JP4786111B2 - 弗化水素を含有する弗素化溶媒組成物 - Google Patents

弗化水素を含有する弗素化溶媒組成物 Download PDF

Info

Publication number
JP4786111B2
JP4786111B2 JP2001573535A JP2001573535A JP4786111B2 JP 4786111 B2 JP4786111 B2 JP 4786111B2 JP 2001573535 A JP2001573535 A JP 2001573535A JP 2001573535 A JP2001573535 A JP 2001573535A JP 4786111 B2 JP4786111 B2 JP 4786111B2
Authority
JP
Japan
Prior art keywords
composition
cleaning
wafer
etch
hydrogen fluoride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001573535A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003529675A (ja
JP2003529675A5 (enExample
Inventor
フレデリック・イー・ベーア
ローレンス・エイ・ザゼラ
ポール・イー・ラージタール
マイケル・ジェイ・ペアレント
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2003529675A publication Critical patent/JP2003529675A/ja
Publication of JP2003529675A5 publication Critical patent/JP2003529675A5/ja
Application granted granted Critical
Publication of JP4786111B2 publication Critical patent/JP4786111B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/24—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5018—Halogenated solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H10P70/234—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Detergent Compositions (AREA)
  • Weting (AREA)
JP2001573535A 2000-03-31 2000-07-06 弗化水素を含有する弗素化溶媒組成物 Expired - Fee Related JP4786111B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/541,453 US6310018B1 (en) 2000-03-31 2000-03-31 Fluorinated solvent compositions containing hydrogen fluoride
US09/541,453 2000-03-31
PCT/US2000/018516 WO2001075955A1 (en) 2000-03-31 2000-07-06 Fluorinated solvent compositions containing hydrogen fluoride

Publications (3)

Publication Number Publication Date
JP2003529675A JP2003529675A (ja) 2003-10-07
JP2003529675A5 JP2003529675A5 (enExample) 2007-08-30
JP4786111B2 true JP4786111B2 (ja) 2011-10-05

Family

ID=24159658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001573535A Expired - Fee Related JP4786111B2 (ja) 2000-03-31 2000-07-06 弗化水素を含有する弗素化溶媒組成物

Country Status (6)

