JP2006505139A - 超臨界二酸化炭素/化学調合物を用いたパターン化されたシリコン/二酸化ケイ素上における粒子状汚染物質の除去 - Google Patents
超臨界二酸化炭素/化学調合物を用いたパターン化されたシリコン/二酸化ケイ素上における粒子状汚染物質の除去 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title description 15
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- 239000003795 chemical substances by application Substances 0.000 claims description 2
- GRJJQCWNZGRKAU-UHFFFAOYSA-N pyridin-1-ium;fluoride Chemical compound F.C1=CC=NC=C1 GRJJQCWNZGRKAU-UHFFFAOYSA-N 0.000 claims description 2
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- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- General Chemical & Material Sciences (AREA)
- Emergency Medicine (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
Description
本発明は、その上に粒子状汚染物質を有するパターン化されたシリコン/二酸化ケイ素基板から該汚染物質除去することを目的とした半導体製造に有用な超臨界二酸化炭素系組成物、および半導体基板から粒子状汚染物質を除去するために該組成物を利用する方法に関するものである。
半導体製造分野において、粒子状汚染物質を除去するためのウエハーの洗浄には、さまざまな方法が利用されている。これらの方法として、超音波、高圧ジェット洗浄、エキシマレーザ・アブレーション、二酸化炭素スノージェット手法といったいくつかの名称が挙げられる。
本発明は、粒子状汚染粒子を、上部に該汚染物質を有する基板から除去することを目的とした半導体製造に有用な超臨界二酸化炭素系組成物、および半導体基板から汚染粒子を除去するために該組成物を利用する方法に関するものである。
本発明は、汚染粒子を、上部に該汚染粒子を有する半導体基板から除去するのに極めて有効な超臨界二酸化炭素系洗浄組成物の発見に基づいている。本発明の組成物および方法は、ブランケットとパターン化されたウエハーの両方のシリコン領域および二酸化ケイ素領域からの、有機組成物、無機組成物の両方もしくはいずれか一方の粒子などの表面粒子の除去に有効である。
Claims (28)
- SCCO2と、アルコールと、フッ素源と、場合によりヒドロキシル添加剤と、を含むポストエッチ残留物の洗浄組成物。
- 前記アルコールは、少なくとも1つのC1〜C4アルコールを含む、請求項1に記載の組成物。
- 前記アルコールは、メタノールを含む、請求項1に記載の組成物。
- 前記フッ素源は、フッ化水素(HF)と、化学式、NR3(HF)3の三フッ化水素アミン化合物(式中、各Rは、それぞれ独立に、水素および低級アルキルから選択される)と、フッ化水素−ピリジン(pyr−HF)と、化学式、R4NFのフッ化アンモニウム(式中、各Rは、それぞれ独立に水素および低級アルキルから選択される)と、からなる群から選択されるフッ素含有化合物を含む、請求項1に記載の組成物。
- 前記フッ素源は、フッ化アンモニウム(NH4F)を含む、請求項1に記載の組成物。
- 前記ヒドロキシル添加剤は、ホウ酸を含む、請求項1に記載の組成物。
- 前記ヒドロキシル添加剤は、前記フッ素源の少なくとも一部である、請求項1に記載の組成物。
- 前記ヒドロキシル添加剤と前記フッ素源は、2−フルオロフェノールを含む、請求項1に記載の組成物。
- 前記アルコールは、前記組成物の総重量に基づいて、約5〜約20重量%の範囲内の濃度を有する、請求項1に記載の組成物。
- 前記フッ素源は、前記洗浄組成物の総重量に基づいて、約0.01〜約2.0重量%の濃度を有する、請求項1に記載の組成物。
- フッ化アンモニウムと、フッ素化界面活性剤と、ホウ酸とを含む、請求項1に記載の組成物。
- 前記フッ化アンモニウムは、前記洗浄組成物の総重量に基づいて、約0.1〜約2.0重量%の濃度を有する、請求項11に記載の組成物。
- SCCO2と、メタノールと、フッ化アンモニウムと、フッ素化界面活性剤と、ホウ酸とを含む粒子状汚染物質の洗浄組成物であって、前記洗浄組成物の総重量に基づいて、前記メタノールは、約5〜約20重量%の濃度で存在し、前記フッ化物は、約0.01〜約2.0重量%の濃度で存在し、前記ホウ酸は、約0.01〜約2.0重量%の濃度で存在する、洗浄組成物。
- その上に粒子状汚染物質を有する基板から前記粒子状汚染物質を除去する方法であって、前記基板から前記粒子状汚染物質を除去するのに十分な時間かつ十分な接触条件下で、前記粒子状汚染物質を、SCCO2と、アルコールと、フッ素源と、場合によりヒドロキシル添加剤とを含む洗浄組成物に接触させることを含む、方法。
- 前記接触条件は、高圧力を含む、請求項14に記載の方法。
- 前記高圧力は、約1000から約7500psiの範囲内の圧力を含む、請求項15に記載の方法。
- 前記接触時間は、約5〜約30分の範囲内にある、請求項14に記載の方法。
- 前記フッ素源は、フッ化水素(HF)と、化学式、NR3(HF)3の三フッ化水素アミン化合物(各Rは、それぞれ独立に、水素および低級アルキルから選択される)と、フッ化水素−ピリジン(pyr−HF)と、化学式、R4NFのフッ化アンモニウム(式中、各Rは、それぞれ独立に、水素および低級アルキルから選択される)と、からなる群から選択されるフッ素含有化合物を含む、請求項14に記載の方法。
- 前記フッ素源は、フッ化アンモニウム(NH4F)を含む、請求項14に記載の方法。
- 前記組成物は、SCCO2と、メタノールと、フッ化アンモニウムと、フッ素化界面活性剤と、ホウ酸とを含み、前記洗浄組成物の総重量に基づいて、前記メタノールは、約5〜約20重量%の濃度で存在し、前記フッ化物は、約0.01〜約2.0重量%の濃度で存在し、前記ホウ酸は、約0.01〜約2.0重量%の濃度で存在する、請求項14に記載の方法。
- 前記接触工程が、(i)前記洗浄組成物を前記ポストエッチ残留物に動的フロー接触させることと、(ii)前記洗浄組成物を前記ポストエッチ残留物に静的ソーク接触させることとを含む洗浄サイクルを含む、請求項14に記載の方法。
