WO2004042794A3 - Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations - Google Patents
Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations Download PDFInfo
- Publication number
- WO2004042794A3 WO2004042794A3 PCT/US2003/034332 US0334332W WO2004042794A3 WO 2004042794 A3 WO2004042794 A3 WO 2004042794A3 US 0334332 W US0334332 W US 0334332W WO 2004042794 A3 WO2004042794 A3 WO 2004042794A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- cleaning
- substrates
- scco2
- slilicon
- patterned
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 4
- 238000011109 contamination Methods 0.000 title abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 2
- 239000000377 silicon dioxide Substances 0.000 title abstract 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title 2
- 229910002092 carbon dioxide Inorganic materials 0.000 title 1
- 239000001569 carbon dioxide Substances 0.000 title 1
- 238000009472 formulation Methods 0.000 title 1
- 239000002245 particle Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
- 238000004140 cleaning Methods 0.000 abstract 8
- 239000000758 substrate Substances 0.000 abstract 5
- 239000004065 semiconductor Substances 0.000 abstract 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract 1
- 150000002894 organic compounds Chemical class 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C11D2111/22—
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03781458A EP1559132A4 (en) | 2002-10-31 | 2003-10-29 | Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
JP2004550192A JP2006505139A (en) | 2002-10-31 | 2003-10-29 | Removal of particulate contaminants on patterned silicon / silicon dioxide using supercritical carbon dioxide / chemical formulations |
AU2003288966A AU2003288966A1 (en) | 2002-10-31 | 2003-10-29 | Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/284,861 | 2002-10-31 | ||
US10/284,861 US6943139B2 (en) | 2002-10-31 | 2002-10-31 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004042794A2 WO2004042794A2 (en) | 2004-05-21 |
WO2004042794A3 true WO2004042794A3 (en) | 2004-07-15 |
WO2004042794B1 WO2004042794B1 (en) | 2004-09-23 |
Family
ID=32174999
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/034332 WO2004042794A2 (en) | 2002-10-31 | 2003-10-29 | Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations |
Country Status (8)
Country | Link |
---|---|
US (1) | US6943139B2 (en) |
EP (1) | EP1559132A4 (en) |
JP (1) | JP2006505139A (en) |
KR (1) | KR20050075758A (en) |
CN (2) | CN101215493A (en) |
AU (1) | AU2003288966A1 (en) |
TW (1) | TW200408699A (en) |
WO (1) | WO2004042794A2 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3978023B2 (en) * | 2001-12-03 | 2007-09-19 | 株式会社神戸製鋼所 | High pressure processing method |
US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
KR20060121168A (en) * | 2003-12-01 | 2006-11-28 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
US7195676B2 (en) * | 2004-07-13 | 2007-03-27 | Air Products And Chemicals, Inc. | Method for removal of flux and other residue in dense fluid systems |
US20060081273A1 (en) * | 2004-10-20 | 2006-04-20 | Mcdermott Wayne T | Dense fluid compositions and processes using same for article treatment and residue removal |
JP2008537343A (en) * | 2005-04-15 | 2008-09-11 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
US8084367B2 (en) * | 2006-05-24 | 2011-12-27 | Samsung Electronics Co., Ltd | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods |
US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
US8568018B2 (en) | 2007-12-20 | 2013-10-29 | Rave N.P., Inc. | Fluid injection assembly for nozzles |
CN101740341B (en) * | 2008-11-26 | 2011-12-07 | 中国科学院微电子研究所 | Carbon dioxide low temperature aerosol semiconductor cleaning device |
