JP4814491B2 - 透明導電膜の形成方法及び透明電極 - Google Patents
透明導電膜の形成方法及び透明電極 Download PDFInfo
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- JP4814491B2 JP4814491B2 JP2004047342A JP2004047342A JP4814491B2 JP 4814491 B2 JP4814491 B2 JP 4814491B2 JP 2004047342 A JP2004047342 A JP 2004047342A JP 2004047342 A JP2004047342 A JP 2004047342A JP 4814491 B2 JP4814491 B2 JP 4814491B2
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- 239000002985 plastic film Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- RJSZFSOFYVMDIC-UHFFFAOYSA-N tert-butyl n,n-dimethylcarbamate Chemical compound CN(C)C(=O)OC(C)(C)C RJSZFSOFYVMDIC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- FLTJDUOFAQWHDF-UHFFFAOYSA-N trimethyl pentane Natural products CCCCC(C)(C)C FLTJDUOFAQWHDF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
(製造例1)
(比較例1)
実施例2〜4ではIn微粒子とITO微粒子とを、実施例5〜18ではIn−Sn合金微粒子(Sn:6wt%)とITO微粒子とを用いた。得られた膜において、Snを添加しないものはSnを添加したものに比べ高い抵抗値を示したが、透過率はほぼ同等であった。
Claims (6)
- インジウム、錫、アンチモン、アルミニウム及び亜鉛から選ばれた少なくとも1種の金属の微粒子、該金属から選ばれた2種以上の金属からなる合金の少なくとも1種の微粒子、又は該金属微粒子及び合金微粒子の混合物と、SnドープIn2O3、SbドープSnO2、ZnドープIn2O3及びAlドープZnOから選ばれた少なくとも1種の酸化物の微粒子とが有機溶媒中に混合、分散されてなる透明導電膜形成用分散液を基材に塗布後、最初に真空雰囲気、不活性ガス雰囲気及び還元性ガス雰囲気から選ばれた金属や合金を酸化しない雰囲気中で焼成を行い、次いで酸化性ガス雰囲気中で焼成を行うことを特徴とする透明導電膜の形成方法。
- 前記酸化性ガス雰囲気中での焼成後、更に真空雰囲気、不活性雰囲気及び還元性ガス雰囲気から選ばれた雰囲気中で焼成することを特徴とする請求項1記載の透明導電膜の形成方法。
- 前記不活性ガス雰囲気が、希ガス、二酸化炭素及び窒素から選ばれた少なくとも1種の不活性ガスからなる雰囲気であり、前記還元性ガス雰囲気が、水素、一酸化炭素及び低級アルコールから選ばれた少なくとも1種の還元性ガスからなる雰囲気であり、前記酸化性ガス雰囲気が酸素元素含有ガスから選ばれた少なくとも1種の酸化性ガスからなる雰囲気であることを特徴とする請求項1又は2記載の透明導電膜の形成方法。
- 前記真空雰囲気が、希ガス、二酸化炭素及び窒素から選ばれた少なくとも1種の不活性ガス、酸素元素含有ガスから選ばれた少なくとも1種の酸化性ガス、水素、一酸化炭素及び低級アルコールから選ばれた少なくとも1種の還元性ガス、又は該不活性ガスと酸化性ガス若しくは還元性ガスとからなる混合ガスを含んでいることを特徴とする請求項2記載の透明導電膜の形成方法。
- 前記酸化性ガス雰囲気が、酸素、酸素含有ガス、水蒸気又は水蒸気含有ガスを含んでいることを特徴とする請求項1〜4のいずれかに記載の透明導電膜の形成方法。
- 前記金属微粒子及び合金微粒子が、その微粒子の周りに有機化合物が付着してなる微粒子であることを特徴とする請求項1〜5のいずれかに記載の透明導電膜の形成方法。
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JP2004047342A JP4814491B2 (ja) | 2004-02-24 | 2004-02-24 | 透明導電膜の形成方法及び透明電極 |
TW94103236A TW200535090A (en) | 2004-02-24 | 2005-02-02 | Dispersion liquid for forming transparent conductive film, method for forming transparent conductive film and transparent electrode |