- 前記洗浄サイクルは、前記ポストエッチ残留物に関して、動的フロー接触(i)と、静的ソーク接触(ii)とを交互にかつ繰り返し実行する、請求項21に記載の方法。
- 前記洗浄サイクルは、(i)動的フロー接触と、(ii)静的ソーク接触を順番に実行し、前記順番を3回繰り返すことを含む、請求項22に記載の方法。
- 1回目の洗浄工程ではSCCO2/アルコール洗浄溶液、2回目の洗浄工程ではSCCO2により、前記基板を前記粒子状汚染物質が除去された領域において洗浄し、前記1回目の洗浄工程において残留し沈殿する添加剤を除去し、前記2回目の洗浄工程において残留し沈殿する添加剤、残留するアルコールの両方もしくはいずれか一方を除去するステップをさらに含む、請求項14に記載の方法。
- SCCO2と、アルコールと、フッ素源と、抗酸化剤と、を含むポストエッチ残留物の洗浄組成物。
- 前記抗酸化剤は、ホウ酸と、3−ヒドロキシ−2−ナフトエ酸と、2−フルオロフェノールとからなる群から選択される、請求項25に記載のポストエッチ残留物の洗浄組成物。
- 前記アルコールは、C1〜C4アルコールを含み、前記抗酸化剤は、ホウ酸を含む、請求項25に記載のポストエッチ残留物の洗浄組成物。
- 基板からポストエッチ残留物を除去するために前記基板を洗浄する方法であって、請求項27で請求されるように、前記基板をフォトレジスト洗浄組成物に接触させることを含む、方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/284,861 US6943139B2 (en) | 2002-10-31 | 2002-10-31 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
PCT/US2003/034332 WO2004042794A2 (en) | 2002-10-31 | 2003-10-29 | Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
Publications (2)
Publication Number | Publication Date |
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JP2006505139A true JP2006505139A (ja) | 2006-02-09 |
JP2006505139A5 JP2006505139A5 (ja) | 2006-12-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004550192A Pending JP2006505139A (ja) | 2002-10-31 | 2003-10-29 | 超臨界二酸化炭素/化学調合物を用いたパターン化されたシリコン/二酸化ケイ素上における粒子状汚染物質の除去 |
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Country | Link |
---|---|
US (1) | US6943139B2 (ja) |
EP (1) | EP1559132A4 (ja) |
JP (1) | JP2006505139A (ja) |
KR (1) | KR20050075758A (ja) |
CN (2) | CN100346887C (ja) |
AU (1) | AU2003288966A1 (ja) |
TW (1) | TW200408699A (ja) |
WO (1) | WO2004042794A2 (ja) |
Cited By (1)
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US8084367B2 (en) | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
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JP3978023B2 (ja) * | 2001-12-03 | 2007-09-19 | 株式会社神戸製鋼所 | 高圧処理方法 |
US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
JP2007513522A (ja) * | 2003-12-01 | 2007-05-24 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | 超臨界流体/化学調合物を用いたmems犠牲層の除去 |
US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
US7195676B2 (en) * | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
US20060081273A1 (en) * | 2004-10-20 | 2006-04-20 | Mcdermott Wayne T | Dense fluid compositions and processes using same for article treatment and residue removal |
KR20070120609A (ko) * | 2005-04-15 | 2007-12-24 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 마이크로전자 소자로부터 이온 주입 포토레지스트층을세정하기 위한 배합물 |
WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
JP2011507685A (ja) | 2007-12-20 | 2011-03-10 | レイブ・エヌ・ピー・インコーポレーテッド | ノズル用の流体噴射組立体 |
CN101740341B (zh) * | 2008-11-26 | 2011-12-07 | 中国科学院微电子研究所 | 二氧化碳低温气溶胶半导体清洗设备 |
TWI502065B (zh) | 2010-10-13 | 2015-10-01 | Entegris Inc | 抑制氮化鈦腐蝕之組成物及方法 |
US8883565B2 (en) * | 2011-10-04 | 2014-11-11 | Infineon Technologies Ag | Separation of semiconductor devices from a wafer carrier |
US9352355B1 (en) * | 2012-04-15 | 2016-05-31 | David P. Jackson | Particle-plasma ablation process |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
