JP4761646B2 - 不揮発性メモリ - Google Patents

不揮発性メモリ Download PDF

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Publication number
JP4761646B2
JP4761646B2 JP2001127184A JP2001127184A JP4761646B2 JP 4761646 B2 JP4761646 B2 JP 4761646B2 JP 2001127184 A JP2001127184 A JP 2001127184A JP 2001127184 A JP2001127184 A JP 2001127184A JP 4761646 B2 JP4761646 B2 JP 4761646B2
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JP
Japan
Prior art keywords
memory
memory transistor
transistor
source
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001127184A
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English (en)
Japanese (ja)
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JP2002043447A5 (es
JP2002043447A (ja
Inventor
清 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001127184A priority Critical patent/JP4761646B2/ja
Publication of JP2002043447A publication Critical patent/JP2002043447A/ja
Publication of JP2002043447A5 publication Critical patent/JP2002043447A5/ja
Application granted granted Critical
Publication of JP4761646B2 publication Critical patent/JP4761646B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Control Of El Displays (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
JP2001127184A 2000-04-27 2001-04-25 不揮発性メモリ Expired - Fee Related JP4761646B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001127184A JP4761646B2 (ja) 2000-04-27 2001-04-25 不揮発性メモリ

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-126773 2000-04-27
JP2000126773 2000-04-27
JP2000126773 2000-04-27
JP2001127184A JP4761646B2 (ja) 2000-04-27 2001-04-25 不揮発性メモリ

Publications (3)

Publication Number Publication Date
JP2002043447A JP2002043447A (ja) 2002-02-08
JP2002043447A5 JP2002043447A5 (es) 2007-03-15
JP4761646B2 true JP4761646B2 (ja) 2011-08-31

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Family Applications (1)

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JP2001127184A Expired - Fee Related JP4761646B2 (ja) 2000-04-27 2001-04-25 不揮発性メモリ

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JP (1) JP4761646B2 (es)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI429028B (zh) 2006-03-31 2014-03-01 Semiconductor Energy Lab 非揮發性半導體記憶體裝置及其製造方法
JP5094179B2 (ja) * 2006-03-31 2012-12-12 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
US7596024B2 (en) 2006-07-14 2009-09-29 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory
KR100851546B1 (ko) * 2006-09-22 2008-08-11 삼성전자주식회사 비휘발성 기억 장치 및 그 동작 방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
JP4521433B2 (ja) * 2007-09-18 2010-08-11 シャープ株式会社 半導体素子及びこの半導体素子を用いた装置
JP4521434B2 (ja) * 2007-09-18 2010-08-11 シャープ株式会社 半導体素子及びこの半導体素子を用いた装置
JP5118946B2 (ja) * 2007-11-20 2013-01-16 シャープ株式会社 半導体装置およびその製造方法と、書込み駆動方法および消去駆動方法ならびに液晶表示装置
KR102395345B1 (ko) * 2010-01-20 2022-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
WO2012004920A1 (ja) * 2010-07-05 2012-01-12 シャープ株式会社 薄膜トランジスタメモリ及びそれを備えた表示装置
KR20120017206A (ko) 2010-08-18 2012-02-28 삼성전자주식회사 비휘발성 메모리 셀 어레이, 메모리 장치 및 메모리 시스템
JP5482712B2 (ja) * 2011-04-08 2014-05-07 ブラザー工業株式会社 画像表示装置
JP5482711B2 (ja) * 2011-04-08 2014-05-07 ブラザー工業株式会社 画像表示装置
US9847109B2 (en) * 2015-12-21 2017-12-19 Imec Vzw Memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09507341A (ja) * 1991-08-29 1997-07-22 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 自己整列デュアルビット分割ゲートフラッシュｅｅｐｒｏｍセル
JP2000031296A (ja) * 1998-06-30 2000-01-28 Motorola Inc Ｃｍｏｓ半導体素子およびその形成方法
JP2000068482A (ja) * 1998-08-18 2000-03-03 Toshiba Corp 不揮発性半導体メモリ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09507341A (ja) * 1991-08-29 1997-07-22 ヒュンダイ エレクトロニクス インダストリーズ カムパニー リミテッド 自己整列デュアルビット分割ゲートフラッシュｅｅｐｒｏｍセル
JP2000031296A (ja) * 1998-06-30 2000-01-28 Motorola Inc Ｃｍｏｓ半導体素子およびその形成方法
JP2000068482A (ja) * 1998-08-18 2000-03-03 Toshiba Corp 不揮発性半導体メモリ

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JP2002043447A (ja) 2002-02-08

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