CN1777955B - 与mram器件中磁电子元件上的导电层形成接触的方法 - Google Patents

与mram器件中磁电子元件上的导电层形成接触的方法 Download PDF

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Publication number
CN1777955B
CN1777955B CN2004800108487A CN200480010848A CN1777955B CN 1777955 B CN1777955 B CN 1777955B CN 2004800108487 A CN2004800108487 A CN 2004800108487A CN 200480010848 A CN200480010848 A CN 200480010848A CN 1777955 B CN1777955 B CN 1777955B
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China
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layer
dielectric layer
depositing
dielectric
etching
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Chinese (zh)
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CN1777955A (zh
Inventor
格雷格里·W·格里恩柯维奇
布莱恩·R·布彻
马克·A·杜尔拉姆
凯利·凯勒
查尔斯·A·斯奈德尔
肯尼斯·H·史密斯
克拉伦斯·J·特拉希
理查德·威廉斯
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Everspin Technologies Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2004800108487A 2003-04-22 2004-04-16 与mram器件中磁电子元件上的导电层形成接触的方法 Expired - Lifetime CN1777955B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/421,096 2003-04-22
US10/421,096 US6881351B2 (en) 2003-04-22 2003-04-22 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
PCT/US2004/011872 WO2004095515A2 (en) 2003-04-22 2004-04-16 Methods for contracting conducting layers overlying magnetoelectronic elements of mram devices

Publications (2)

Publication Number Publication Date
CN1777955A CN1777955A (zh) 2006-05-24
CN1777955B true CN1777955B (zh) 2011-06-29

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CN2004800108487A Expired - Lifetime CN1777955B (zh) 2003-04-22 2004-04-16 与mram器件中磁电子元件上的导电层形成接触的方法

Country Status (6)

Country Link
US (2) US6881351B2 (enExample)
JP (1) JP4815344B2 (enExample)
KR (1) KR101036703B1 (enExample)
CN (1) CN1777955B (enExample)
TW (1) TWI340771B (enExample)
WO (1) WO2004095515A2 (enExample)

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US7611911B2 (en) * 2003-10-08 2009-11-03 International Business Machines Corporation Method and system for patterning of magnetic thin films using gaseous transformation to transform a magnetic portion to a non-magnetic portion
US6969895B2 (en) * 2003-12-10 2005-11-29 Headway Technologies, Inc. MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture
US7183893B2 (en) * 2004-02-04 2007-02-27 Seagate Technology Llc TMR sensor with oxidized alloy barrier layer and method for forming the same
US7074713B2 (en) * 2004-09-30 2006-07-11 Freescale Semiconductor, Inc. Plasma enhanced nitride layer
KR100698287B1 (ko) * 2005-01-31 2007-03-22 삼성전자주식회사 박막벌크음향공진기 및 그 제조 방법
US7172908B2 (en) * 2005-02-15 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic memory cells and manufacturing methods
US7241632B2 (en) * 2005-04-14 2007-07-10 Headway Technologies, Inc. MTJ read head with sidewall spacers
US7399646B2 (en) * 2005-08-23 2008-07-15 International Business Machines Corporation Magnetic devices and techniques for formation thereof
US20070054450A1 (en) * 2005-09-07 2007-03-08 Magic Technologies, Inc. Structure and fabrication of an MRAM cell
US20070086122A1 (en) * 2005-10-19 2007-04-19 Hitachi Global Storage Technologies CPP magnetoresistive sensor having a reduced, shield defined track width
US7880249B2 (en) * 2005-11-30 2011-02-01 Magic Technologies, Inc. Spacer structure in MRAM cell and method of its fabrication
US7345911B2 (en) * 2006-02-14 2008-03-18 Magic Technologies, Inc. Multi-state thermally assisted storage
KR100723420B1 (ko) * 2006-02-20 2007-05-30 삼성전자주식회사 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자
CN100511431C (zh) * 2006-02-22 2009-07-08 Tdk股份有限公司 磁记录介质的制造方法
US8542524B2 (en) * 2007-02-12 2013-09-24 Avalanche Technology, Inc. Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement
US7833806B2 (en) * 2009-01-30 2010-11-16 Everspin Technologies, Inc. Structure and method for fabricating cladded conductive lines in magnetic memories
US9368716B2 (en) * 2009-02-02 2016-06-14 Qualcomm Incorporated Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ
KR20100109221A (ko) * 2009-03-31 2010-10-08 삼성전자주식회사 비휘발성 메모리 소자의 형성방법
JP5878116B2 (ja) * 2009-05-18 2016-03-08 アイメックＩｍｅｃ 磁性層のパターニングと接続
EP2299593A1 (en) * 2009-09-18 2011-03-23 Nxp B.V. Laterally coupled bulk acoustic wave device
JP2012156167A (ja) * 2011-01-21 2012-08-16 Toshiba Corp 磁気ランダムアクセスメモリ及びその製造方法
US9793467B2 (en) * 2011-12-20 2017-10-17 Intel Corporation Method for reducing size and center positioning of magnetic memory element contacts
CN104659201B (zh) * 2013-11-22 2018-07-20 中芯国际集成电路制造(上海)有限公司 一种磁阻内存单元的制造方法
KR102369523B1 (ko) 2015-09-08 2022-03-03 삼성전자주식회사 자기 저항 메모리 장치 및 그 제조 방법
US9929087B2 (en) * 2015-11-16 2018-03-27 Taiwan Semiconductor Manufacturing Co., Ltd Enhancing integrated circuit density with active atomic reservoir
CN105655481A (zh) * 2015-12-24 2016-06-08 上海磁宇信息科技有限公司 超密型交叉矩阵列式磁性随机存储器制造工艺
CN109216541B (zh) * 2017-06-30 2022-05-17 中电海康集团有限公司 Mram与其的制作方法
US10720487B2 (en) * 2018-06-28 2020-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with magnetic element

Citations (3)

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Publication number Priority date Publication date Assignee Title
US4470873A (en) * 1982-11-30 1984-09-11 Copal Company Limited Method of manufacturing magnetic sensor comprising at least two magnetoresistive elements
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines

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JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
US6783995B2 (en) * 2002-04-30 2004-08-31 Micron Technology, Inc. Protective layers for MRAM devices
US6734079B2 (en) * 2002-06-13 2004-05-11 Taiwan Semiconductor Manufacturing Co., Ltd Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein
US6806096B1 (en) * 2003-06-18 2004-10-19 Infineon Technologies Ag Integration scheme for avoiding plasma damage in MRAM technology

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4470873A (en) * 1982-11-30 1984-09-11 Copal Company Limited Method of manufacturing magnetic sensor comprising at least two magnetoresistive elements
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines

Also Published As

Publication number Publication date
CN1777955A (zh) 2006-05-24
WO2004095515A8 (en) 2005-11-17
TW200508417A (en) 2005-03-01
KR101036703B1 (ko) 2011-05-24
WO2004095515B1 (en) 2005-03-17
KR20060009862A (ko) 2006-02-01
US20040211749A1 (en) 2004-10-28
TWI340771B (en) 2011-04-21
US6881351B2 (en) 2005-04-19
JP4815344B2 (ja) 2011-11-16
US20050130374A1 (en) 2005-06-16
WO2004095515A2 (en) 2004-11-04
JP2006524436A (ja) 2006-10-26
WO2004095515A3 (en) 2005-01-27
US7476329B2 (en) 2009-01-13

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