KR102294726B1 (ko) | 2013-03-04 | 2021-08-30 | 엔테그리스, 아이엔씨. | 티타늄 나이트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 |
EP3004287B1 (en) | 2013-06-06 | 2021-08-18 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
TWI683889B (zh) | 2013-07-31 | 2020-02-01 | 美商恩特葛瑞斯股份有限公司 | 用於移除金屬硬遮罩及蝕刻後殘餘物之具有Cu/W相容性的水性配方 |
SG11201601158VA (en) | 2013-08-30 | 2016-03-30 | Advanced Tech Materials | Compositions and methods for selectively etching titanium nitride |
TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge選擇性蝕刻配方及其使用方法 |
WO2015095726A1 (en) | 2013-12-20 | 2015-06-25 | Entegris, Inc. | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
KR102290209B1 (ko) | 2013-12-31 | 2021-08-20 | 엔테그리스, 아이엔씨. | 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물 |
WO2015116818A1 (en) | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
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KR0137841B1 (ko) * | 1994-06-07 | 1998-04-27 | 문정환 | 식각잔류물 제거방법 |
US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
KR19980018262A (ko) * | 1996-08-01 | 1998-06-05 | 윌리엄 비.켐플러 | 입출력포트 및 램 메모리 어드레스 지정기술 |
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US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
US6148645A (en) * | 1999-05-14 | 2000-11-21 | Micell Technologies, Inc. | Detergent injection systems for carbon dioxide cleaning apparatus |
TW544797B (en) * | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
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2002
- 2002-10-31 US US10/284,861 patent/US6943139B2/en not_active Expired - Fee Related
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2003
- 2003-10-13 TW TW092128267A patent/TW200408699A/zh unknown
- 2003-10-29 CN CNB2003801021202A patent/CN100346887C/zh not_active Expired - Fee Related
- 2003-10-29 WO PCT/US2003/034332 patent/WO2004042794A2/en active Application Filing
- 2003-10-29 CN CNA2007101547063A patent/CN101215493A/zh active Pending
- 2003-10-29 AU AU2003288966A patent/AU2003288966A1/en not_active Abandoned
- 2003-10-29 EP EP03781458A patent/EP1559132A4/en not_active Withdrawn
- 2003-10-29 KR KR1020057007090A patent/KR20050075758A/ko not_active Application Discontinuation
- 2003-10-29 JP JP2004550192A patent/JP2006505139A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8084367B2 (en) | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
Also Published As
Publication number | Publication date |
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WO2004042794A2 (en) | 2004-05-21 |
CN101215493A (zh) | 2008-07-09 |
AU2003288966A8 (en) | 2004-06-07 |
TW200408699A (en) | 2004-06-01 |
KR20050075758A (ko) | 2005-07-21 |
AU2003288966A1 (en) | 2004-06-07 |
EP1559132A2 (en) | 2005-08-03 |
CN1708364A (zh) | 2005-12-14 |
WO2004042794A3 (en) | 2004-07-15 |
US6943139B2 (en) | 2005-09-13 |
CN100346887C (zh) | 2007-11-07 |
US20040087456A1 (en) | 2004-05-06 |
EP1559132A4 (en) | 2007-04-11 |
WO2004042794B1 (en) | 2004-09-23 |
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