JP4752473B2 - 露光装置、露光方法及びデバイス製造方法 - Google Patents

露光装置、露光方法及びデバイス製造方法 Download PDF

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Publication number
JP4752473B2
JP4752473B2 JP2005350685A JP2005350685A JP4752473B2 JP 4752473 B2 JP4752473 B2 JP 4752473B2 JP 2005350685 A JP2005350685 A JP 2005350685A JP 2005350685 A JP2005350685 A JP 2005350685A JP 4752473 B2 JP4752473 B2 JP 4752473B2
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JP
Japan
Prior art keywords
liquid
substrate
measurement
exposure
exposure apparatus
Prior art date
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Expired - Fee Related
Application number
JP2005350685A
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English (en)
Japanese (ja)
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JP2006190997A5 (enExample
JP2006190997A (ja
Inventor
佳己 木田
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Nikon Corp
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Nikon Corp
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Priority to JP2005350685A priority Critical patent/JP4752473B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to PCT/JP2005/022634 priority patent/WO2006062188A1/ja
Priority to KR1020077001616A priority patent/KR101281951B1/ko
Priority to US11/660,921 priority patent/US8035799B2/en
Priority to CN2005800355949A priority patent/CN101044593B/zh
Priority to EP05814747A priority patent/EP1821338A4/en
Publication of JP2006190997A publication Critical patent/JP2006190997A/ja
Publication of JP2006190997A5 publication Critical patent/JP2006190997A5/ja
Application granted granted Critical
Publication of JP4752473B2 publication Critical patent/JP4752473B2/ja
Priority to US13/137,692 priority patent/US8913224B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2005350685A 2004-12-09 2005-12-05 露光装置、露光方法及びデバイス製造方法 Expired - Fee Related JP4752473B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005350685A JP4752473B2 (ja) 2004-12-09 2005-12-05 露光装置、露光方法及びデバイス製造方法
KR1020077001616A KR101281951B1 (ko) 2004-12-09 2005-12-09 노광 장치, 노광 방법 및 디바이스 제조 방법
US11/660,921 US8035799B2 (en) 2004-12-09 2005-12-09 Exposure apparatus, exposure method, and device producing method
CN2005800355949A CN101044593B (zh) 2004-12-09 2005-12-09 曝光装置、曝光方法及组件制造方法
PCT/JP2005/022634 WO2006062188A1 (ja) 2004-12-09 2005-12-09 露光装置、露光方法及びデバイス製造方法
EP05814747A EP1821338A4 (en) 2004-12-09 2005-12-09 EXPOSURE DEVICE, EXPOSURE METHOD AND MANUFACTURING METHOD FOR THE DEVICE
US13/137,692 US8913224B2 (en) 2004-12-09 2011-09-02 Exposure apparatus, exposure method, and device producing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004356535 2004-12-09
JP2004356535 2004-12-09
JP2005350685A JP4752473B2 (ja) 2004-12-09 2005-12-05 露光装置、露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2006190997A JP2006190997A (ja) 2006-07-20
JP2006190997A5 JP2006190997A5 (enExample) 2009-01-22
JP4752473B2 true JP4752473B2 (ja) 2011-08-17

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JP2005350685A Expired - Fee Related JP4752473B2 (ja) 2004-12-09 2005-12-05 露光装置、露光方法及びデバイス製造方法

Country Status (6)

