CN101044593B - 曝光装置、曝光方法及组件制造方法 - Google Patents
曝光装置、曝光方法及组件制造方法 Download PDFInfo
- Publication number
- CN101044593B CN101044593B CN2005800355949A CN200580035594A CN101044593B CN 101044593 B CN101044593 B CN 101044593B CN 2005800355949 A CN2005800355949 A CN 2005800355949A CN 200580035594 A CN200580035594 A CN 200580035594A CN 101044593 B CN101044593 B CN 101044593B
- Authority
- CN
- China
- Prior art keywords
- liquid
- exposure
- substrate
- measurement
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP356535/2004 | 2004-12-09 | ||
| JP2004356535 | 2004-12-09 | ||
| JP350685/2005 | 2005-12-05 | ||
| JP2005350685A JP4752473B2 (ja) | 2004-12-09 | 2005-12-05 | 露光装置、露光方法及びデバイス製造方法 |
| PCT/JP2005/022634 WO2006062188A1 (ja) | 2004-12-09 | 2005-12-09 | 露光装置、露光方法及びデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101044593A CN101044593A (zh) | 2007-09-26 |
| CN101044593B true CN101044593B (zh) | 2010-05-05 |
Family
ID=36578008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800355949A Expired - Fee Related CN101044593B (zh) | 2004-12-09 | 2005-12-09 | 曝光装置、曝光方法及组件制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8035799B2 (enExample) |
| EP (1) | EP1821338A4 (enExample) |
| JP (1) | JP4752473B2 (enExample) |
| KR (1) | KR101281951B1 (enExample) |
| CN (1) | CN101044593B (enExample) |
| WO (1) | WO2006062188A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2005122218A1 (ja) | 2004-06-09 | 2005-12-22 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| KR20080015778A (ko) * | 2005-06-29 | 2008-02-20 | 가부시키가이샤 니콘 | 노광 장치, 기판 처리 방법, 및 디바이스 제조 방법 |
| KR20080114691A (ko) * | 2006-03-13 | 2008-12-31 | 가부시키가이샤 니콘 | 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법 |
| US7602471B2 (en) * | 2006-05-17 | 2009-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for particle monitoring in immersion lithography |
| SG175671A1 (en) * | 2006-05-18 | 2011-11-28 | Nikon Corp | Exposure method and apparatus, maintenance method and device manufacturing method |
| CN102109773A (zh) * | 2006-05-22 | 2011-06-29 | 株式会社尼康 | 曝光方法、曝光装置以及维修方法 |
| US8570484B2 (en) * | 2006-08-30 | 2013-10-29 | Nikon Corporation | Immersion exposure apparatus, device manufacturing method, cleaning method, and cleaning member to remove foreign substance using liquid |
| US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2008135723A (ja) | 2006-10-27 | 2008-06-12 | Toshiba Corp | 液浸露光装置および露光方法 |
| US20080156356A1 (en) | 2006-12-05 | 2008-07-03 | Nikon Corporation | Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method |
| KR100830586B1 (ko) * | 2006-12-12 | 2008-05-21 | 삼성전자주식회사 | 기판을 노광하는 장치 및 방법 |
| JP2008198820A (ja) * | 2007-02-14 | 2008-08-28 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| US8435593B2 (en) * | 2007-05-22 | 2013-05-07 | Asml Netherlands B.V. | Method of inspecting a substrate and method of preparing a substrate for lithography |
| JP2009071193A (ja) * | 2007-09-14 | 2009-04-02 | Canon Inc | 露光装置及びデバイスの製造方法 |
| SG151198A1 (en) * | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| JP2009094254A (ja) * | 2007-10-05 | 2009-04-30 | Canon Inc | 液浸露光装置およびデバイス製造方法 |
