WO2004042794A3 - Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations - Google Patents

Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations Download PDF

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Publication number
WO2004042794A3
WO2004042794A3 PCT/US2003/034332 US0334332W WO2004042794A3 WO 2004042794 A3 WO2004042794 A3 WO 2004042794A3 US 0334332 W US0334332 W US 0334332W WO 2004042794 A3 WO2004042794 A3 WO 2004042794A3
Authority
WO
WIPO (PCT)
Prior art keywords
cleaning
substrates
scco2
slilicon
patterned
Prior art date
Application number
PCT/US2003/034332
Other languages
French (fr)
Other versions
WO2004042794A2 (en
WO2004042794B1 (en
Inventor
Michael B Korzenski
Eliodor G Ghenciu
Chongying Xu
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Priority to EP03781458A priority Critical patent/EP1559132A4/en
Priority to JP2004550192A priority patent/JP2006505139A/en
Priority to AU2003288966A priority patent/AU2003288966A1/en
Publication of WO2004042794A2 publication Critical patent/WO2004042794A2/en
Publication of WO2004042794A3 publication Critical patent/WO2004042794A3/en
Publication of WO2004042794B1 publication Critical patent/WO2004042794B1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/10Salts
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3281Heterocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • C11D7/5022Organic solvents containing oxygen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
    • C11D2111/22

Abstract

A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in particulate contamination on wafer substrates and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having particulate contamination on Si/SiO2 substrates.
PCT/US2003/034332 2002-10-31 2003-10-29 Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations WO2004042794A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03781458A EP1559132A4 (en) 2002-10-31 2003-10-29 Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
JP2004550192A JP2006505139A (en) 2002-10-31 2003-10-29 Removal of particulate contaminants on patterned silicon / silicon dioxide using supercritical carbon dioxide / chemical formulations
AU2003288966A AU2003288966A1 (en) 2002-10-31 2003-10-29 Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/284,861 2002-10-31
US10/284,861 US6943139B2 (en) 2002-10-31 2002-10-31 Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations

Publications (3)

Publication Number Publication Date
WO2004042794A2 WO2004042794A2 (en) 2004-05-21
WO2004042794A3 true WO2004042794A3 (en) 2004-07-15
WO2004042794B1 WO2004042794B1 (en) 2004-09-23

Family

ID=32174999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/034332 WO2004042794A2 (en) 2002-10-31 2003-10-29 Removal of particle contamination on patterned slilicon/silicon dioxide using supercritical carbon dioxide/chemical formulations

Country Status (8)

Country Link
US (1) US6943139B2 (en)
EP (1) EP1559132A4 (en)
JP (1) JP2006505139A (en)
KR (1) KR20050075758A (en)
CN (2) CN101215493A (en)
AU (1) AU2003288966A1 (en)
TW (1) TW200408699A (en)
WO (1) WO2004042794A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3978023B2 (en) * 2001-12-03 2007-09-19 株式会社神戸製鋼所 High pressure processing method
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
KR20060121168A (en) * 2003-12-01 2006-11-28 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Removal of mems sacrificial layers using supercritical fluid/chemical formulations
US7553803B2 (en) * 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US7195676B2 (en) * 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US20060081273A1 (en) * 2004-10-20 2006-04-20 Mcdermott Wayne T Dense fluid compositions and processes using same for article treatment and residue removal
JP2008537343A (en) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US20090301996A1 (en) * 2005-11-08 2009-12-10 Advanced Technology Materials, Inc. Formulations for removing cooper-containing post-etch residue from microelectronic devices
US8084367B2 (en) * 2006-05-24 2011-12-27 Samsung Electronics Co., Ltd Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US8568018B2 (en) 2007-12-20 2013-10-29 Rave N.P., Inc. Fluid injection assembly for nozzles
CN101740341B (en) * 2008-11-26 2011-12-07 中国科学院微电子研究所 Carbon dioxide low temperature aerosol semiconductor cleaning device
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
US8883565B2 (en) * 2011-10-04 2014-11-11 Infineon Technologies Ag Separation of semiconductor devices from a wafer carrier
US9387511B1 (en) * 2012-04-15 2016-07-12 Cleanlogix Llc Particle-plasma ablation process for polymeric ophthalmic substrate surface
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
SG10201706443QA (en) 2013-03-04 2017-09-28 Entegris Inc Compositions and methods for selectively etching titanium nitride
KR102338550B1 (en) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. Compositions and methods for selectively etching titanium nitride
KR102338526B1 (en) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. AQUEOUS FORMULATIONS FOR REMOVING METAL HARD MASK AND POST-ETCH RESIDUE WITH Cu/W COMPATIBILITY
KR102340516B1 (en) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. Compositions and methods for selectively etching titanium nitride
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
WO2015095726A1 (en) 2013-12-20 2015-06-25 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
KR102290209B1 (en) 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. Formulations to selectively etch silicon and germanium
WO2015116818A1 (en) 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5306350A (en) * 1990-12-21 1994-04-26 Union Carbide Chemicals & Plastics Technology Corporation Methods for cleaning apparatus using compressed fluids
KR0137841B1 (en) * 1994-06-07 1998-04-27 문정환 Method for removing a etching waste material
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US5868862A (en) * 1996-08-01 1999-02-09 Texas Instruments Incorporated Method of removing inorganic contamination by chemical alteration and extraction in a supercritical fluid media
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6148645A (en) * 1999-05-14 2000-11-21 Micell Technologies, Inc. Detergent injection systems for carbon dioxide cleaning apparatus
TW544797B (en) * 2001-04-17 2003-08-01 Kobe Steel Ltd High-pressure processing apparatus
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide

Also Published As

Publication number Publication date
WO2004042794A2 (en) 2004-05-21
JP2006505139A (en) 2006-02-09
US6943139B2 (en) 2005-09-13
US20040087456A1 (en) 2004-05-06
AU2003288966A8 (en) 2004-06-07
CN1708364A (en) 2005-12-14
AU2003288966A1 (en) 2004-06-07
WO2004042794B1 (en) 2004-09-23
KR20050075758A (en) 2005-07-21
CN100346887C (en) 2007-11-07
EP1559132A4 (en) 2007-04-11
EP1559132A2 (en) 2005-08-03
TW200408699A (en) 2004-06-01
CN101215493A (en) 2008-07-09

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