JP4784012B2 - 窒化物半導体基板、及びその製造方法 - Google Patents

窒化物半導体基板、及びその製造方法 Download PDF

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Publication number
JP4784012B2
JP4784012B2 JP2001228429A JP2001228429A JP4784012B2 JP 4784012 B2 JP4784012 B2 JP 4784012B2 JP 2001228429 A JP2001228429 A JP 2001228429A JP 2001228429 A JP2001228429 A JP 2001228429A JP 4784012 B2 JP4784012 B2 JP 4784012B2
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nitride semiconductor
substrate
layer
semiconductor layer
region
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JP2003045807A (ja
JP2003045807A5 (enExample
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准也 成田
真吾 枡井
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Nichia Corp
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Nichia Corp
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  • Semiconductor Lasers (AREA)
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  • Recrystallisation Techniques (AREA)
JP2001228429A 2001-07-27 2001-07-27 窒化物半導体基板、及びその製造方法 Expired - Fee Related JP4784012B2 (ja)

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JP2003045807A5 JP2003045807A5 (enExample) 2008-09-04
JP4784012B2 true JP4784012B2 (ja) 2011-09-28

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4883931B2 (ja) * 2005-04-26 2012-02-22 京セラ株式会社 半導体積層基板の製造方法
JP5136437B2 (ja) * 2009-01-23 2013-02-06 住友電気工業株式会社 窒化物系半導体光素子を作製する方法
JP2011114160A (ja) * 2009-11-26 2011-06-09 Sumitomo Chemical Co Ltd 半導体基板、電子デバイスおよび半導体基板の製造方法
JP5667360B2 (ja) * 2009-12-21 2015-02-12 住友化学株式会社 半導体基板、電子デバイスおよび半導体基板の製造方法
JP2014072428A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体結晶基板の製造方法、半導体装置の製造方法、半導体結晶基板及び半導体装置
JP5685617B2 (ja) * 2013-03-29 2015-03-18 ▲さん▼圓光電股▲ふん▼有限公司 発光ダイオード装置の製造方法
JP2015065465A (ja) * 2014-12-04 2015-04-09 ▲さん▼圓光電股▲ふん▼有限公司 発光ダイオード装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0754806B2 (ja) * 1987-01-20 1995-06-07 日本電信電話株式会社 化合物半導体単結晶膜の成長方法
JP2704931B2 (ja) * 1993-11-19 1998-01-26 光技術研究開発株式会社 選択成長用マスクの形成方法及びその除去方法
JP4301592B2 (ja) * 1998-01-16 2009-07-22 三菱マテリアル株式会社 窒化物半導体層付き基板の製造方法
JP3791246B2 (ja) * 1999-06-15 2006-06-28 日亜化学工業株式会社 窒化物半導体の成長方法、及びそれを用いた窒化物半導体素子の製造方法、窒化物半導体レーザ素子の製造方法
JP2001148544A (ja) * 1999-09-10 2001-05-29 Sharp Corp 半導体発光素子
JP3427047B2 (ja) * 1999-09-24 2003-07-14 三洋電機株式会社 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法
AU8009500A (en) * 1999-10-14 2001-04-23 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of group iii-nitride layers
JP2001144014A (ja) * 1999-11-17 2001-05-25 Ngk Insulators Ltd エピタキシャル成長用基板およびその製造方法

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