JP4819304B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
- Publication number
- JP4819304B2 JP4819304B2 JP2003207767A JP2003207767A JP4819304B2 JP 4819304 B2 JP4819304 B2 JP 4819304B2 JP 2003207767 A JP2003207767 A JP 2003207767A JP 2003207767 A JP2003207767 A JP 2003207767A JP 4819304 B2 JP4819304 B2 JP 4819304B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- electrode
- layer
- semiconductor package
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 100
- 239000000758 substrate Substances 0.000 claims description 79
- 229920005989 resin Polymers 0.000 claims description 39
- 239000011347 resin Substances 0.000 claims description 39
- 239000004020 conductor Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 14
- 230000009477 glass transition Effects 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000001721 transfer moulding Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 207
- 238000007747 plating Methods 0.000 description 39
- 238000000034 method Methods 0.000 description 38
- 239000010949 copper Substances 0.000 description 35
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 13
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 229910001220 stainless steel Inorganic materials 0.000 description 7
- 239000010935 stainless steel Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- -1 acrylate compound Chemical class 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
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- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002577 polybenzoxazole Polymers 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 2
- 229920000544 Gore-Tex Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 238000009864 tensile test Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000001837 2-hydroxy-3-methylcyclopent-2-en-1-one Substances 0.000 description 1
- BKQXUNGELBDWLS-UHFFFAOYSA-N 9,9-diphenylfluorene Chemical group C1=CC=CC=C1C1(C=2C=CC=CC=2)C2=CC=CC=C2C2=CC=CC=C21 BKQXUNGELBDWLS-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003207767A JP4819304B2 (ja) | 2000-10-18 | 2003-08-18 | 半導体パッケージ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000318449 | 2000-10-18 | ||
JP2000318449 | 2000-10-18 | ||
JP2003207767A JP4819304B2 (ja) | 2000-10-18 | 2003-08-18 | 半導体パッケージ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001265802A Division JP3546961B2 (ja) | 2000-10-18 | 2001-09-03 | 半導体装置搭載用配線基板およびその製造方法、並びに半導体パッケージ |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005010033A Division JP4345679B2 (ja) | 2000-10-18 | 2005-01-18 | 半導体装置搭載用配線基板の製造方法 |
JP2007257730A Division JP2008047936A (ja) | 2000-10-18 | 2007-10-01 | 半導体パッケージおよびその製造方法 |
JP2008295444A Division JP5029581B2 (ja) | 2000-10-18 | 2008-11-19 | 半導体パッケージの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004064082A JP2004064082A (ja) | 2004-02-26 |
JP2004064082A5 JP2004064082A5 (enrdf_load_stackoverflow) | 2005-08-25 |
JP4819304B2 true JP4819304B2 (ja) | 2011-11-24 |
Family
ID=31948897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003207767A Expired - Lifetime JP4819304B2 (ja) | 2000-10-18 | 2003-08-18 | 半導体パッケージ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4819304B2 (enrdf_load_stackoverflow) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4434845B2 (ja) | 2004-06-08 | 2010-03-17 | 三洋電機株式会社 | 半導体モジュールとその製造方法および半導体装置 |
JP3961537B2 (ja) * | 2004-07-07 | 2007-08-22 | 日本電気株式会社 | 半導体搭載用配線基板の製造方法、及び半導体パッケージの製造方法 |
JP2006186321A (ja) | 2004-12-01 | 2006-07-13 | Shinko Electric Ind Co Ltd | 回路基板の製造方法及び電子部品実装構造体の製造方法 |
JP5653144B2 (ja) * | 2004-12-16 | 2015-01-14 | 新光電気工業株式会社 | 半導体パッケージの製造方法 |
JP4619223B2 (ja) | 2004-12-16 | 2011-01-26 | 新光電気工業株式会社 | 半導体パッケージ及びその製造方法 |
JP2008084959A (ja) | 2006-09-26 | 2008-04-10 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
KR101360600B1 (ko) * | 2007-02-05 | 2014-02-10 | 엘지이노텍 주식회사 | 수동소자의 솔더링 실장을 위한 구조를 가지는인쇄회로기판과 인쇄회로기판을 이용한 피씨비 카드 및그의 제조방법 |
JP4800253B2 (ja) | 2007-04-04 | 2011-10-26 | 新光電気工業株式会社 | 配線基板の製造方法 |
JP5101451B2 (ja) | 2008-10-03 | 2012-12-19 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
JP7335036B2 (ja) * | 2019-03-29 | 2023-08-29 | ラピスセミコンダクタ株式会社 | 半導体パッケージの製造方法 |
JP7427966B2 (ja) * | 2020-01-16 | 2024-02-06 | Tdk株式会社 | 電子部品 |
CN112831776A (zh) * | 2021-02-08 | 2021-05-25 | 福州大学 | 一种3-3型陶瓷-聚合物介电复合材料金属化的方法 |
-
2003
- 2003-08-18 JP JP2003207767A patent/JP4819304B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2004064082A (ja) | 2004-02-26 |
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