WO2012051380A2 (en) | 2010-10-13 | 2012-04-19 | Advanced Technology Materials, Inc. | Composition for and method of suppressing titanium nitride corrosion |
US8883565B2 (en) * | 2011-10-04 | 2014-11-11 | Infineon Technologies Ag | Separation of semiconductor devices from a wafer carrier |
US9387511B1 (en) * | 2012-04-15 | 2016-07-12 | Cleanlogix Llc | Particle-plasma ablation process for polymeric ophthalmic substrate surface |
WO2014089196A1 (en) | 2012-12-05 | 2014-06-12 | Advanced Technology Materials, Inc. | Compositions for cleaning iii-v semiconductor materials and methods of using same |
SG10201706443QA (en) | 2013-03-04 | 2017-09-28 | Entegris Inc | Compositions and methods for selectively etching titanium nitride |
KR102338550B1 (en) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | Compositions and methods for selectively etching titanium nitride |
KR102338526B1 (en) | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY |
KR102340516B1 (en) | 2013-08-30 | 2021-12-21 | 엔테그리스, 아이엔씨. | Compositions and methods for selectively etching titanium nitride |
US10340150B2 (en) | 2013-12-16 | 2019-07-02 | Entegris, Inc. | Ni:NiGe:Ge selective etch formulations and method of using same |
WO2015095726A1 (en) | 2013-12-20 | 2015-06-25 | Entegris, Inc. | Use of non-oxidizing strong acids for the removal of ion-implanted resist |
KR102290209B1 (en) | 2013-12-31 | 2021-08-20 | 엔테그리스, 아이엔씨. | Formulations to selectively etch silicon and germanium |
WO2015116818A1 (en) | 2014-01-29 | 2015-08-06 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
Family Cites Families (11)
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---|---|---|---|---|
US5306350A (en) * | 1990-12-21 | 1994-04-26 | Union Carbide Chemicals & Plastics Technology Corporation | Methods for cleaning apparatus using compressed fluids |
KR0137841B1 (en) * | 1994-06-07 | 1998-04-27 | 문정환 | Method for removing a etching waste material |
US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
US5868862A (en) * | 1996-08-01 | 1999-02-09 | Texas Instruments Incorporated | Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
US6148645A (en) * | 1999-05-14 | 2000-11-21 | Micell Technologies, Inc. | Detergent injection systems for carbon dioxide cleaning apparatus |
TW544797B (en) * | 2001-04-17 | 2003-08-01 | Kobe Steel Ltd | High-pressure processing apparatus |
US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
-
2002
- 2002-10-31 US US10/284,861 patent/US6943139B2/en not_active Expired - Fee Related
-
2003
- 2003-10-13 TW TW092128267A patent/TW200408699A/en unknown
- 2003-10-29 KR KR1020057007090A patent/KR20050075758A/en not_active Application Discontinuation
- 2003-10-29 CN CNA2007101547063A patent/CN101215493A/en active Pending
- 2003-10-29 CN CNB2003801021202A patent/CN100346887C/en not_active Expired - Fee Related
- 2003-10-29 JP JP2004550192A patent/JP2006505139A/en active Pending
- 2003-10-29 EP EP03781458A patent/EP1559132A4/en not_active Withdrawn
- 2003-10-29 AU AU2003288966A patent/AU2003288966A1/en not_active Abandoned
- 2003-10-29 WO PCT/US2003/034332 patent/WO2004042794A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
Also Published As
Publication number | Publication date |
---|---|
WO2004042794A2 (en) | 2004-05-21 |
JP2006505139A (en) | 2006-02-09 |
US6943139B2 (en) | 2005-09-13 |
US20040087456A1 (en) | 2004-05-06 |
AU2003288966A8 (en) | 2004-06-07 |
CN1708364A (en) | 2005-12-14 |
AU2003288966A1 (en) | 2004-06-07 |
WO2004042794B1 (en) | 2004-09-23 |
KR20050075758A (en) | 2005-07-21 |
CN100346887C (en) | 2007-11-07 |
EP1559132A4 (en) | 2007-04-11 |
EP1559132A2 (en) | 2005-08-03 |
TW200408699A (en) | 2004-06-01 |
CN101215493A (en) | 2008-07-09 |
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