Country Link
US (2) US6310018B1 (enExample)
EP (1) EP1269527A1 (enExample)
JP (1) JP4786111B2 (enExample)
KR (2) KR100785131B1 (enExample)
AU (1) AU2000259171A1 (enExample)
WO (1) WO2001075955A1 (enExample)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6552090B1 (en) * 1997-09-15 2003-04-22 3M Innovative Properties Company Perfluoroalkyl haloalkyl ethers and compositions and applications thereof
US6100198A (en) * 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
US6872984B1 (en) 1998-07-29 2005-03-29 Silicon Light Machines Corporation Method of sealing a hermetic lid to a semiconductor die at an angle
US6303986B1 (en) 1998-07-29 2001-10-16 Silicon Light Machines Method of and apparatus for sealing an hermetic lid to a semiconductor die
US6956878B1 (en) 2000-02-07 2005-10-18 Silicon Light Machines Corporation Method and apparatus for reducing laser speckle using polarization averaging
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
US6372700B1 (en) * 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
TWI259202B (en) * 2000-06-01 2006-08-01 Asahi Kasei Corp Cleaning method and cleaning apparatus
US6387723B1 (en) * 2001-01-19 2002-05-14 Silicon Light Machines Reduced surface charging in silicon-based devices
TWI242805B (en) * 2001-02-15 2005-11-01 United Microelectronics Corp Post metal etch cleaning method
US7177081B2 (en) 2001-03-08 2007-02-13 Silicon Light Machines Corporation High contrast grating light valve type device
US6707591B2 (en) 2001-04-10 2004-03-16 Silicon Light Machines Angled illumination for a single order light modulator based projection system
US6865346B1 (en) 2001-06-05 2005-03-08 Silicon Light Machines Corporation Fiber optic transceiver
US6747781B2 (en) 2001-06-25 2004-06-08 Silicon Light Machines, Inc. Method, apparatus, and diffuser for reducing laser speckle
US6782205B2 (en) 2001-06-25 2004-08-24 Silicon Light Machines Method and apparatus for dynamic equalization in wavelength division multiplexing
US6829092B2 (en) 2001-08-15 2004-12-07 Silicon Light Machines, Inc. Blazed grating light valve
US6930364B2 (en) 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
US6696364B2 (en) * 2001-10-19 2004-02-24 Stmicroelectronics S.R.L. Method for manipulating MEMS devices, integrated on a wafer semiconductor and intended to be diced one from the other, and relevant support
US6956995B1 (en) 2001-11-09 2005-10-18 Silicon Light Machines Corporation Optical communication arrangement
JP4042412B2 (ja) * 2002-01-11 2008-02-06 ソニー株式会社 洗浄及び乾燥方法
US6800238B1 (en) 2002-01-15 2004-10-05 Silicon Light Machines, Inc. Method for domain patterning in low coercive field ferroelectrics
US6728023B1 (en) 2002-05-28 2004-04-27 Silicon Light Machines Optical device arrays with optimized image resolution
US6767751B2 (en) 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US7054515B1 (en) 2002-05-30 2006-05-30 Silicon Light Machines Corporation Diffractive light modulator-based dynamic equalizer with integrated spectral monitor
US6841079B2 (en) * 2002-05-31 2005-01-11 3M Innovative Properties Company Fluorochemical treatment for silicon articles
US6822797B1 (en) 2002-05-31 2004-11-23 Silicon Light Machines, Inc. Light modulator structure for producing high-contrast operation using zero-order light
US6699829B2 (en) * 2002-06-07 2004-03-02 Kyzen Corporation Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds
US6829258B1 (en) 2002-06-26 2004-12-07 Silicon Light Machines, Inc. Rapidly tunable external cavity laser
US6813059B2 (en) 2002-06-28 2004-11-02 Silicon Light Machines, Inc. Reduced formation of asperities in contact micro-structures
US6908201B2 (en) 2002-06-28 2005-06-21 Silicon Light Machines Corporation Micro-support structures
US6714337B1 (en) 2002-06-28 2004-03-30 Silicon Light Machines Method and device for modulating a light beam and having an improved gamma response
US6801354B1 (en) 2002-08-20 2004-10-05 Silicon Light Machines, Inc. 2-D diffraction grating for substantially eliminating polarization dependent losses
US7057795B2 (en) 2002-08-20 2006-06-06 Silicon Light Machines Corporation Micro-structures with individually addressable ribbon pairs
US7018937B2 (en) * 2002-08-29 2006-03-28 Micron Technology, Inc. Compositions for removal of processing byproducts and method for using same
US20040058551A1 (en) * 2002-09-23 2004-03-25 Meagley Robert P. Fluorous cleaning solution for lithographic processing
US6712480B1 (en) 2002-09-27 2004-03-30 Silicon Light Machines Controlled curvature of stressed micro-structures
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
US6928207B1 (en) 2002-12-12 2005-08-09 Silicon Light Machines Corporation Apparatus for selectively blocking WDM channels
US6884338B2 (en) 2002-12-16 2005-04-26 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US6858124B2 (en) 2002-12-16 2005-02-22 3M Innovative Properties Company Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor
US7147767B2 (en) 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US6987600B1 (en) 2002-12-17 2006-01-17 Silicon Light Machines Corporation Arbitrary phase profile for better equalization in dynamic gain equalizer
US7057819B1 (en) 2002-12-17 2006-06-06 Silicon Light Machines Corporation High contrast tilting ribbon blazed grating
US20040118621A1 (en) * 2002-12-18 2004-06-24 Curtis Marc D. Live hydraulics for utility vehicles
US6934070B1 (en) 2002-12-18 2005-08-23 Silicon Light Machines Corporation Chirped optical MEM device
US6927891B1 (en) 2002-12-23 2005-08-09 Silicon Light Machines Corporation Tilt-able grating plane for improved crosstalk in 1×N blaze switches
US7068372B1 (en) 2003-01-28 2006-06-27 Silicon Light Machines Corporation MEMS interferometer-based reconfigurable optical add-and-drop multiplexor
US7286764B1 (en) 2003-02-03 2007-10-23 Silicon Light Machines Corporation Reconfigurable modulator-based optical add-and-drop multiplexer
US6947613B1 (en) 2003-02-11 2005-09-20 Silicon Light Machines Corporation Wavelength selective switch and equalizer
US6922272B1 (en) 2003-02-14 2005-07-26 Silicon Light Machines Corporation Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices
US6829077B1 (en) 2003-02-28 2004-12-07 Silicon Light Machines, Inc. Diffractive light modulator with dynamically rotatable diffraction plane