PCT/JP2005/003009 WO2005081265A1 (ja) | 2004-02-24 | 2005-02-24 | 透明導電膜形成用分散液、透明導電膜の形成方法及び透明電極 |
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JP2007182605A (ja) * | 2006-01-06 | 2007-07-19 | Konica Minolta Holdings Inc | 薄膜形成方法及び薄膜 |
TWI309050B (en) * | 2006-04-03 | 2009-04-21 | Ind Tech Res Inst | Azo transparent conducting film with metallic nano particles and method of producing thereof |
CN101496117B (zh) * | 2006-07-28 | 2012-04-18 | 株式会社爱发科 | 透明导电膜的成膜方法 |
JP2008182141A (ja) * | 2007-01-26 | 2008-08-07 | Seiko Epson Corp | 紫外線検出センサー、紫外線検出センサーの製造方法、紫外線の検出方法及び太陽電池 |
JP2008258050A (ja) * | 2007-04-06 | 2008-10-23 | Ulvac Japan Ltd | 透明導電膜形成用塗布液、透明導電膜の形成方法及び透明電極 |
JP5222486B2 (ja) * | 2007-04-11 | 2013-06-26 | 株式会社アルバック | 透明導電膜の形成方法 |
TWI491751B (zh) * | 2010-10-29 | 2015-07-11 | 鴻海精密工業股份有限公司 | 鍍膜件及其製備方法 |
TWI490353B (zh) * | 2010-10-29 | 2015-07-01 | Hon Hai Prec Ind Co Ltd | 鍍膜件及其製備方法 |
CN103451618B (zh) * | 2013-08-15 | 2016-06-15 | 京东方科技集团股份有限公司 | 一种透明导电氧化物膜层的制备方法 |
WO2016088882A1 (ja) * | 2014-12-05 | 2016-06-09 | 富士フイルム株式会社 | 金属酸化物膜の製造方法、金属酸化物膜、薄膜トランジスタ、薄膜トランジスタの製造方法、電子デバイス、及び紫外線照射装置 |
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JPS6196609A (ja) * | 1984-10-15 | 1986-05-15 | 大阪特殊合金株式会社 | 透明導電膜 |
JPH02234309A (ja) * | 1989-03-06 | 1990-09-17 | Japan Synthetic Rubber Co Ltd | 導電性皮膜形成用組成物 |
JPH06139822A (ja) * | 1992-10-23 | 1994-05-20 | Asahi Glass Co Ltd | 透明導電膜、低反射帯電防止膜およびこれらの製造方法 |
KR100472496B1 (ko) * | 1997-07-23 | 2005-05-16 | 삼성에스디아이 주식회사 | 투명도전성조성물,이로부터형성된투명도전막및그제조방법 |
JP4377003B2 (ja) * | 1999-07-23 | 2009-12-02 | 日本曹達株式会社 | 透明導電膜のシート抵抗値の調整方法及び透明導電膜の形成方法 |
JP4099911B2 (ja) * | 1999-10-07 | 2008-06-11 | 日立電線株式会社 | 透明導電膜形成基板及び形成方法 |
JP4902048B2 (ja) * | 2001-01-11 | 2012-03-21 | 日揮触媒化成株式会社 | 透明導電性被膜付基材および表示装置 |
JP2003249131A (ja) * | 2002-02-26 | 2003-09-05 | Fuji Photo Film Co Ltd | 透明導電膜の製造方法 |
JP4002469B2 (ja) * | 2002-05-21 | 2007-10-31 | 触媒化成工業株式会社 | インジウム系金属微粒子の製造方法、インジウム系金属微粒子を含む透明導電性被膜形成用塗布液、分散ゾル、透明導電性被膜付基材、表示装置 |
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JP2005243249A (ja) | 2005-09-08 |
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