Country Link
US (2) US8035799B2 (enExample)
EP (1) EP1821338A4 (enExample)
JP (1) JP4752473B2 (enExample)
KR (1) KR101281951B1 (enExample)
CN (1) CN101044593B (enExample)
WO (1) WO2006062188A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161621B1 (en) 2003-04-11 2018-10-24 Nikon Corporation Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20080015778A (ko) * 2005-06-29 2008-02-20 가부시키가이샤 니콘 노광 장치, 기판 처리 방법, 및 디바이스 제조 방법
KR20080114691A (ko) * 2006-03-13 2008-12-31 가부시키가이샤 니콘 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
US7602471B2 (en) * 2006-05-17 2009-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for particle monitoring in immersion lithography
SG175671A1 (en) * 2006-05-18 2011-11-28 Nikon Corp Exposure method and apparatus, maintenance method and device manufacturing method
CN102109773A (zh) * 2006-05-22 2011-06-29 株式会社尼康 曝光方法、曝光装置以及维修方法
US8570484B2 (en) * 2006-08-30 2013-10-29 Nikon Corporation Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008135723A (ja) 2006-10-27 2008-06-12 Toshiba Corp 液浸露光装置および露光方法
US20080156356A1 (en) 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
KR100830586B1 (ko) * 2006-12-12 2008-05-21 삼성전자주식회사 기판을 노광하는 장치 및 방법
JP2008198820A (ja) * 2007-02-14 2008-08-28 Tokyo Electron Ltd 基板処理方法及び基板処理装置
US8435593B2 (en) * 2007-05-22 2013-05-07 Asml Netherlands B.V. Method of inspecting a substrate and method of preparing a substrate for lithography
JP2009071193A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光装置及びデバイスの製造方法
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP2009094254A (ja) * 2007-10-05 2009-04-30 Canon Inc 液浸露光装置およびデバイス製造方法
JP5453878B2 (ja) * 2009-03-31 2014-03-26 栗田工業株式会社 超純水製造設備及び超純水のモニタリング方法
US20120019804A1 (en) * 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
JP5437968B2 (ja) * 2010-10-14 2014-03-12 本田技研工業株式会社 水電解システム
JP6122252B2 (ja) * 2012-05-01 2017-04-26 キヤノン株式会社 露光装置及びデバイスの製造方法
JP6114151B2 (ja) * 2013-09-20 2017-04-12 株式会社Ｓｃｒｅｅｎホールディングス 描画装置、基板処理システムおよび描画方法
CN104035288A (zh) * 2014-06-05 2014-09-10 浙江大学 用于浸没式光刻机中的负压环境下的连续气液分离装置
JP6562707B2 (ja) * 2015-05-13 2019-08-21 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) * 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DE3340079A1 (de) * 1983-11-05 1985-05-15 Brown, Boveri & Cie Ag, 6800 Mannheim Speicherzellenverbindung
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2897355B2 (ja) * 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
US5309198A (en) * 1992-02-25 1994-05-03 Nikon Corporation Light exposure system
US5329336A (en) * 1992-07-06 1994-07-12 Nikon Corporation Exposure method and apparatus
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) * 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) * 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5696441A (en) * 1994-05-13 1997-12-09 Distribution Control Systems, Inc. Linear alternating current interface for electronic meters
JP3555230B2 (ja) * 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) * 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
CN1244018C (zh) * 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
DE69717975T2 (de) 1996-12-24 2003-05-28 Asml Netherlands B.V., Veldhoven In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) * 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
KR20010033118A (ko) 1997-12-18 2001-04-25 오노 시게오 스테이지 장치 및 노광장치
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001267239A (ja) * 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
US20020041377A1 (en) * 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
SG103303A1 (en) * 2000-07-07 2004-04-29 Nikon Corp Exposure apparatus, surface position adjustment unit, mask, and device manufacturing method
TW529172B (en) * 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
EP2495613B1 (en) * 2002-11-12 2013-07-31 ASML Netherlands B.V. Lithographic apparatus
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG121818A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4608876B2 (ja) * 2002-12-10 2011-01-12 株式会社ニコン 露光装置及びデバイス製造方法
US7948604B2 (en) * 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
EP1571701A4 (en) 2002-12-10 2008-04-09 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
EP1571697A4 (en) * 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD
JP4645027B2 (ja) 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
DE60326384D1 (de) 2002-12-13 2009-04-09 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
AU2003295177A1 (en) 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
JP2004281697A (ja) * 2003-03-14 2004-10-07 Canon Inc 露光装置及び収差補正方法
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2453465A3 (en) 2003-05-28 2018-01-03 Nikon Corporation Exposure method, exposure apparatus, and method for producing a device
JP2004356356A (ja) * 2003-05-29 2004-12-16 Oki Electric Ind Co Ltd 洗浄終了判定方法および洗浄装置
EP1482372B1 (en) * 2003-05-30 2014-10-08 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005005317A (ja) * 2003-06-09 2005-01-06 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの研磨方法およびその研磨装置
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI475596B (zh) 2003-08-29 2015-03-01 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
JP4305095B2 (ja) 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
GB2409362B (en) 2003-12-19 2006-07-19 Nokia Corp A GPS device
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
JP2005209705A (ja) * 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
WO2006029824A2 (en) * 2004-09-16 2006-03-23 Carl Zeiss Smt Ag Monitoring element for lithographic projection systems
CN101487981A (zh) * 2004-10-13 2009-07-22 株式会社尼康 曝光装置、曝光方法及组件制造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法

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WO2006062188A1 (ja) 2006-06-15
KR20070088458A (ko) 2007-08-29
CN101044593A (zh) 2007-09-26
KR101281951B1 (ko) 2013-07-03
CN101044593B (zh) 2010-05-05
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US20120026475A1 (en) 2012-02-02
US8913224B2 (en) 2014-12-16

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