US7391973B1 (en) 2003-02-28 2008-06-24 Silicon Light Machines Corporation Two-stage gain equalizer
US7027202B1 (en) 2003-02-28 2006-04-11 Silicon Light Machines Corp Silicon substrate as a light modulator sacrificial layer
US6806997B1 (en) 2003-02-28 2004-10-19 Silicon Light Machines, Inc. Patterned diffractive light modulator ribbon for PDL reduction
US6922273B1 (en) 2003-02-28 2005-07-26 Silicon Light Machines Corporation PDL mitigation structure for diffractive MEMS and gratings
US7042611B1 (en) 2003-03-03 2006-05-09 Silicon Light Machines Corporation Pre-deflected bias ribbons
CN100412184C (zh) * 2003-06-27 2008-08-20 旭硝子株式会社 清洗漂洗方法
JP2005101711A (ja) * 2003-09-22 2005-04-14 Renesas Technology Corp 固体撮像装置およびその製造方法
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
US6930367B2 (en) * 2003-10-31 2005-08-16 Robert Bosch Gmbh Anti-stiction technique for thin film and wafer-bonded encapsulated microelectromechanical systems
US7071154B2 (en) * 2003-12-18 2006-07-04 3M Innovative Properties Company Azeotrope-like compositions and their use
US7514012B2 (en) * 2004-01-27 2009-04-07 Texas Instruments Incorporated Pre-oxidization of deformable elements of microstructures
JP2005217262A (ja) * 2004-01-30 2005-08-11 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
US8119537B2 (en) * 2004-09-02 2012-02-21 Micron Technology, Inc. Selective etching of oxides to metal nitrides and metal oxides
US20060054595A1 (en) * 2004-09-10 2006-03-16 Honeywell International Inc. Selective hafnium oxide etchant
US7394103B2 (en) * 2004-09-13 2008-07-01 Uchicago Argonne, Llc All diamond self-aligned thin film transistor
JP4559250B2 (ja) * 2005-02-16 2010-10-06 シチズンファインテックミヨタ株式会社 アクチュエータ、及びその製造方法
US7449355B2 (en) * 2005-04-27 2008-11-11 Robert Bosch Gmbh Anti-stiction technique for electromechanical systems and electromechanical device employing same
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
US20070129273A1 (en) * 2005-12-07 2007-06-07 Clark Philip G In situ fluoride ion-generating compositions and uses thereof
US20070170528A1 (en) 2006-01-20 2007-07-26 Aaron Partridge Wafer encapsulated microelectromechanical structure and method of manufacturing same
US7654010B2 (en) * 2006-02-23 2010-02-02 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
DE102006030588A1 (de) * 2006-07-03 2008-01-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Flüssigkeitsstrahlgeführtes Ätzverfahren zum Materialabtrag an Festkörpern sowie dessen Verwendung
JP2008066351A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
JP4803821B2 (ja) 2007-03-23 2011-10-26 大日本スクリーン製造株式会社 基板処理装置
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
US20090253268A1 (en) * 2008-04-03 2009-10-08 Honeywell International, Inc. Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same
JP5960439B2 (ja) * 2012-01-27 2016-08-02 スリーエム イノベイティブ プロパティズ カンパニー 除塵洗浄液およびそれを用いた洗浄方法
JP2016164977A (ja) * 2015-02-27 2016-09-08 キヤノン株式会社 ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法
US11361972B2 (en) * 2019-04-18 2022-06-14 Micron Technology, Inc. Methods for selectively removing more-doped-silicon-dioxide relative to less-doped-silicon-dioxide
CN113710768A (zh) 2019-04-24 2021-11-26 赢创运营有限公司 具有增大的导热率的含有无机颗粒的液体分散体
JP7595585B2 (ja) * 2019-05-10 2024-12-06 スリーエム イノベイティブ プロパティズ カンパニー ハイドロフルオロチオエーテル及びその使用方法
JP7689661B2 (ja) * 2020-01-15 2025-06-09 スリーエム イノベイティブ プロパティズ カンパニー ハイドロフルオロエーテル及びその使用方法
WO2025090723A1 (en) * 2023-10-25 2025-05-01 Versum Materials Us, Llc Hydrofluorocarbon compounds and their use in integrated circuit manufacturing processes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340183A (ja) * 1998-05-27 1999-12-10 Morita Kagaku Kogyo Kk 半導体装置用洗浄液およびそれを用いた半導体装置の製 造方法
JP2000036478A (ja) * 1998-07-07 2000-02-02 Minnesota Mining & Mfg Co <3M> 半導体製造装置における汚染物の洗浄方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1037857A (en) 1963-07-11 1966-08-03 Pennsalt Chemicals Corp Method and composition for cleaning resin coated substrates
DE1298514B (de) 1965-12-02 1969-07-03 Hoechst Ag Verfahren zur Herstellung von Perfluoralkyl-alkyl-aethern
FR2287432A1 (fr) 1974-10-10 1976-05-07 Poudres & Explosifs Ste Nale Nouveaux ethers fluores et leur procede de preparation
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
JPS6039176A (ja) * 1983-08-10 1985-02-28 Daikin Ind Ltd エッチング剤組成物
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
JP2999591B2 (ja) 1991-07-22 2000-01-17 徳三 助川 高純度の真性層を有するＧａＡｓ素子の製造方法
JPH0629235A (ja) * 1992-07-09 1994-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
KR0170794B1 (ko) * 1993-02-04 1999-03-30 이노우에 노리유키 습윤성이 우수한 반도체용 웨트에칭 조성물
JP2589930B2 (ja) 1993-03-05 1997-03-12 工業技術院長 メチル １，１，２，２，３，３−ヘキサフルオロプロピル エーテル及びその製造方法並びにこれを含有する洗浄剤
US5658962A (en) 1994-05-20 1997-08-19 Minnesota Mining And Manufacturing Company Omega-hydrofluoroalkyl ethers, precursor carboxylic acids and derivatives thereof, and their preparation and application
US5478436A (en) * 1994-12-27 1995-12-26 Motorola, Inc. Selective cleaning process for fabricating a semiconductor device
US5925611A (en) 1995-01-20 1999-07-20 Minnesota Mining And Manufacturing Company Cleaning process and composition
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5603750A (en) 1995-08-14 1997-02-18 Minnesota Mining And Manufacturing Company Fluorocarbon fluids as gas carriers to aid in precious and base metal heap leaching operations
US5750797A (en) 1996-04-15 1998-05-12 Minnesota Mining And Manufacturing Company Process for the production of hydrofluoroethers
US6001796A (en) 1996-07-03 1999-12-14 Alliedsignal Inc. Azeotrope-like compositions of 1,1,1,3,3-pentafluoropropane and hydrogen fluoride
CN1125963C (zh) 1997-09-23 2003-10-29 格雷·W·费雷尔 改进的化学干燥和净化系统
FR2768717B1 (fr) 1997-09-24 1999-11-12 Solvay Procede de separation de fluorure d'hydrogene de ses melanges avec un hydrofluoroalcane contenant de 3 a 6 atomes de carbone
US6046368A (en) 1998-03-17 2000-04-04 3M Innovative Properties Company Catalytic process for making hydrofluoroethers
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340183A (ja) * 1998-05-27 1999-12-10 Morita Kagaku Kogyo Kk 半導体装置用洗浄液およびそれを用いた半導体装置の製 造方法
JP2000036478A (ja) * 1998-07-07 2000-02-02 Minnesota Mining & Mfg Co <3M> 半導体製造装置における汚染物の洗浄方法

