JP4789551B2 - 有機el成膜装置 - Google Patents
有機el成膜装置 Download PDFInfo
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- JP4789551B2 JP4789551B2 JP2005258558A JP2005258558A JP4789551B2 JP 4789551 B2 JP4789551 B2 JP 4789551B2 JP 2005258558 A JP2005258558 A JP 2005258558A JP 2005258558 A JP2005258558 A JP 2005258558A JP 4789551 B2 JP4789551 B2 JP 4789551B2
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- Prior art keywords
- vapor deposition
- deposition material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/246—Replenishment of source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005258558A JP4789551B2 (ja) | 2005-09-06 | 2005-09-06 | 有機el成膜装置 |
| US11/510,996 US20070054051A1 (en) | 2005-09-06 | 2006-08-28 | Deposition device |
| TW095131779A TWI438826B (zh) | 2005-09-06 | 2006-08-29 | 沉積裝置 |
| CN2011101021073A CN102199745A (zh) | 2005-09-06 | 2006-09-06 | 沉积装置 |
| CN2006101281807A CN1928149B (zh) | 2005-09-06 | 2006-09-06 | 沉积装置和用于制造显示装置的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005258558A JP4789551B2 (ja) | 2005-09-06 | 2005-09-06 | 有機el成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007070687A JP2007070687A (ja) | 2007-03-22 |
| JP2007070687A5 JP2007070687A5 (enExample) | 2008-09-11 |
| JP4789551B2 true JP4789551B2 (ja) | 2011-10-12 |
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| JP2005258558A Expired - Fee Related JP4789551B2 (ja) | 2005-09-06 | 2005-09-06 | 有機el成膜装置 |
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| JP (1) | JP4789551B2 (enExample) |
| CN (2) | CN102199745A (enExample) |
| TW (1) | TWI438826B (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7612498B2 (en) * | 2003-11-27 | 2009-11-03 | Toshiba Matsushita Display Technology Co., Ltd. | Display element, optical device, and optical device manufacturing method |
| JP4974504B2 (ja) * | 2005-10-13 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 成膜装置、発光装置の作製方法 |
| DE102006026576A1 (de) * | 2006-06-06 | 2008-01-10 | Aixtron Ag | Vorrichtung und Verfahren zum Aufdampfen eines pulverförmigen organischen Ausgangsstoffs |
| JP2008247673A (ja) * | 2007-03-30 | 2008-10-16 | Rohm Co Ltd | 材料供給装置 |
| JP2008274322A (ja) * | 2007-04-26 | 2008-11-13 | Sony Corp | 蒸着装置 |
| US8431432B2 (en) * | 2007-04-27 | 2013-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device |
| KR101128747B1 (ko) * | 2007-09-10 | 2012-03-23 | 가부시키가이샤 알박 | 유기 박막 제조 방법 |
| JPWO2009034916A1 (ja) * | 2007-09-10 | 2010-12-24 | 株式会社アルバック | 蒸気放出装置、有機薄膜蒸着装置及び有機薄膜蒸着方法 |
| WO2009034915A1 (ja) * | 2007-09-10 | 2009-03-19 | Ulvac, Inc. | 蒸着装置 |
| CN101803460B (zh) * | 2007-09-10 | 2012-01-25 | 株式会社爱发科 | 有机材料蒸气产生装置、成膜源、成膜装置 |
| US20090081365A1 (en) * | 2007-09-20 | 2009-03-26 | Cok Ronald S | Deposition apparatus for temperature sensitive materials |
| KR20100013808A (ko) * | 2008-08-01 | 2010-02-10 | 삼성모바일디스플레이주식회사 | 유기물 증착 장치 |
| JP5469950B2 (ja) * | 2008-08-08 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| US20100147217A1 (en) * | 2008-12-12 | 2010-06-17 | Edgar Haberkorn | Integration of a processing bench in an inline coating system |
| KR101068597B1 (ko) * | 2009-01-16 | 2011-09-30 | 에스엔유 프리시젼 주식회사 | 증발 장치 및 박막 증착 장치 및 이의 원료 제공 방법 |
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| JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Samsung Display Co.,Ltd. | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| US8696815B2 (en) | 2009-09-01 | 2014-04-15 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| CN102117701B (zh) * | 2009-12-31 | 2014-08-20 | 鸿富锦精密工业(深圳)有限公司 | 染料敏化太阳能电池电极制造设备及太阳能电池制造方法 |
| US20110195187A1 (en) * | 2010-02-10 | 2011-08-11 | Apple Inc. | Direct liquid vaporization for oleophobic coatings |
| TW201142066A (en) | 2010-05-18 | 2011-12-01 | Hon Hai Prec Ind Co Ltd | Coating device |
| CN102251218B (zh) * | 2010-05-18 | 2014-04-23 | 鸿富锦精密工业(深圳)有限公司 | 镀膜装置 |
| JP2012169128A (ja) * | 2011-02-14 | 2012-09-06 | Ulvac Japan Ltd | 薄膜製造装置 |
| JPWO2012127982A1 (ja) * | 2011-03-18 | 2014-07-24 | 東京エレクトロン株式会社 | 成膜装置、成膜方法、有機発光素子の製造方法、及び有機発光素子 |
| KR20130004830A (ko) * | 2011-07-04 | 2013-01-14 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법 |
| JP5358697B2 (ja) * | 2012-01-20 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | 成膜装置 |
| DE102012107824B3 (de) * | 2012-08-24 | 2014-02-06 | Technische Universität Braunschweig Carolo-Wilhelmina | Verfahren zur Beschichtung eines Substrats mit mehreren Materialschichten und Mehrmaterialienabgabeeinrichtung dafür |
| KR20140053625A (ko) * | 2012-10-26 | 2014-05-08 | 삼성디스플레이 주식회사 | 유기물 증착 장치 |
| JP6160120B2 (ja) * | 2013-02-28 | 2017-07-12 | セイコーエプソン株式会社 | 超音波トランスデューサーデバイス、超音波測定装置、ヘッドユニット、プローブ及び超音波画像装置 |
| KR102081284B1 (ko) * | 2013-04-18 | 2020-02-26 | 삼성디스플레이 주식회사 | 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치 |
| JP6276007B2 (ja) * | 2013-11-26 | 2018-02-07 | 株式会社カネカ | 蒸着装置、成膜方法及び有機el装置の製造方法 |
| JP6584067B2 (ja) * | 2014-05-30 | 2019-10-02 | 日立造船株式会社 | 真空蒸着装置 |
| CN103996801B (zh) * | 2014-06-12 | 2017-05-31 | 深圳市华星光电技术有限公司 | 基板前处理方法及装置 |
| WO2017048696A1 (en) * | 2015-09-16 | 2017-03-23 | Advantech Global, Ltd | Evaporative deposition with improved deposition source |
| JP6585180B2 (ja) * | 2015-10-22 | 2019-10-02 | 東京エレクトロン株式会社 | 膜形成装置及び膜形成方法 |
| DE102016223415A1 (de) * | 2015-12-22 | 2017-06-22 | Heidelberger Druckmaschinen Ag | Vorrichtung zum Bedrucken eines Objekts |
| CN106098600B (zh) * | 2016-08-23 | 2019-06-28 | 沈阳拓荆科技有限公司 | 复合薄膜封装设备 |
| KR102221194B1 (ko) * | 2017-02-21 | 2021-03-02 | 가부시키가이샤 아루박 | 기화기 및 소자 구조체의 제조 장치 |
| KR101821926B1 (ko) * | 2017-06-02 | 2018-01-24 | 캐논 톡키 가부시키가이샤 | 진공 증착 장치 및 이를 사용한 디바이스 제조방법 |
| WO2019171545A1 (ja) * | 2018-03-08 | 2019-09-12 | 堺ディスプレイプロダクト株式会社 | 成膜装置、蒸着膜の成膜方法および有機el表示装置の製造方法 |
| KR20200002242A (ko) * | 2018-06-29 | 2020-01-08 | 캐논 톡키 가부시키가이샤 | 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법 |
| US11629405B2 (en) * | 2018-07-18 | 2023-04-18 | Massachusetts Institute Of Technology | Alternating multi-source vapor transport deposition |
| CN109207954B (zh) * | 2018-10-19 | 2021-04-20 | 布勒莱宝光学设备(北京)有限公司 | 多色膜玻璃及其生产方法与设备 |
| DE102019003764A1 (de) * | 2019-05-29 | 2020-12-03 | Schneider Gmbh & Co. Kg | Beschichtungsvorrichtung, Verdampfungseinrichtung und Beschichtungsquelle |
| JP6754474B2 (ja) * | 2019-06-25 | 2020-09-09 | 堺ディスプレイプロダクト株式会社 | 成膜装置、蒸着膜の成膜方法および有機el表示装置の製造方法 |
| DE102020118015A1 (de) * | 2020-07-08 | 2022-01-13 | Thyssenkrupp Steel Europe Ag | Beschichtungsvorrichtung zum Ablagern eines Beschichtungsmaterials auf einem Substrat |
| EP4273295A1 (en) * | 2022-05-03 | 2023-11-08 | Universitat de València | Improved synthesis process of thin films by vapour deposition |
| CN114812199B (zh) * | 2022-06-22 | 2023-10-27 | 宁夏三元中泰冶金有限公司 | 一种硅铁矿热炉的电极控制系统 |
| CN119265549B (zh) * | 2024-09-30 | 2025-09-26 | 苏州精材半导体科技有限公司 | 连续式化学气相沉积方法、系统、程序和存储介质 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59177365A (ja) * | 1983-03-24 | 1984-10-08 | Matsushita Electric Ind Co Ltd | 蒸発方法とその装置 |
| JPS63249148A (ja) * | 1987-04-03 | 1988-10-17 | Toyo Ink Mfg Co Ltd | 電子写真感光体の製造法 |
