JP4815344B2 - Ｍｒａｍデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 - Google Patents

Ｍｒａｍデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 Download PDF

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JP4815344B2
JP4815344B2 JP2006513086A JP2006513086A JP4815344B2 JP 4815344 B2 JP4815344 B2 JP 4815344B2 JP 2006513086 A JP2006513086 A JP 2006513086A JP 2006513086 A JP2006513086 A JP 2006513086A JP 4815344 B2 JP4815344 B2 JP 4815344B2
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layer
masking
dielectric
magnetic
cover
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JP2006524436A (ja
JP2006524436A5 (enExample
Inventor
ダブリュ． グリンコウィッチ、グレゴリー
アール． ブッチャー、ブライアン
エイ． ダーラム、マーク
カイラー、ケリー
エイ． スナイダー、チャールズ
エイチ． スミス、ケネス
ジェイ． トレイシー、クラレンス
ウィリアムズ、リチャード
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Everspin Technologies Inc
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Everspin Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006513086A 2003-04-22 2004-04-16 Ｍｒａｍデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法 Expired - Lifetime JP4815344B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/421,096 2003-04-22
US10/421,096 US6881351B2 (en) 2003-04-22 2003-04-22 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
PCT/US2004/011872 WO2004095515A2 (en) 2003-04-22 2004-04-16 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices

Publications (3)

Publication Number Publication Date
JP2006524436A JP2006524436A (ja) 2006-10-26
JP2006524436A5 JP2006524436A5 (enExample) 2007-06-07
JP4815344B2 true JP4815344B2 (ja) 2011-11-16

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JP2006513086A Expired - Lifetime JP4815344B2 (ja) 2003-04-22 2004-04-16 Ｍｒａｍデバイスの磁気エレクトロニクス素子を覆う導電層への接触方法

Country Status (6)

Country Link
US (2) US6881351B2 (enExample)
JP (1) JP4815344B2 (enExample)
KR (1) KR101036703B1 (enExample)
CN (1) CN1777955B (enExample)
TW (1) TWI340771B (enExample)
WO (1) WO2004095515A2 (enExample)

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US7611911B2 (en) * 2003-10-08 2009-11-03 International Business Machines Corporation Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion
US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
US7183893B2 (en) * 2004-02-04 2007-02-27 Seagate Technology Llc TMR sensor with oxidized alloy barrier layer and method for forming the same
US7074713B2 (en) * 2004-09-30 2006-07-11 Freescale Semiconductor, Inc. Plasma enhanced nitride layer
KR100698287B1 (ko) * 2005-01-31 2007-03-22 삼성전자주식회사 박막벌크음향공진기 및 그 제조 방법
US7172908B2 (en) * 2005-02-15 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic memory cells and manufacturing methods
US7241632B2 (en) * 2005-04-14 2007-07-10 Headway Technologies, Inc. MTJ read head with sidewall spacers
US7399646B2 (en) * 2005-08-23 2008-07-15 International Business Machines Corporation Magnetic devices and techniques for formation thereof
US20070054450A1 (en) * 2005-09-07 2007-03-08 Magic Technologies, Inc. Structure and fabrication of an MRAM cell
US20070086122A1 (en) * 2005-10-19 2007-04-19 Hitachi Global Storage Technologies CPP magnetoresistive sensor having a reduced, shield defined track width
US7880249B2 (en) * 2005-11-30 2011-02-01 Magic Technologies, Inc. Spacer structure in MRAM cell and method of its fabrication
US7345911B2 (en) * 2006-02-14 2008-03-18 Magic Technologies, Inc. Multi-state thermally assisted storage
KR100723420B1 (ko) * 2006-02-20 2007-05-30 삼성전자주식회사 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자
CN100511431C (zh) * 2006-02-22 2009-07-08 Tdk股份有限公司 磁记录介质的制造方法
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
US9368716B2 (en) * 2009-02-02 2016-06-14 Qualcomm Incorporated Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ
KR20100109221A (ko) * 2009-03-31 2010-10-08 삼성전자주식회사 비휘발성 메모리 소자의 형성방법
JP5878116B2 (ja) * 2009-05-18 2016-03-08 アイメックＩｍｅｃ 磁性層のパターニングと接続
EP2299593A1 (en) * 2009-09-18 2011-03-23 Nxp B.V. Laterally coupled bulk acoustic wave device
JP2012156167A (ja) * 2011-01-21 2012-08-16 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US9793467B2 (en) * 2011-12-20 2017-10-17 Intel Corporation Method for reducing size and center positioning of magnetic memory element contacts
CN104659201B (zh) * 2013-11-22 2018-07-20 中芯国际集成电路制造(上海)有限公司 一种磁阻内存单元的制造方法
KR102369523B1 (ko) 2015-09-08 2022-03-03 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
US9929087B2 (en) * 2015-11-16 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd Enhancing integrated circuit density with active atomic reservoir
CN105655481A (zh) * 2015-12-24 2016-06-08 上海磁宇信息科技有限公司 超密型交叉矩阵列式磁性随机存储器制造工艺
CN109216541B (zh) * 2017-06-30 2022-05-17 中电海康集团有限公司 Mram与其的制作方法
US10720487B2 (en) * 2018-06-28 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with magnetic element

Citations (4)

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JP2000353791A (ja) * 1999-05-17 2000-12-19 Motorola Inc 磁気ランダム・アクセス・メモリおよびその製作方法
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
WO2003094182A1 (en) * 2002-04-30 2003-11-13 Micron Technology, Inc. Method of forming mram devices

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JPS5999370A (ja) * 1982-11-30 1984-06-08 Copal Co Ltd 磁気抵抗素子を具える磁気検出器の製造方法
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines
US6734079B2 (en) * 2002-06-13 2004-05-11 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
US6806096B1 (en) * 2003-06-18 2004-10-19 Infineon Technologies Ag Integration scheme for avoiding plasma damage in MRAM technology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353791A (ja) * 1999-05-17 2000-12-19 Motorola Inc 磁気ランダム・アクセス・メモリおよびその製作方法
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
WO2003094182A1 (en) * 2002-04-30 2003-11-13 Micron Technology, Inc. Method of forming mram devices

Also Published As

Publication number Publication date
CN1777955A (zh) 2006-05-24
WO2004095515A8 (en) 2005-11-17
TW200508417A (en) 2005-03-01
KR101036703B1 (ko) 2011-05-24
WO2004095515B1 (en) 2005-03-17
KR20060009862A (ko) 2006-02-01
US20040211749A1 (en) 2004-10-28
TWI340771B (en) 2011-04-21
US6881351B2 (en) 2005-04-19
US20050130374A1 (en) 2005-06-16
WO2004095515A2 (en) 2004-11-04
CN1777955B (zh) 2011-06-29
JP2006524436A (ja) 2006-10-26
WO2004095515A3 (en) 2005-01-27
US7476329B2 (en) 2009-01-13

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