Also Published As

Publication number Publication date
US6492309B1 (en) 2002-12-10
US6310018B1 (en) 2001-10-30
KR100785131B1 (ko) 2007-12-11
KR20070020150A (ko) 2007-02-16
EP1269527A1 (en) 2003-01-02
AU2000259171A1 (en) 2001-10-15
KR20030007484A (ko) 2003-01-23
JP2003529675A (ja) 2003-10-07
WO2001075955A1 (en) 2001-10-11

Similar Documents

Publication Publication Date Title
JP4786111B2 (ja) 弗化水素を含有する弗素化溶媒組成物
EP1268734B1 (en) Fluorinated solvent compositions containing ozone
US20090192065A1 (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating
JP7114842B2 (ja) 半導体基板の残渣を除去するための洗浄用調合物
TW200306346A (en) Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
JP2007526944A (ja) 水性クリーニング溶液のためのフッ素化スルホンアミド界面活性剤
KR20010024201A (ko) 수성 세정 조성물
CN1902297A (zh) 采用超临界流体/化学制剂去除mems牺牲层
JP2007526653A (ja) 超臨界流体ベースの組成物を用いたケイ素含有粒状物質除去の向上
JP2006505139A (ja) 超臨界二酸化炭素／化学調合物を用いたパターン化されたシリコン／二酸化ケイ素上における粒子状汚染物質の除去
JP2009508359A (ja) 高密度流体／化学配合物を用いるパターン化ケイ素／二酸化ケイ素上の粒子汚染物の除去
KR102173490B1 (ko) 비-수성 텅스텐 상용성 금속 질화물 선택적 에칭제 및 세정제
US20070129273A1 (en) In situ fluoride ion-generating compositions and uses thereof
JP5512554B2 (ja) マイクロエレクトロニクス基板洗浄用組成物
JP2008538013A (ja) 溶媒系中の自己組織化単分子膜を用いた高線量イオン注入フォトレジストの除去
JP2005026338A (ja) 微細構造体用洗浄液

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070706

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070706

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100901

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100914

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110329

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110615

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110712

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110713

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140722

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees