JP4809410B2 - 圧電デバイスとその製造方法 - Google Patents

圧電デバイスとその製造方法 Download PDF

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Publication number
JP4809410B2
JP4809410B2 JP2008251180A JP2008251180A JP4809410B2 JP 4809410 B2 JP4809410 B2 JP 4809410B2 JP 2008251180 A JP2008251180 A JP 2008251180A JP 2008251180 A JP2008251180 A JP 2008251180A JP 4809410 B2 JP4809410 B2 JP 4809410B2
Authority
JP
Japan
Prior art keywords
layer
electrode
base
piezoelectric
piezoelectric device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008251180A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010087573A5 (OSRAM
JP2010087573A (ja
Inventor
浩 川原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP2008251180A priority Critical patent/JP4809410B2/ja
Priority to TW98127547A priority patent/TW201014156A/zh
Priority to PCT/JP2009/004789 priority patent/WO2010035457A1/ja
Priority to CN2009801320324A priority patent/CN102124648A/zh
Priority to US13/120,256 priority patent/US8610337B2/en
Priority to EP09815879A priority patent/EP2343802A4/en
Publication of JP2010087573A publication Critical patent/JP2010087573A/ja
Publication of JP2010087573A5 publication Critical patent/JP2010087573A5/ja
Application granted granted Critical
Publication of JP4809410B2 publication Critical patent/JP4809410B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0595—Holders or supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2008251180A 2008-09-29 2008-09-29 圧電デバイスとその製造方法 Expired - Fee Related JP4809410B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008251180A JP4809410B2 (ja) 2008-09-29 2008-09-29 圧電デバイスとその製造方法
TW98127547A TW201014156A (en) 2008-09-29 2009-08-17 Piezoelectric device and method for manufacturing same
CN2009801320324A CN102124648A (zh) 2008-09-29 2009-09-24 压电装置及其制造方法
US13/120,256 US8610337B2 (en) 2008-09-29 2009-09-24 Piezoelectric device and method for manufacturing same
PCT/JP2009/004789 WO2010035457A1 (ja) 2008-09-29 2009-09-24 圧電デバイスとその製造方法
EP09815879A EP2343802A4 (en) 2008-09-29 2009-09-24 PIEZOELECTRIC DEVICE AND METHOD FOR THE PRODUCTION THEREOF

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008251180A JP4809410B2 (ja) 2008-09-29 2008-09-29 圧電デバイスとその製造方法

Publications (3)

Publication Number Publication Date
JP2010087573A JP2010087573A (ja) 2010-04-15
JP2010087573A5 JP2010087573A5 (OSRAM) 2011-03-24
JP4809410B2 true JP4809410B2 (ja) 2011-11-09

Family

ID=42059470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008251180A Expired - Fee Related JP4809410B2 (ja) 2008-09-29 2008-09-29 圧電デバイスとその製造方法

Country Status (6)