| KR920003591B1 (ko) * | 1988-04-11 | 1992-05-04 | 미쯔비시주우고오교오 가부시기가이샤 | 연속진공증착장치 |
| JPH04141580A (ja) * | 1990-09-28 | 1992-05-15 | Olympus Optical Co Ltd | レーザーフラッシュ蒸着装置 |
| US6049167A (en) * | 1997-02-17 | 2000-04-11 | Tdk Corporation | Organic electroluminescent display device, and method and system for making the same |
| US6340501B1 (en) * | 1997-05-08 | 2002-01-22 | Matsushita Electric Industrial Co., Ltd. | Device and method for manufacturing an optical recording medium |
| US5945163A (en) * | 1998-02-19 | 1999-08-31 | First Solar, Llc | Apparatus and method for depositing a material on a substrate |
| GB9900955D0 (en) * | 1999-01-15 | 1999-03-10 | Imperial College | Material deposition |
| TW490714B (en) * | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
| US6395648B1 (en) * | 2000-02-25 | 2002-05-28 | Wafermasters, Inc. | Wafer processing system |
| US7517551B2 (en) * | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
| US6572706B1 (en) * | 2000-06-19 | 2003-06-03 | Simplus Systems Corporation | Integrated precursor delivery system |
| ATE497028T1 (de) * | 2000-06-22 | 2011-02-15 | Panasonic Elec Works Co Ltd | Vorrichtung und verfahren zum vakuum-ausdampfen |
| JP3541294B2 (ja) * | 2000-09-01 | 2004-07-07 | 独立行政法人 科学技術振興機構 | 有機エレクトロルミネッセンス薄膜の作製方法と作製装置 |
| US6641674B2 (en) * | 2000-11-10 | 2003-11-04 | Helix Technology Inc. | Movable evaporation device |
| JP2003231963A (ja) * | 2002-02-12 | 2003-08-19 | Sanyo Shinku Kogyo Kk | 真空蒸着方法とその装置 |
| SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
| US7309269B2 (en) * | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
| TWI336905B (en) * | 2002-05-17 | 2011-02-01 | Semiconductor Energy Lab | Evaporation method, evaporation device and method of fabricating light emitting device |
| US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
| US7118783B2 (en) * | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
| US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| TWI277363B (en) * | 2002-08-30 | 2007-03-21 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| WO2004028214A1 (en) * | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and manufacturing method of light emitting device |
| US7211461B2 (en) * | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| JP4493926B2 (ja) * | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
| US7211454B2 (en) * | 2003-07-25 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate |
| US8123862B2 (en) * | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
| US7339139B2 (en) * | 2003-10-03 | 2008-03-04 | Darly Custom Technology, Inc. | Multi-layered radiant thermal evaporator and method of use |
| JP4545504B2 (ja) * | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 膜形成方法、発光装置の作製方法 |
| JP4974504B2 (ja) * | 2005-10-13 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 成膜装置、発光装置の作製方法 |
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2006
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- 2006-08-29 TW TW095131779A patent/TWI438826B/zh not_active IP Right Cessation
- 2006-09-06 CN CN2011101021073A patent/CN102199745A/zh active Pending
- 2006-09-06 CN CN2006101281807A patent/CN1928149B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007070687A (ja) | 2007-03-22 |
| TW200721264A (en) | 2007-06-01 |
| CN102199745A (zh) | 2011-09-28 |
| CN1928149B (zh) | 2011-06-15 |
| TWI438826B (zh) | 2014-05-21 |
| US20070054051A1 (en) | 2007-03-08 |
| CN1928149A (zh) | 2007-03-14 |
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