JP4768470B2 - 半導体製造工程から発生する排ガスの処理装置及び方法 - Google Patents
半導体製造工程から発生する排ガスの処理装置及び方法 Download PDFInfo
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- 239000003054 catalyst Substances 0.000 claims description 160
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- 238000001179 sorption measurement Methods 0.000 claims description 105
- 150000001875 compounds Chemical class 0.000 claims description 67
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 59
- 238000004140 cleaning Methods 0.000 claims description 45
- 238000000354 decomposition reaction Methods 0.000 claims description 36
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 24
- 239000000126 substance Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 15
- 239000001569 carbon dioxide Substances 0.000 claims description 12
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 12
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
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- 238000006555 catalytic reaction Methods 0.000 description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 17
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052733 gallium Inorganic materials 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 230000002378 acidificating effect Effects 0.000 description 9
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 8
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 7
- 229910052744 lithium Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000011591 potassium Substances 0.000 description 7
- 229910052700 potassium Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000009841 combustion method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000008188 pellet Substances 0.000 description 5
- 241000264877 Hippospongia communis Species 0.000 description 4
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 229910001593 boehmite Inorganic materials 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 4
- 239000003949 liquefied natural gas Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
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- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
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- 229940044658 gallium nitrate Drugs 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
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- 238000005338 heat storage Methods 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000002912 waste gas Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- 239000005696 Diammonium phosphate Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004018 SiF Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 229910000388 diammonium phosphate Inorganic materials 0.000 description 1
- 235000019838 diammonium phosphate Nutrition 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
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- 229910001385 heavy metal Inorganic materials 0.000 description 1
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- INHCSSUBVCNVSK-UHFFFAOYSA-L lithium sulfate Inorganic materials [Li+].[Li+].[O-]S([O-])(=O)=O INHCSSUBVCNVSK-UHFFFAOYSA-L 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
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- 239000003595 mist Substances 0.000 description 1
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- 230000003472 neutralizing effect Effects 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- RBTVSNLYYIMMKS-UHFFFAOYSA-N tert-butyl 3-aminoazetidine-1-carboxylate;hydrochloride Chemical compound Cl.CC(C)(C)OC(=O)N1CC(N)C1 RBTVSNLYYIMMKS-UHFFFAOYSA-N 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
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- 239000002351 wastewater Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/86—Catalytic processes
- B01D53/8659—Removing halogens or halogen compounds
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B01D2258/00—Sources of waste gases
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- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
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Description
触媒の製造
脱イオン交換水20mLに硝酸ガリウム溶液(Ga(NO3)3)[MCP製、英国]22mL及び硝酸ナトリウム(NaNO3)[Sigma−Aldrich製、米国]3.5gを添加して含浸溶液を作った後、これをアルミナ[Sasol、米国]にガリウム及びナトリウムがそれぞれアルミナ重量に対し40重量%及び1重量%で含浸されるようにした後、24時間常温で乾燥させて触媒を製造した。
実施例1と同様にして行うが、焼成した触媒を硫酸水溶液に含浸することを省略することにより、硫酸処理をしていない触媒を製造した。
実施例1と同様にして行うが、硝酸ガリウム溶液22mLの代わりに硝酸ニッケル(Ni(NO3)26H2O)[Sigma−Aldrich製、米国]65gを用いて触媒を製造した。
脱イオン交換水15mLにリン酸二アンモニウム((NH3)2HPO4)[Sigma−Aldrich製、米国]0.3gを溶解させた後、これをアルミナ[Sasol製、米国]20gにアルミナ全体重量に対し20重量%でリンが含浸されるようにして24時間常温で乾燥させた。
図1に示すように、多孔性フィルター[Zebent Filter、KOCAT製、韓国]を設置した後、前記多孔性フィルターの上端にCa(OH)2[矢橋マインパルク製、日本]粉末をペレット状に成形した吸着剤を8cm3充填して設置した後、前記多孔性フィルターと吸着剤の外周面に加熱ヒーターを設置して吸着反応部を構成した。
実施例2と同様にして行うが、実施例1によって製造された触媒の代わりに、比較実施例2によって製造された触媒を使用し、排ガスとして過フッ化化合物CF4のみを酸素と混合して実施した。
実施例2と同様にして行うが、実施例1によって製造された触媒の代わりに、比較実施例3によって製造された触媒を使用し、排ガスとして過フッ化化合物CF4のみを酸素と混合して実施した。
実施例2と同様にして行うが、実施例1によって製造された触媒の代わりに、比較実施例3によって製造された触媒を使用し、排ガスとして過フッ化化合物CF4のみを酸素と混合して実施した。
実施例2と同様にして行うが、排ガスまたは排ガス及び空気を吸着反応部及び分解反応部を通過させず、直接触媒反応部に供給して処理した。
4 吸着反応部
6 触媒反応部
8 分解反応部
10 加熱手段
12 フィルター部材
14 吸着層
16 分解反応部材
18 触媒層
20 湿式洗浄器
22 トラップ
24 排出口
26 水注入口
28 第1熱交換機
28’ 第2熱交換機
30 洗浄部
32 空気注入口
Claims (8)
- 排ガス及び空気を吸着層の備えられた吸着反応部を通過させ、排ガスに含まれた過フッ化化合物を処理する吸着処理段階と、
前記吸着処理段階済みの排ガスを、分解反応部に通過させ、触媒処理段階で固体状粒子に転換されることができる物質を粒子状に転換させて除去する分解処理段階と、
前記分解処理段階済みの排ガスに水を注入した後、触媒層に通過させ、排ガスに存在する未処理の過フッ化化合物を触媒処理する触媒処理段階とを含み、
前記分解処理段階は300〜550℃で行われることを特徴とする、半導体製造工程から発生する排ガスの処理方法。 - 前記吸着反応部を通過する空気を流入される排ガスと混合させる代わりに、触媒処理段階の前に注入することを特徴とする、請求項1に記載の排ガスの処理方法。
- 前記排ガスは、BCl 3 、Cl 2 、F 2 、HBr、HCl、HF、CF 4 、CHF 3 、C 2 F 6 、C 3 F 8 、C 4 F 6 、C 4 F 8 、C 5 F 8 NF 3 、SF 6 、NF 3 、AsH 3 、NH 3 、PH 3 、SiH 4 、Si 2 H 2 Cl 2 またはこれらの混合物からなることを特徴とする、請求項1に記載の排ガスの処理方法。
- 前記触媒処理段階の後工程として、処理された排ガス中に存在する二酸化炭素、フッ素、HFまたは水を洗浄する洗浄段階をさらに含むことを特徴とする、請求項1に記載の排ガスの処理方法。
- 前記洗浄段階が湿式洗浄であることを特徴とする、請求項4に記載の排ガスの処理方法。
- 前記湿式洗浄の後工程として、前記湿式洗浄によって処理された排ガス中に含まれた微量のHF及び使用された水を除去する段階をさらに含むことを特徴とする、請求項5に記載の排ガスの処理方法。
- 前記吸着処理段階から排出されるガス、及び前記触媒処理段階から排出されるガスの移動経路に熱交換機を設置して熱を回収する段階をさらに含むことを特徴とする、請求項1に記載の排ガスの処理方法。
- 前記吸着処理段階は常温または250〜500℃で、前記触媒処理段階は400〜800℃で行われることを特徴とする、請求項1に記載の排ガスの処理方法。
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