| JP5453878B2 (ja) * | 2009-03-31 | 2014-03-26 | 栗田工業株式会社 | 超純水製造設備及び超純水のモニタリング方法 |
| US20120019804A1 (en) * | 2010-07-23 | 2012-01-26 | Nikon Corporation | Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium |
| JP5437968B2 (ja) * | 2010-10-14 | 2014-03-12 | 本田技研工業株式会社 | 水電解システム |
| JP6122252B2 (ja) * | 2012-05-01 | 2017-04-26 | キヤノン株式会社 | 露光装置及びデバイスの製造方法 |
| JP6114151B2 (ja) * | 2013-09-20 | 2017-04-12 | 株式会社Screenホールディングス | 描画装置、基板処理システムおよび描画方法 |
| CN104035288A (zh) * | 2014-06-05 | 2014-09-10 | 浙江大学 | 用于浸没式光刻机中的负压环境下的连续气液分离装置 |
| JP6562707B2 (ja) * | 2015-05-13 | 2019-08-21 | キヤノン株式会社 | インプリント装置、インプリント方法及び物品の製造方法 |
| JP6207671B1 (ja) * | 2016-06-01 | 2017-10-04 | キヤノン株式会社 | パターン形成装置、基板配置方法及び物品の製造方法 |
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| EP1524558A1 (en) | 2003-10-15 | 2005-04-20 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| GB2409362B (en) | 2003-12-19 | 2006-07-19 | Nokia Corp | A GPS device |
| JP4323946B2 (ja) | 2003-12-19 | 2009-09-02 | キヤノン株式会社 | 露光装置 |
| JP2005209705A (ja) * | 2004-01-20 | 2005-08-04 | Nikon Corp | 露光装置及びデバイス製造方法 |
| WO2005122218A1 (ja) * | 2004-06-09 | 2005-12-22 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| WO2006029824A2 (en) * | 2004-09-16 | 2006-03-23 | Carl Zeiss Smt Ag | Monitoring element for lithographic projection systems |
| CN101487981A (zh) * | 2004-10-13 | 2009-07-22 | 株式会社尼康 | 曝光装置、曝光方法及组件制造方法 |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
-
2005
- 2005-12-05 JP JP2005350685A patent/JP4752473B2/ja not_active Expired - Fee Related
- 2005-12-09 KR KR1020077001616A patent/KR101281951B1/ko not_active Expired - Fee Related
- 2005-12-09 US US11/660,921 patent/US8035799B2/en not_active Expired - Fee Related
- 2005-12-09 WO PCT/JP2005/022634 patent/WO2006062188A1/ja not_active Ceased
- 2005-12-09 EP EP05814747A patent/EP1821338A4/en not_active Withdrawn
- 2005-12-09 CN CN2005800355949A patent/CN101044593B/zh not_active Expired - Fee Related
-
2011
- 2011-09-02 US US13/137,692 patent/US8913224B2/en not_active Expired - Fee Related
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| US5309198A (en) * | 1992-02-25 | 1994-05-03 | Nikon Corporation | Light exposure system |
| US5329336A (en) * | 1992-07-06 | 1994-07-12 | Nikon Corporation | Exposure method and apparatus |
| CN1332470A (zh) * | 2000-07-07 | 2002-01-23 | 株式会社尼康 | 曝光装置、表面位置调节单元、掩模和器件制造方法 |
| CN1530753A (zh) * | 2003-03-14 | 2004-09-22 | ������������ʽ���� | 曝光装置和象差校正方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1821338A4 (en) | 2011-03-09 |
| US8035799B2 (en) | 2011-10-11 |
| US20070252960A1 (en) | 2007-11-01 |
| EP1821338A1 (en) | 2007-08-22 |
| WO2006062188A1 (ja) | 2006-06-15 |
| KR20070088458A (ko) | 2007-08-29 |
| CN101044593A (zh) | 2007-09-26 |
| KR101281951B1 (ko) | 2013-07-03 |
| JP2006190997A (ja) | 2006-07-20 |
| US20120026475A1 (en) | 2012-02-02 |
| US8913224B2 (en) | 2014-12-16 |
| JP4752473B2 (ja) | 2011-08-17 |
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