식회사 산화물 박막 트랜지스터 및 그 제조방법
KR101434366B1 (ko) 2012-08-24 2014-08-26 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치
CN102856392B (zh) * 2012-10-09 2015-12-02 深圳市华星光电技术有限公司 薄膜晶体管主动装置及其制作方法
KR102010789B1 (ko) * 2012-12-27 2019-10-21 엘지디스플레이 주식회사 투명 유기 발광 표시 장치 및 투명 유기 발광 표시 장치 제조 방법
US9692008B2 (en) 2013-06-11 2017-06-27 Sharp Kabushiki Kaisha Organic electroluminescent display device
KR101907593B1 (ko) 2013-08-13 2018-10-15 삼성디스플레이 주식회사 가요성 표시 장치
TWI765679B (zh) 2014-05-30 2022-05-21 日商半導體能源研究所股份有限公司 觸控面板
CN104091832B (zh) * 2014-06-27 2018-07-17 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
KR20160014833A (ko) * 2014-07-29 2016-02-12 삼성디스플레이 주식회사 금속 배선의 제조 방법 및 박막트랜지스터 기판 제조 방법
US10680017B2 (en) * 2014-11-07 2020-06-09 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element including EL layer, electrode which has high reflectance and a high work function, display device, electronic device, and lighting device
CN108319057A (zh) * 2018-03-29 2018-07-24 武汉华星光电技术有限公司 基板边缘处理方法、掩膜版
JP6648349B1 (ja) * 2018-04-20 2020-02-14 堺ディスプレイプロダクト株式会社 有機ｅｌデバイスおよびその製造方法
KR20250069709A (ko) 2018-05-18 2025-05-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
KR102104590B1 (ko) * 2019-08-23 2020-04-27 삼성디스플레이 주식회사 가요성 표시 장치
CN111293147B (zh) * 2020-02-19 2024-02-09 合肥鑫晟光电科技有限公司 一种显示用基板及其制备方法、显示装置
KR102185251B1 (ko) * 2020-04-20 2020-12-02 삼성디스플레이 주식회사 가요성 표시 장치
KR102303603B1 (ko) * 2020-11-25 2021-09-17 삼성디스플레이 주식회사 가요성 표시 장치
KR102225595B1 (ko) * 2020-11-25 2021-03-09 삼성디스플레이 주식회사 가요성 표시 장치
CN117561559A (zh) * 2021-07-26 2024-02-13 夏普显示科技株式会社 显示装置的制造方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142688A (ja) * 1984-12-14 1986-06-30 株式会社日立製作所 薄膜ｅｌ素子の製造方法
JPH0846045A (ja) * 1994-05-27 1996-02-16 Sanyo Electric Co Ltd 半導体装置
US5707745A (en) * 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
JPH09236826A (ja) 1995-09-28 1997-09-09 Sharp Corp 液晶表示素子およびその製造方法
TW364275B (en) 1996-03-12 1999-07-11 Idemitsu Kosan Co Organic electroluminescent element and organic electroluminescent display device
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
US6599788B1 (en) * 1999-08-18 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4562835B2 (ja) * 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001176673A (ja) * 1999-12-14 2001-06-29 Tdk Corp 有機ｅｌ素子
US6821827B2 (en) * 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6872607B2 (en) * 2000-03-21 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW501282B (en) * 2000-06-07 2002-09-01 Semiconductor Energy Lab Method of manufacturing semiconductor device
TW515223B (en) 2000-07-24 2002-12-21 Tdk Corp Light emitting device
TW522577B (en) * 2000-11-10 2003-03-01 Semiconductor Energy Lab Light emitting device
JP4872155B2 (ja) * 2001-01-17 2012-02-08 凸版印刷株式会社 Ｉｔｏパターン付き基板の製造方法
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP4693253B2 (ja) 2001-01-30 2011-06-01 株式会社半導体エネルギー研究所 発光装置、電子機器
JP2002352950A (ja) 2001-02-07 2002-12-06 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
SG138468A1 (en) * 2001-02-28 2008-01-28 Semiconductor Energy Lab A method of manufacturing a semiconductor device
SG142160A1 (en) * 2001-03-19 2008-05-28 Semiconductor Energy Lab Method of manufacturing a semiconductor device
JP3643067B2 (ja) * 2001-10-11 2005-04-27 株式会社半導体エネルギー研究所 半導体表示装置の設計方法
US6876047B2 (en) * 2001-11-09 2005-04-05 Turnstone Systems, Inc. MEMS device having a trilayered beam and related methods
US6822264B2 (en) 2001-11-16 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TWI273539B (en) * 2001-11-29 2007-02-11 Semiconductor Energy Lab Display device and display system using the same
JP3798370B2 (ja) * 2001-11-29 2006-07-19 株式会社半導体エネルギー研究所 表示装置及びこれを用いた表示システム
US7118943B2 (en) * 2002-04-22 2006-10-10 Seiko Epson Corporation Production method of a thin film device, production method of a transistor, electro-optical apparatus and electronic equipment
US7897979B2 (en) * 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
JP4741177B2 (ja) 2003-08-29 2011-08-03 株式会社半導体エネルギー研究所 表示装置の作製方法
US7816863B2 (en) 2003-09-12 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for manufacturing the same
US7520790B2 (en) 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device

Also Published As

Publication number Publication date
US7306978B2 (en) 2007-12-11
US7737449B2 (en) 2010-06-15
CN1599056A (zh) 2005-03-23
JP2005093396A (ja) 2005-04-07
CN100405577C (zh) 2008-07-23
US20050062057A1 (en) 2005-03-24
US20080088245A1 (en) 2008-04-17

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