Country Link
US (1) US8610337B2 (OSRAM)
EP (1) EP2343802A4 (OSRAM)
JP (1) JP4809410B2 (OSRAM)
CN (1) CN102124648A (OSRAM)
TW (1) TW201014156A (OSRAM)
WO (1) WO2010035457A1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4865002B2 (ja) * 2009-04-15 2012-02-01 日本電波工業株式会社 水晶センサー及び感知装置
WO2011136070A1 (ja) * 2010-04-27 2011-11-03 京セラ株式会社 弾性波装置およびその製造方法
TWI424583B (zh) * 2011-07-25 2014-01-21 國立清華大學 薄膜太陽能電池的製造方法
WO2013047544A1 (ja) * 2011-09-30 2013-04-04 株式会社村田製作所 超音波センサ
JP5930526B2 (ja) * 2012-02-20 2016-06-08 日本電波工業株式会社 圧電振動素子及び圧電デバイス
JP5972598B2 (ja) * 2012-02-22 2016-08-17 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
WO2013128496A1 (ja) 2012-03-02 2013-09-06 富士通株式会社 水晶振動子及びその製造方法
JP5980530B2 (ja) * 2012-03-15 2016-08-31 日本電波工業株式会社 圧電デバイス及び圧電デバイスの製造方法
EP2736169B1 (en) * 2012-08-17 2016-09-14 NGK Insulators, Ltd. Composite substrate, elastic surface wave device, and method for producing composite substrate
JP2014197731A (ja) * 2013-03-29 2014-10-16 セイコーエプソン株式会社 振動デバイス、振動デバイスの製造方法、電子機器、移動体
US9257959B2 (en) 2013-03-29 2016-02-09 Seiko Epson Corporation Resonator element, resonator, oscillator, electronic apparatus, sensor, and moving object
JP6135296B2 (ja) * 2013-05-20 2017-05-31 富士通株式会社 パッケージ構造及びパッケージ構造を基板に接合する方法
JP6371518B2 (ja) * 2013-12-17 2018-08-08 太陽誘電株式会社 圧電薄膜共振器およびその製造方法、フィルタ並びにデュプレクサ
WO2015102080A1 (ja) * 2014-01-06 2015-07-09 株式会社大真空 圧電振動デバイス、及び圧電振動デバイスと回路基板との接合構造
JPWO2016111038A1 (ja) * 2015-01-08 2017-09-07 株式会社村田製作所 圧電振動部品及びその製造方法
JP6468350B2 (ja) * 2015-04-27 2019-02-13 株式会社村田製作所 共振子及び共振装置
WO2018222706A1 (en) * 2017-05-30 2018-12-06 Metis Design Corporation Electrical via providing electrode pair access on a single side of a device
JP6944665B2 (ja) * 2019-03-29 2021-10-06 株式会社村田製作所 振動子及び振動子の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0559951U (ja) * 1992-01-09 1993-08-06 株式会社村田製作所 圧電部品
JPH1022773A (ja) * 1996-07-03 1998-01-23 Matsushita Electric Ind Co Ltd 振動子とその製造方法
JP3864467B2 (ja) * 1996-10-23 2006-12-27 松下電器産業株式会社 電子部品の製造方法
TW569424B (en) * 2000-03-17 2004-01-01 Matsushita Electric Industrial Co Ltd Module with embedded electric elements and the manufacturing method thereof
JP2002319838A (ja) * 2001-02-19 2002-10-31 Seiko Epson Corp 圧電デバイス及びそのパッケージ
JP3736395B2 (ja) * 2001-07-12 2006-01-18 株式会社村田製作所 圧電素子、圧電素子の製造方法
JP2006180169A (ja) * 2004-12-22 2006-07-06 Kyocera Kinseki Corp 振動子パッケージの製造方法
JP2006197278A (ja) * 2005-01-14 2006-07-27 Seiko Instruments Inc 表面実装型圧電振動子、発振器、及び電子機器
JP4891235B2 (ja) * 2005-06-01 2012-03-07 パナソニック株式会社 回路基板とその製造方法及びこれを用いた電子部品
JP4777745B2 (ja) * 2005-11-01 2011-09-21 セイコーインスツル株式会社 圧電振動子及びこれを備える発振器、電波時計並びに電子機器
JP4906361B2 (ja) 2006-01-27 2012-03-28 三井化学株式会社 無機酸化物超微粒子およびその製造法
JP5007522B2 (ja) * 2006-05-01 2012-08-22 セイコーエプソン株式会社 圧電振動子およびその製造方法
JP2008147895A (ja) * 2006-12-08 2008-06-26 Epson Toyocom Corp 水晶振動子、水晶振動子の製造方法
JP2008211543A (ja) * 2007-02-27 2008-09-11 Epson Toyocom Corp 水晶振動子および水晶振動子の製造方法
JP4647677B2 (ja) * 2008-08-11 2011-03-09 日本電波工業株式会社 圧電デバイス
JP2010141293A (ja) * 2008-11-14 2010-06-24 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
JP4763769B2 (ja) * 2008-12-03 2011-08-31 日本電波工業株式会社 圧電デバイスの製造方法
JP4988799B2 (ja) * 2009-09-16 2012-08-01 日本電波工業株式会社 圧電振動デバイス及び圧電振動デバイスの製造方法

Also Published As

Publication number Publication date
EP2343802A4 (en) 2012-10-17
EP2343802A1 (en) 2011-07-13
JP2010087573A (ja) 2010-04-15
TW201014156A (en) 2010-04-01
CN102124648A (zh) 2011-07-13
US8610337B2 (en) 2013-12-17
US20110309720A1 (en) 2011-12-22
WO2010035457A1 (ja) 2010-04-01

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