JP4815743B2 - 圧電素子の製造方法 - Google Patents
圧電素子の製造方法 Download PDFInfo
- Publication number
- JP4815743B2 JP4815743B2 JP2004006563A JP2004006563A JP4815743B2 JP 4815743 B2 JP4815743 B2 JP 4815743B2 JP 2004006563 A JP2004006563 A JP 2004006563A JP 2004006563 A JP2004006563 A JP 2004006563A JP 4815743 B2 JP4815743 B2 JP 4815743B2
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric element
- thin film
- piezoelectric
- lower electrode
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title description 32
- 239000010409 thin film Substances 0.000 claims description 53
- 230000010287 polarization Effects 0.000 claims description 52
- 239000000758 substrate Substances 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 description 24
- 230000005684 electric field Effects 0.000 description 14
- 239000010936 titanium Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Description
2 下部電極
3 圧電薄膜
4 上部電極
5 第一のレジスト
6 第二のレジスト
7 導電体
8 第三のレジスト
Claims (1)
- 基板の上に下部電極と、この下部電極の上に圧電薄膜と、この圧電薄膜の上に上部電極とを順次積層して形成する成膜工程と、前記下部電極と上部電極との間に電圧を印加して圧電薄膜の分極方向を揃える分極工程と、前記基板の上に付着した有機物を除去する洗浄工程と、ドライエッチングにより加工して少なくとも1つの個片にする加工工程とを含み、上部電極の帯電を防止するためにこの個片にする加工工程まで前記下部電極と前記上部電極とを短絡して前記圧電薄膜の所定分極状態を保持するようにした圧電素子の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004006563A JP4815743B2 (ja) | 2004-01-14 | 2004-01-14 | 圧電素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004006563A JP4815743B2 (ja) | 2004-01-14 | 2004-01-14 | 圧電素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005203477A JP2005203477A (ja) | 2005-07-28 |
JP4815743B2 true JP4815743B2 (ja) | 2011-11-16 |
Family
ID=34820487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004006563A Expired - Lifetime JP4815743B2 (ja) | 2004-01-14 | 2004-01-14 | 圧電素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4815743B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4367654B2 (ja) | 2006-08-30 | 2009-11-18 | セイコーエプソン株式会社 | 圧電素子及び液体噴射ヘッド |
TWI728569B (zh) * | 2019-11-25 | 2021-05-21 | 馗鼎奈米科技股份有限公司 | 放電極化設備 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5790986A (en) * | 1980-11-26 | 1982-06-05 | Matsushita Electric Ind Co Ltd | Fabrication of piezo electric ceramic element |
JP2665106B2 (ja) * | 1992-03-17 | 1997-10-22 | 日本碍子株式会社 | 圧電/電歪膜型素子 |
JPH0864509A (ja) * | 1994-08-18 | 1996-03-08 | Canon Inc | レジスト分解方法及び分解装置 |
JPH11322420A (ja) * | 1998-05-19 | 1999-11-24 | Matsushita Electric Ind Co Ltd | 圧電磁器組成物およびその製造方法 |
JP2000059165A (ja) * | 1998-08-06 | 2000-02-25 | Toshiba Corp | 弾性表面波装置およびその製造方法 |
JP2001160638A (ja) * | 1999-12-01 | 2001-06-12 | Wac Data Service Kk | 帯状圧電板 |
JP3426185B2 (ja) * | 2000-03-28 | 2003-07-14 | 松下電器産業株式会社 | 圧電スピーカ |
JP4259019B2 (ja) * | 2002-01-25 | 2009-04-30 | パナソニック株式会社 | 電子部品の製造方法 |
JP2003298137A (ja) * | 2002-04-05 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 圧電機能部品の製造方法及びその製造装置 |
-
2004
- 2004-01-14 JP JP2004006563A patent/JP4815743B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2005203477A (ja) | 2005-07-28 |
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