TWI340771B - Method for contacting conducting layers overlying magnetoelectronic elements of mram devices - Google Patents
Method for contacting conducting layers overlying magnetoelectronic elements of mram devicesInfo
- Publication number
- TWI340771B TWI340771B TW093111295A TW93111295A TWI340771B TW I340771 B TWI340771 B TW I340771B TW 093111295 A TW093111295 A TW 093111295A TW 93111295 A TW93111295 A TW 93111295A TW I340771 B TWI340771 B TW I340771B
- Authority
- TW
- Taiwan
- Prior art keywords
- conducting layers
- mram devices
- layers overlying
- contacting conducting
- magnetoelectronic elements
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/421,096 US6881351B2 (en) | 2003-04-22 | 2003-04-22 | Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200508417A TW200508417A (en) | 2005-03-01 |
TWI340771B true TWI340771B (en) | 2011-04-21 |
Family
ID=33298612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093111295A TWI340771B (en) | 2003-04-22 | 2004-04-22 | Method for contacting conducting layers overlying magnetoelectronic elements of mram devices |
Country Status (6)
Country | Link |
---|---|
US (2) | US6881351B2 (zh) |
JP (1) | JP4815344B2 (zh) |
KR (1) | KR101036703B1 (zh) |
CN (1) | CN1777955B (zh) |
TW (1) | TWI340771B (zh) |
WO (1) | WO2004095515A2 (zh) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050014342A1 (en) * | 2003-07-18 | 2005-01-20 | International Business Machines Corporation | Small, scalable resistive element and method of manufacturing |
US7611911B2 (en) * | 2003-10-08 | 2009-11-03 | International Business Machines Corporation | Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion |
US6969895B2 (en) * | 2003-12-10 | 2005-11-29 | Headway Technologies, Inc. | MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture |
US7183893B2 (en) * | 2004-02-04 | 2007-02-27 | Seagate Technology Llc | TMR sensor with oxidized alloy barrier layer and method for forming the same |
US7074713B2 (en) * | 2004-09-30 | 2006-07-11 | Freescale Semiconductor, Inc. | Plasma enhanced nitride layer |
KR100698287B1 (ko) * | 2005-01-31 | 2007-03-22 | 삼성전자주식회사 | 박막벌크음향공진기 및 그 제조 방법 |
US7172908B2 (en) * | 2005-02-15 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic memory cells and manufacturing methods |
US7241632B2 (en) * | 2005-04-14 | 2007-07-10 | Headway Technologies, Inc. | MTJ read head with sidewall spacers |
US7399646B2 (en) * | 2005-08-23 | 2008-07-15 | International Business Machines Corporation | Magnetic devices and techniques for formation thereof |
US20070054450A1 (en) | 2005-09-07 | 2007-03-08 | Magic Technologies, Inc. | Structure and fabrication of an MRAM cell |
US20070086122A1 (en) * | 2005-10-19 | 2007-04-19 | Hitachi Global Storage Technologies | CPP magnetoresistive sensor having a reduced, shield defined track width |
US7880249B2 (en) * | 2005-11-30 | 2011-02-01 | Magic Technologies, Inc. | Spacer structure in MRAM cell and method of its fabrication |
US7345911B2 (en) * | 2006-02-14 | 2008-03-18 | Magic Technologies, Inc. | Multi-state thermally assisted storage |
KR100723420B1 (ko) * | 2006-02-20 | 2007-05-30 | 삼성전자주식회사 | 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자 |
CN100511431C (zh) * | 2006-02-22 | 2009-07-08 | Tdk股份有限公司 | 磁记录介质的制造方法 |
US8542524B2 (en) * | 2007-02-12 | 2013-09-24 | Avalanche Technology, Inc. | Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement |
US7833806B2 (en) * | 2009-01-30 | 2010-11-16 | Everspin Technologies, Inc. | Structure and method for fabricating cladded conductive lines in magnetic memories |
US9368716B2 (en) * | 2009-02-02 | 2016-06-14 | Qualcomm Incorporated | Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ |
KR20100109221A (ko) * | 2009-03-31 | 2010-10-08 | 삼성전자주식회사 | 비휘발성 메모리 소자의 형성방법 |
EP2433316B1 (en) * | 2009-05-18 | 2013-10-16 | Imec | Patterning and contacting of magnetic layers |
EP2299593A1 (en) * | 2009-09-18 | 2011-03-23 | Nxp B.V. | Laterally coupled bulk acoustic wave device |
JP2012156167A (ja) * | 2011-01-21 | 2012-08-16 | Toshiba Corp | 磁気ランダムアクセスメモリ及びその製造方法 |
US9793467B2 (en) * | 2011-12-20 | 2017-10-17 | Intel Corporation | Method for reducing size and center positioning of magnetic memory element contacts |
CN104659201B (zh) * | 2013-11-22 | 2018-07-20 | 中芯国际集成电路制造(上海)有限公司 | 一种磁阻内存单元的制造方法 |
KR102369523B1 (ko) | 2015-09-08 | 2022-03-03 | 삼성전자주식회사 | 자기 저항 메모리 장치 및 그 제조 방법 |
US9929087B2 (en) * | 2015-11-16 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Enhancing integrated circuit density with active atomic reservoir |
CN105655481A (zh) * | 2015-12-24 | 2016-06-08 | 上海磁宇信息科技有限公司 | 超密型交叉矩阵列式磁性随机存储器制造工艺 |
CN109216541B (zh) * | 2017-06-30 | 2022-05-17 | 中电海康集团有限公司 | Mram与其的制作方法 |
US10720487B2 (en) * | 2018-06-28 | 2020-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with magnetic element |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5999370A (ja) * | 1982-11-30 | 1984-06-08 | Copal Co Ltd | 磁気抵抗素子を具える磁気検出器の製造方法 |
US6165803A (en) | 1999-05-17 | 2000-12-26 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
US6440753B1 (en) * | 2001-01-24 | 2002-08-27 | Infineon Technologies North America Corp. | Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines |
JP2003069112A (ja) * | 2001-08-28 | 2003-03-07 | Nec Corp | 強磁性トンネル接合素子の製造方法 |
JP2003258129A (ja) * | 2002-03-01 | 2003-09-12 | Seiko Epson Corp | 不揮発性記憶装置の製造方法 |
US6783995B2 (en) * | 2002-04-30 | 2004-08-31 | Micron Technology, Inc. | Protective layers for MRAM devices |
US6734079B2 (en) * | 2002-06-13 | 2004-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd | Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein |
US6806096B1 (en) * | 2003-06-18 | 2004-10-19 | Infineon Technologies Ag | Integration scheme for avoiding plasma damage in MRAM technology |
-
2003
- 2003-04-22 US US10/421,096 patent/US6881351B2/en not_active Expired - Lifetime
-
2004
- 2004-04-16 CN CN2004800108487A patent/CN1777955B/zh not_active Expired - Lifetime
- 2004-04-16 WO PCT/US2004/011872 patent/WO2004095515A2/en active Application Filing
- 2004-04-16 JP JP2006513086A patent/JP4815344B2/ja not_active Expired - Lifetime
- 2004-04-16 KR KR1020057020063A patent/KR101036703B1/ko active IP Right Grant
- 2004-04-22 TW TW093111295A patent/TWI340771B/zh active
-
2005
- 2005-02-02 US US11/050,191 patent/US7476329B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2004095515A2 (en) | 2004-11-04 |
KR101036703B1 (ko) | 2011-05-24 |
US6881351B2 (en) | 2005-04-19 |
CN1777955A (zh) | 2006-05-24 |
US20040211749A1 (en) | 2004-10-28 |
JP2006524436A (ja) | 2006-10-26 |
TW200508417A (en) | 2005-03-01 |
WO2004095515A8 (en) | 2005-11-17 |
CN1777955B (zh) | 2011-06-29 |
US7476329B2 (en) | 2009-01-13 |
WO2004095515B1 (en) | 2005-03-17 |
KR20060009862A (ko) | 2006-02-01 |
US20050130374A1 (en) | 2005-06-16 |
WO2004095515A3 (en) | 2005-01-27 |
JP4815344B2 (ja) | 2011-11-16 |
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